Arrangement of a power semiconductor module and a cooler

Patent metadata

Field	Value
Publication number	US-12068174-B2
Application number	US-202017630080-A
Country	US
Kind code	B2
Filing date	Jul 24, 2020
Priority date	Jul 25, 2019
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

In one embodiment a power semiconductor module includes a substrate having a first substrate side for carrying an electric circuit and having a second substrate side being located opposite to the first substrate side. The second substrate side has a flat surface and is adapted for coming in contact with a cooler. A cooling area that is surrounded by a connecting area is located at the second substrate side. A first casing component of the cooler is connected to the second substrate side at the connecting area and a second casing component is connected to the first casing component such that a cooling channel for providing the cooling area with cooling fluid is provided between the first casing component and the second casing component. A cooling structure can be welded to the cooling area at the second substrate side.

First claim

The invention claimed is:

1. A method comprising:
providing a power semiconductor module that comprises a substrate having a first substrate side for carrying at least one electric circuit and having a second substrate side being located opposite to the first substrate side, wherein the second substrate side has a flat surface, and wherein located at the second substrate side is a cooling area that is surrounded by a connecting area;
connecting a first casing component of a cooler to the second substrate side at the connecting area,
connecting a second casing component to the first casing component such that a cooling channel for providing the cooling area with cooling fluid is provided between the first casing component and the second casing component; and
welding a cooling structure to the cooling area at the second substrate side, the cooling structure having a wavy form.

2. The method according to claim 1 , wherein the first casing component comprises an opening for receiving the cooling area.

3. The method according to claim 2 , wherein the first casing component is welded to the connecting area of the second substrate side along a welding path that fully surrounds the opening.

4. The method according to claim 1 , wherein the cooling structure is welded to the first casing component or to the second casing component.

5. The method according to claim 1 , wherein the cooling structure is designed in a one-part form with the first casing component or with the second casing component.

6. The method according to claim 1 , wherein the first casing component is connected to the second substrate side by welding.

7. The method according to claim 1 , wherein the second casing component is connected to the first casing component by welding.

8. The method according to claim 1 , wherein the welding comprises laser welding.

9. The method according to claim 1 , wherein the welding is performed before connecting the second casing component to the first casing component.

10. The method according to claim 1 , wherein the welding is performed at the same time as the second casing component is connected to the first casing component.

11. A method comprising:
providing a power semiconductor module comprising a substrate having a first substrate side for carrying at least one electric circuit and having a second substrate side being located opposite to the first substrate side, wherein the power semiconductor module comprises a baseplate, wherein the baseplate comprises a first baseplate side and a second baseplate side being located opposite to the first baseplate side, wherein the second substrate side is connected to the first baseplate side, wherein the second baseplate side has a flat surface, and wherein located at the second baseplate side is a cooling area which is surrounded by a connecting area;
connecting a first casing component of a cooler to the second baseplate side at the connecting area;
connecting a second casing component to the first casing component such that a cooling channel for providing the cooling area with cooling fluid is provided between the first casing component and the second casing component; and
welding a cooling structure to the cooling area at the second baseplate side, the cooling structure having a wavy form.

12. The method according to claim 11 , wherein the first casing component comprises an opening for receiving the cooling area.

13. The method according to claim 12 , wherein the first casing component is welded to the connecting area of the second baseplate side along a welding path that fully surrounds the opening.

14. The method according to claim 11 , wherein the cooling structure is welded to the first casing component or to the second casing component.

15. The method according to claim 11 , wherein the cooling structure is designed in a one-part form with the first casing component or with the second casing component.

16. The method according to claim 11 , wherein the first casing component is connected to the second baseplate side welding.

17. The method according to claim 11 , wherein the second casing component is connected to the first casing component by welding.

18. The method according to claim 11 , wherein the welding comprises laser welding.

19. The method according to claim 11 , wherein the welding is performed before connecting the second casing component to the first casing component.

20. The method according to claim 11 , wherein the welding is performed at the same time as the second casing component is connected to the first casing component.

21. A device comprising:
a power semiconductor module comprising a substrate having a first substrate side that carries an electric circuit and having a second substrate side being located opposite to the first substrate side; and
a cooler;
wherein either the second substrate side has a flat surface and a cooling area that is surrounded by a connecting area is located at the second substrate side, wherein the second substrate side is in contact with the cooler such that a first casing component of the cooler is connected to the second substrate side at the connecting area, wherein the first casing component comprises an opening for receiving the cooling area, wherein a second casing component is connected to the first casing component such that a cooling channel for cooling fluid is provided between the first casing component and the second casing component, wherein a cooling structure having a wavy form is welded to the cooling area at the second substrate side of the substrate, and wherein the cooling structure and the first casing component or the second casing component form a continuous structural element;
or the power semiconductor module comprises a baseplate, wherein the baseplate comprises a first baseplate side and a second baseplate side being located opposite to the first baseplate side, wherein the first baseplate side is connected to the second substrate side and the second baseplate side has a flat surface, and located at the second baseplate side is a cooling area which is surrounded by a connecting area, wherein the second baseplate side is in contact with the cooler such, that a first casing component of the cooler is connected to the second baseplate side of the baseplate at the connecting area, wherein the first casing component comprises at least one opening for receiving the cooling area, wherein a second casing component is connected to the first casing component such, that a cooling channel for cooling fluid is provided between the first casing component and the second casing component, wherein a cooling structure having a wavy form is welded to the cooling area at the second baseplate side, and wherein the cooling structure and at least one of the first casing component and the second casing component form a continuous structural element.

22. The device according to claim 21 , wherein the power semiconductor module is a transfer-molded module.

23. The device according to claim 21 , wherein the power semiconductor module is a three phase module.

Assignees

• Hitachi Energy Ltd

Inventors

• Torresin Daniele
• Mohn Fabian
• Agostini Bruno
• Gradinger Thomas
• Schuderer Juergen

Classifications

• H10W70/048

  Mechanical treatments, e.g. punching, cutting, deforming or cold welding · CPC title

• H10W40/228

  the projecting parts being wire-shaped or pin-shaped · CPC title

• H10W40/226

  characterised by projecting parts, e.g. fins to increase surface area (leadframes for cooling H10W70/461) · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title