Molybdenum deposition

Patent metadata

Field	Value
Publication number	US-12074029-B2
Application number	US-202217814209-A
Country	US
Kind code	B2
Filing date	Jul 21, 2022
Priority date	Nov 19, 2018
Publication date	Aug 27, 2024
Grant date	Aug 27, 2024

Abstract

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.

First claim

The invention claimed is:

1. A method comprising:
forming a first molybdenum (Mo) layer by exposing a substrate in a reaction chamber to a molybdenum oxychloride and boron-containing reducing; and
forming a bulk conductive layer on the first Mo layer using hydrogen (H 2 ) as a reducing agent wherein the bulk conductive layer is formed by ALD.

2. The method of claim 1 , wherein the bulk conductive layer is a molybdenum (Mo) layer.

3. The method of claim 1 , wherein forming the first Mo layer further comprises exposing the substrate to H 2 .

4. The method of claim 1 , wherein the substrate temperature during formation of the first Mo layer is between 300° C. and 800° C.

5. The method of claim 1 , wherein the molybdenum oxychloride is molybdenum dichloride dioxide (MoO 2 Cl 2 ).

6. The method of claim 1 , wherein the first Mo layer is formed by atomic layer deposition (ALD).

7. The method of claim 1 , wherein the bulk conductive layer is tungsten.

8. The method of claim 1 , wherein the first Mo layer has less than 1 (atomic) % impurities.

9. The method of claim 1 , wherein the first Mo layer is between 1 and 10 nm thick.

10. The method of claim 1 , wherein the first Mo layer overlies a dielectric layer.

11. The method of claim 1 , wherein the first Mo layer is free of fluorine impurities.

Assignees

• Lam Res Corp

Inventors

• Van Cleemput Patrick A
• Thombare Shruti Vivek
• Danek Michal

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10P14/418 Primary

  the conductive layers comprising transition metals · CPC title

• H10W20/425 Primary

  Barrier, adhesion or liner layers · CPC title