Forming variable depth structures with laser ablation

Patent metadata

Field	Value
Publication number	US-12099241-B2
Application number	US-202318305256-A
Country	US
Kind code	B2
Filing date	Apr 21, 2023
Priority date	Mar 13, 2020
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

First claim

What is claimed is:

1. A method of forming a device structure comprising:
forming a device material layer on a substrate;
forming a variable-depth structure in the device material layer:
forming a hardmask and a photoresist stack over the device material layer, wherein the photoresist stack comprises an optical planarization layer and a photoresist layer, wherein the photoresist layer is in direct contact with the optical planarization layer;
etching the photoresist stack;
etching the hardmask; and
forming a plurality of device structures in the device material layer by etching through the device material layer.

2. The method of claim 1 , wherein the variable-depth structure changes in depth from a first end to a second end.

3. The method of claim 2 , wherein the depth of the variable-depth structure changes linearly from the first end to the second end.

4. The method of claim 2 wherein the depth of the variable-depth structure changes non-linearly from the first end to the second end.

5. The method of claim 2 , wherein the depth of the variable-depth structure oscillates from the first end to the second end.

6. A method of forming a device structure comprising:
forming a device material layer on a substrate; forming a sacrificial layer on the device material layer;
forming a variable-depth structure in the sacrificial layer;
forming a hardmask and a photoresist stack over the sacrificial layer, wherein the photoresist stack comprises an optical planarization layer and a photoresist layer, wherein the photoresist layer is in direct contact with the optical planarization layer; etching the photoresist stack;
etching the hardmask; and
forming a plurality of device structures in the device material layer by etching through the device material layer.

7. The method of claim 6 , wherein the variable-depth structure changes in depth from a first end to a second end.

8. The method of claim 7 , wherein the depth of the variable-depth structure changes linearly from the first end to the second end.

9. The method of claim 7 , wherein the depth of the variable-depth structure changes non-linearly from the first end to the second end.

10. The method of claim 7 , wherein the depth of the variable-depth structure oscillates from the first end to the second end.

11. The method of claim 6 , further comprising; etching the sacrifical layer.

12. The method of claim 11 , wherein the etching of the sacrifical layer and the device material layer results in the transfer of the variable-depth structure into the device material layer.

Assignees

• Applied Materials Inc

Inventors

• Kurunczi Peter
• Olson Joseph C
• Evans Morgan
• Meyer Timmerman Thijssen Rutger

Classifications

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• B29C33/3842

  Manufacturing moulds, e.g. shaping the mould surface by machining · CPC title

• G02B2207/101

  Nanooptics · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F7/0005 Primary

  Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor · CPC title