Methods and apparatus for mask patterning debris removal

Patent metadata

Field	Value
Publication number	US-12068159-B2
Application number	US-202117219082-A
Country	US
Kind code	B2
Filing date	Mar 31, 2021
Priority date	Mar 31, 2021
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

First claim

The invention claimed is:

1. An apparatus for a mask patterning laser, comprising:
a cylindrical housing with a partially enclosed end with an annular collar with a central opening configured to engage over an outer portion of a housing of a lens assembly of the mask patterning laser and seal the partially enclosed end;
a first extension on an outer surface of the cylindrical housing, the first extension has an angled top surface that slopes downward from a top surface of the partially enclosed end outward and a first opening in the first extension extending downward from the top surface of the partially enclosed end and at an angle to the central opening and configured to supply pressurized gas at a focal point of the mask patterning laser; and
a second extension on the outer surface of the cylindrical housing, the second extension positioned opposite the first extension with an angled top surface that slopes downward from the top surface of the partially enclosed end outward and a second opening in the second extension extending downward from the top surface of the partially enclosed end and at an angle to the central opening and configured to exhaust debris from the focal point of the mask patterning laser.

2. The apparatus of claim 1 , wherein the first extension is configured to flow pressurized gas at an angle of approximately 60 degrees to approximately 85 degrees toward a center of an open end of the cylindrical housing that is distal to the partially enclosed end.

3. The apparatus of claim 1 , wherein the first extension is configured to flow pressurized gas at an angle of approximately 75 degrees to less than 90 degrees toward a center of an open end of the cylindrical housing that is distal to the partially enclosed end.

4. An apparatus for a mask patterning laser, comprising:
a cylindrical housing with a partially enclosed end with an annular collar with a central opening configured to engage over an outer portion of a housing of a lens assembly of the mask patterning laser and seal the partially enclosed end;
at least one gas inlet port on a top surface of the partially enclosed end that is fluidly coupled to a gas distribution plenum positioned within the partially enclosed end of the cylindrical housing and wherein the gas distribution plenum is fluidly coupled to a plurality of gas nozzles surrounding the central opening that supply pressurized gas directed inward and downward; and
at least one evacuation port on the top surface of the partially enclosed end that is fluidly coupled to one or more negative pressure areas within the cylindrical housing.

5. The apparatus of claim 4 , wherein the plurality of gas nozzles supply pressurized gas at an angle of approximately 60 degrees to approximately 85 degrees relative to the partially enclosed end.

6. The apparatus of claim 4 , wherein the plurality of gas nozzles are configured to supply pressurized gas at an angle of approximately 75 degrees to less than 90 degrees relative to the partially enclosed end.

7. The apparatus of claim 4 , wherein a negative pressure area forms a negative pressure channel around an inner circumference of the cylindrical housing at the partially enclosed end.

8. The apparatus of claim 4 , further comprising:
a negative pressure plenum fluidly coupled to the at least one evacuation port and fluidly coupled to a plurality of debris evacuation inlets on an inner surface of the partially enclosed end.

Assignees

• Applied Materials Inc

Inventors

• Balakrishnan Karthik Narayanan
• Park Jungrae
• Tatti Arunkumar
• Thirunavukarasu Sriskantharajah
• Peh Eng Sheng

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• B23K26/142

  for the removal of by-products · CPC title