Shape memory thermal capacitor and methods for same
US-11558957-B2 · Jan 17, 2023 · US
US12071583B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12071583-B2 |
| Application number | US-202016910652-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2020 |
| Priority date | Jun 26, 2019 |
| Publication date | Aug 27, 2024 |
| Grant date | Aug 27, 2024 |
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A heat exchange component includes a part configured for exchanging thermal energy, the part is formed of at least one solid state Martensitic transformation phase change material which is configured to readily undergo a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the heat exchange component. In some embodiments, the system further includes a temporally-evolving external temperature/heat source which changes the temperature and resultant phase of the solid-state phase change material. The temporally-evolving external temperature/heat source may involve a solid conducting material or electronic/photonic component, a fluid, a plasma, and/or a radiation source. The heat exchange component may be configured as a flat plate, tube, finned structure, porous structure, graded structure, cold plate, heat exchanger, condenser, evaporator, or any component generally regarded as a thermal energy storage or heat transfer structure in various embodiments.
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We claim: 1. A heat exchange component comprising: a part configured for exchanging thermal energy, said part formed of at least one solid state (SS) Martensitic transformation (MT) phase change material (PCM) which is configured to readily undergo a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the heat exchange component and a transition between crystalline structures does not involve or result in physical deformation of the part; and wherein the part is a heat exchange structure selected from the group consisting of: a heat spreader, a heat sink, a condenser, a radiator, a fin or fins, and a fluidic channel; and wherein the component is configured to exchange thermal energy with a thermal transfer fluid that is internal and/or external to the component. 2. The component of claim 1 , wherein the one crystalline structure comprises one of B2, R-phase, B19, and B19′ crystalline lattice and the another crystalline structure comprises another of B2, R-phase, B19, and B19′ crystalline lattice. 3. The component of claim 1 , wherein part comprises (i) one portion formed of a first SS MT PCM being configured to change crystalline structure at a first temperature, and (ii) at least another portion formed of a second SS MT PCM being configured to change crystalline structure at a second different temperature. 4. The component of claim 1 , wherein the martensitic transformation is reversible. 5. The component of claim 1 , wherein the part is fully or partially formed of SS MT PCM. 6. The component of claim 1 , wherein the SS MT PCM comprises: a shape memory alloy (SMA), ceramic or other metal and/or alloy which readily undergoes a solid-solid martensitic transformation. 7. The component of claim 6 , wherein the SMA comprises: a nickel-titanium-based alloy system, a copper-based alloy system, or a magnetic alloy system. 8. The component of claim 1 , wherein the SS MT PCM has a Figure of Merit (FOM) of at least 15×10 6 J 2 /Ksm 4 . 9. The component of claim 1 , wherein, through heating or melting, the thermal conductivity, transformation temperature and latent heat of the SS MT PCM are altered at least partially. 10. The component of claim 1 , further configured to incorporate a solid-to-liquid or liquid-to-vapor/gas phase change material. 11. A thermal energy storage and/or heat transfer system comprising: a temporally-evolving temperature source heat source; and a component according to claim 1 , wherein the SS MT PCM of the component readily undergoes a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the thermal energy storage and/or heat transfer system. 12. The system of claim 11 , wherein the temporally-evolving temperature heat source comprises a solid conducting material, an electronic/photonic component, a fluid, a plasma, and/or a radiation source. 13. An electronic interconnect system comprising: an electronic component which generates heat; and a component according to claim 1 connected to said electronic component and configured to conduct electricity, wherein the SS MT PCM of the component readily undergoes a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the electronic interconnect system. 14. The electronic interconnect system according to claim 13 , wherein the electronic component comprises one or more of: integrated circuits, chips, resistors, capacitors, inductors, diodes, transistors, transformers, fuses, and switches. 15. The electronic interconnect system according to claim 14 , wherein the electronic component is configured as one or more of: junctions, metallic traces, wirebonds, and solder bonds. 16. A method of operating a heat exchange system comprising: heating or cooling a component according to claim 1 to allow the SS MT PCM of the component to readily undergo a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the heat exchange system. 17. A method of lowering the operational temperature of a component in a system which stores and/or transfers heats, the method comprising: substituting a component in the system with a component according to claim 1 , wherein the SS MT PCM of the component readily undergoes a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the thermal energy storage and/or heat transfer system so as to lower the operational temperature of the component in the system compared to the substituted component. 18. A method of increasing the time of use of a component in a system which stores and/or transfers heats, the method comprising: substituting a component in the system with a component according to claim 1 , wherein the SS MT PCM of the component readily undergoes a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the thermal energy storage and/or heat transfer system so as to increase the time of use of the component in the system compared to the substituted component. 19. A method of designing a component formed of a solid state (SS) Martensitic transformation (MT) phase change material (PCM) which readily undergoes a solid-solid phase change during normal and/or anticipated operating temperatures component in a system which stores and/or transfers heats, the method comprising: identifying an application system which generates, stores or transfers heat; identifying a component according to claim 1 to be used for the identified application system, wherein the SS MT PCM of the component is configured to readily undergo a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the application system; determining key parameters of the identified application system; and optimizing said component for the identified application system based on the determined key parameters. 20. The method of claim 19 , wherein determining key parameters comprises identifying one or more of: cycle speed, heat load, maximum and minimum temperature range, heat transfer media, size, weight constraints, and locations(s) for the component in the application system architecture. 21. A method a fabricating a heat exchange component comprising: forming a component according to claim 1 , wherein the SS MT PCM of the fabricated component is configured to readily undergo a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the heat exchange component. 22. The method of claim 21 , further comprising: heating or melting the SS MT PCM to alter its
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