Porous platinum nanorod electrode array flexible sensor devices and fabrication

Patent metadata

Field	Value
Publication number	US-12065745-B2
Application number	US-201917291236-A
Country	US
Kind code	B2
Filing date	Nov 7, 2019
Priority date	Nov 8, 2018
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

A method for fabricating a Pt nanorod electrode array sensor device includes forming planar metal electrodes on a flexible film, co-depositing Pt alloy on the planar metal electrodes via physical vapor deposition, and dealloying the Pt alloy to etch Pt nanorods from the deposited Pt alloy. A Pt nanorod electrode sensor device includes a plurality of porous Pt nanorods on a planar metal electrode forming a sensor electrode. The planar metal electrode is on a flexible substrate. An electrode lead on the flexible substrate extends away from the planar metal electrode. Insulation is around porous Pt nanorods an upon the electrode lead.

First claim

The invention claimed is:

1. A method for fabricating a Pt nanorod electrode array sensor device, comprising:
forming planar metal electrodes on a flexible film;
co-depositing Pt alloy on the planar metal electrodes via physical vapor deposition;
dealloying the Pt alloy to etch Pt nanorods from the deposited Pt alloy.

2. The method of claim 1 , wherein the Pt alloy comprises PtAg.

3. The method of claim 2 , wherein the planar metal electrodes comprise Pt.

4. The method of claim 2 , wherein the planar metal electrodes comprise Ag.

5. The method of claim 1 , comprising:
coating a carrier substrate with a first anti-adhesion layer; depositing the flexible film on the first anti-adhesion layer; patterning the flexible film for the planar metal electrodes and electrode leads; depositing the planar metal electrodes and electrode leads; depositing an adhesion layer on the planar metal electrodes; conducting the co-depositing of the Pt alloy; and conducting the dealloying the Pt alloy.

6. The method of claim 5 , wherein the de-alloying comprises an immersion in acid that selectively etches an alloyed metal with Pt in the deposited Pt alloy.

7. The method of claim 5 , further comprising: passivating electrode and electrode lead areas with a passivation layer; depositing a second anti-adhesion layer on the passivation layer; depositing a sacrificial layer on the second anti-adhesion layer; selectively etching the passivation layer over electrode sites to expose the electrode sites with Pt nanorods; peeling the sacrificial layer; peeling the flexible film from the carrier substrate.

8. The method of claim 1 , wherein the Pt alloy comprises Pt with another metal that can be selectively etched after deposition of the Pt alloy.

Assignees

• Univ California

Inventors

• Dayeh Shadi A
• Ganji Mehran

Classifications

• G06F3/015

  Input arrangements based on nervous system activity detection, e.g. brain waves [EEG] detection, electromyograms [EMG] detection, electrodermal response detection · CPC title

• C23C14/5873

  Removal of material · CPC title

• C23C14/16

  on metallic substrates or on substrates of boron or silicon · CPC title

• C22C5/04 Primary

  Alloys based on a platinum group metal · CPC title

• C23F1/02 Primary

  Local etching · CPC title