Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12065736-B2
Application number	US-202318323092-A
Country	US
Kind code	B2
Filing date	May 24, 2023
Priority date	Feb 23, 2018
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

First claim

What is claimed is:

1. A cleaning method, comprising:
removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container,
wherein the removing the deposit includes repeatedly performing a cycle including:
a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container;
a second process of stopping the supplying the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and
a third process of cooling an exhaust pipe connected to the process container, while maintaining a pressure inside the process container at a second pressure, which is lower than the predetermined first pressure,

wherein, for each cycle, a temperature of the exhaust pipe is detected,
wherein, for each cycle, a duration of the third process is determined based on the detected temperature in a manner that:
if the detected temperature is higher than a second temperature that is higher than a first temperature, the duration is extended until the temperature of the exhaust pipe becomes equal to or lower than the first temperature; and
if the detected temperature is not higher than the second temperature, the duration is set to a predetermined time, and

wherein the first process includes an operation of exhausting the cleaning gas to maintain the predetermined first pressure while continuing to supply the cleaning gas.

2. The cleaning method of claim 1 , wherein a first duration of the third process in a first one of the repeated cycle is longer than a second duration of the third process in a second one of the repeated cycle after the first cycle, and
wherein the first one of the repeated cycle starts in a state in which the temperature of the exhaust pipe is equal to or lower than the first temperature and the second one of the repeated cycle starts in a state in which the temperature of the exhaust pipe is higher than the first temperature.

3. The cleaning method of claim 1 , wherein in the operation of exhausting the cleaning gas, the cleaning gas is exhausted using a vacuum pump to maintain the predetermined first pressure while continuing to supply the cleaning gas at a constant flow rate,
wherein the third process measures the temperature of the exhaust pipe by using a temperature detector installed at the exhaust pipe,
wherein the first process and the third process perform a pressure adjustment by using a pressure regulator installed at the exhaust pipe,
wherein the first process supplies the cleaning gas with a gas supplier connected to a gas supply system and configured to supply the cleaning gas inside the process container, and
wherein the process container includes:
a cylindrical portion having a closed upper end portion and an opened lower end portion; and
a gas exhaust area formed outside a side wall of the cylindrical portion and connected to an exhaust system configured to exhaust an atmosphere in the process container.

4. The cleaning method of claim 1 , wherein the third process includes:
determining whether the temperature of the exhaust pipe detected during the third process and/or the second process immediately prior to the third process is equal to or lower than the second temperature;
in response to determining that the temperature of the exhaust pipe is higher than the second temperature, performing the cooling the exhaust pipe until the temperature of the exhaust pipe becomes equal to or lower than the first temperature; and
in response to determining that the temperature of the exhaust pipe is equal to or lower than the second temperature, performing the cooling the exhaust pipe and terminating the cooling the exhaust pipe before the temperature of the exhaust pipe becomes the first temperature.

5. The cleaning method of claim 1 , wherein the third process includes:
determining whether a highest temperature of the exhaust pipe detected during the third process is equal to or lower than the second temperature.

6. The cleaning method of claim 1 , wherein the process container includes:
a cylindrical portion having a closed upper end portion and an opened lower end portion; and
a gas exhaust area formed outside a side wall of the cylindrical portion and connected to an exhaust system configured to exhaust an atmosphere in the process container.

7. The cleaning method of claim 1 , wherein the second temperature is a temperature lower than a temperature at which the exhaust pipe is corroded.

8. The cleaning method of claim 1 , wherein the cleaning gas is a mixed gas of a fluorine-based gas and a reaction promoting gas, and
wherein the deposit is a silicon oxycarbonitride film.

9. The cleaning method of claim 1 , wherein the cleaning gas is a mixed gas of a fluorine gas and a nitric oxide gas, and
wherein the deposit is a silicon oxycarbonitride film.

10. The cleaning method of claim 1 , wherein the second process raises the temperature of the exhaust pipe after stopping supplying the cleaning gas into the process container.

11. The cleaning method of claim 1 , wherein the third process raises the temperature of the exhaust pipe higher than a temperature at a transition from the second process to the third process.

12. The cleaning method of claim 1 , wherein in the removing the deposit, the cycle is repeated 30 times.

13. A method of manufacturing a semiconductor device comprising:
performing the cleaning method of claim 1 ; and
forming a film on a substrate in the process container.

14. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform the cleaning method of claim 1 .

15. The cleaning method of claim 7 , wherein in the third process, the exhaust pipe is naturally cooled, or the exhaust pipe is forcibly cooled by supplying an inert gas into the exhaust pipe.

Assignees

• Kokusai Electric Corp

Inventors

• Miyashita Naoya
• Kuribayashi Koei
• Taniyama Tomoshi

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P72/0434 Primary

  mainly by convection · CPC title