Monomer, polymer, positive resist composition, and patterning process
US-2017008982-A1 · Jan 12, 2017 · US
US12092957B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12092957-B2 |
| Application number | US-202117508191-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 22, 2021 |
| Priority date | May 27, 2019 |
| Publication date | Sep 17, 2024 |
| Grant date | Sep 17, 2024 |
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A radiation-sensitive resin composition includes a resin having a partial structure represented by formula (1). R1 and R2 each independently represent a substituted or unsubstituted chain aliphatic hydrocarbon group having 1 to 6 carbon atoms or a substituted or unsubstituted alicyclic hydrocarbon group having 3 to 6 carbon atoms, or R1 and R2 are bonded to each other to form a part of a 3- to 6-membered cyclic structure together with the carbon atom to which R1 and R2 are bonded; R3 represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and containing a fluorine atom. No fluorine atom is bonded to carbon atoms located at α-, β- and γ-positions of the carbon atom to which R1 and R2 are bonded; and No fluorine atom is bonded to carbon atoms located at α- and β-positions of the carbon atom to which R3 is bonded.
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What is claimed is: 1. A radiation-sensitive resin composition comprising: a resin having a partial structure represented by formula (1); a radiation-sensitive acid generator; and a solvent; wherein, in the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted chain aliphatic hydrocarbon group having 1 to 6 carbon atoms or a substituted or unsubstituted alicyclic hydrocarbon group having 3 to 6 carbon atoms, or R 1 and R 2 are bonded to each other to form a part of a 3- to 6-membered cyclic structure together with the carbon atom to which R 1 and R 2 are bonded; R 3 represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and comprising an alicyclic ring, wherein the alicyclic ring comprises —CF 2 — group, and the carbon atom of the —CF 2 — group is a ring atom of the alicyclic ring; provided that in R 1 and R 2 , no fluorine atom is bonded to carbon atoms located at α-, β- and γ-positions of the carbon atom to which R 1 and R 2 are bonded; in R 3 , no fluorine atom is bonded to carbon atoms located at α- and β-positions of the carbon atom to which R 3 is bonded; and * represents a bond. 2. The radiation-sensitive resin composition according to claim 1 , wherein the partial structure represented by the formula (1) is a partial structure represented by formula (1-1-1), a partial structure represented by formula (1-1-2), a partial structure represented by formula (1-1-3), or a partial structure represented by formula (1-1-4): wherein, in the formulae (1-1-1), (1-1-2), (1-1-3), and (1-1-4), R 1 and R 2 have the same meanings as those in the formula (1); R f101 and R f102 are each a fluorine atom, and R f103 to R f119 each independently represent a fluorine atom, a fluorinated alkyl group having 1 to 3 carbon atoms, a hydrogen atom, or an alkyl group having 1 to 3 carbon atoms; provided that at least one of R f103 —C—R f104 and R f105 —C—R f106 , at least one of R f107 —C—R f108 , R f109 —C—R f110 and R f111 —C—R f112 , and at least one of R f113 —C—R f114 , R f115 —C—R f116 and R f118 —C—R f119 are —CF 2 — group; and * represents a bond. 3. The radiation-sensitive resin composition according to claim 1 , wherein the partial structure represented by the formula (1) is a partial structure represented by formula (1-2-1), a partial structure represented by formula (1-2-2), or a partial structure represented by formula (1-2-3): wherein, in the formulae (1-2-1), (1-2-2), and (1-2-3), R 1 and R 2 have the same meanings as those in the formula (1); R f201 and R f202 are each a fluorine atom, and R f203 to R f217 each independently represent a fluorine atom, a fluorinated alkyl group having 1 to 3 carbon atoms, a hydrogen atom, or an alkyl group having 1 to 3 carbon atoms; provided at least one of R f204 —C—R f205 and R f207 —C—R f208 , and at least one of R f210 —C—R f211 , R f213 —C—R f214 and R f216 —C—R f217 are —CF 2 — group; and * represents a bond. 4. The radiation-sensitive resin composition according to claim 1 , wherein a content of a structural unit having the partial structure represented by the formula (1) in the resin is 5 mol % or more and 40 mol % or less. 5. A method for forming a resist pattern, comprising: forming a resist film from the radiation-sensitive resin composition according to claim 1 ; exposing the resist film; and developing the exposed resist film. 6. The method for forming a resist pattern according to claim 5 , wherein the exposure is performed with use of ArF excimer laser light or extreme ultraviolet light. 7. The method for forming a resist pattern according to claim 5 , wherein the partial structure represented by the formula (1) is a partial structure represented by formula (1-1-1), a partial structure represented by formula (1-1-2), a partial structure represented by formula (1-1-3), or a partial structure represented by formula (1-1-4): wherein, in the formulae (1-1-1), (1-1-2), (1-1-3), and (1-1-4), R 1 and R 2 have the same meanings as those in the formula (1); R f101 and R f102 are each a fluorine atom, and R f103 to R f119 each independently represent a fluorine atom, a fluorinated alkyl group having 1 to 3 carbon atoms, a hydrogen atom, or an alkyl group having 1 to 3 carbon atoms; provided that at least one of R f103 —C—R f104 and R f105 —C—R f106 , at least one of R f107 —C—R f108 , R f109 —C—R f110 and R f111 —C—R f112 , and at least one of R f113 —C—R f114 , R f115 —C—R f116 and R f118 —C—R f119 are CF 2 ; and * represents a bond. 8. The method for forming a resist pattern according to claim 5 , wherein the partial structure represented by the formula (1) is a partial structure represented by formula (1-2-1), a partial structure represented by formula (1-2-2), or a partial structure represented by formula (1-2-3): wherein, in the formulae (1-2-1), (1-2-2), and (1-2-3), R 1 and R 2 have the same meanings as those in the formula (1); R f201 and R f202 are each a fluorine atom, and R f203 to R f217 each independently represent a fluorine atom, a fluorinated alkyl group having 1 to 3 carbon atoms, a hydrogen atom, or an alkyl group having 1 to 3 carbon atoms; provided at least one of R f204 —C—R f205 and R f207 —C—R f208 , and at least one of R f210 —C—R f211 , R f213 —C—R f214 and R f216 —C—R f217 are CF 2 ; and * represents a bond. 9. The method for forming a resist pattern according to claim 5 , wherein a content of a structural unit having the partial structure represented by the formula (1) in the resin is 5 mol % or more and 40 mol % or less. 10. The method for forming a resist pattern according to claim 5 , wherein the resin comprises a first structural unit, and the partial structure represented by the formula (1) is introduced as a side chain structure of the first structural unit. 11. The method for forming a resist pattern according to claim 10 , wherein the resin further comprises a second structural unit which comprises an acid-dissociable group. 12. The method for forming a resist pattern according to claim 10 , wherein the resin further comprises a third structural unit which comprises a group comprising at least one structure selected from the group consisting of a lactone structure, a cyclic carbonate structure, and a sultone structure. 13. The radiation-sensitive resin composition according to claim 1 , wherein the resin comprises a first structural unit, and the partial structure represented by the formula (1) is introduced as a side chain structure of the first structural unit. 14. The radiation-sensitive resin composition according to claim 13 , wherein the resin further comprises a second structural unit which comprises an acid-dissociable group. 15. The radiation-sensitive resin composition according to claim 14 , wherein a content of the second structural unit is 10 to 70 mol % relative to total structural uni
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