Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
US-11063210-B2 · Jul 13, 2021 · US
Magnetoresistance effect element
US12048251B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12048251-B2 |
| Application number | US-202117345084-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 11, 2021 |
| Priority date | Nov 14, 2017 |
| Publication date | Jul 23, 2024 |
| Grant date | Jul 23, 2024 |
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Abstract
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Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.
First claim
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What is claimed is: 1. A magnetoresistance effect element, comprising: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the nonmagnetic layer is constituted by a metal, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer. 2. The magnetoresistance effect element according to claim 1 , wherein, in a first direction extending the first ferromagnetic layer, the second ferromagnetic layer, and the nonmagnetic layer, an inclination angle of a first inclined surface including a first side surface of the first ferromagnetic layer, a first side surface of the second ferromagnetic layer and a first side surface of the nonmagnetic layer with respect to a lamination direction is greater than an inclination angle of a second inclined surface including a second side surface of the first ferromagnetic layer, a second side surface of the second ferromagnetic layer and a second side surface of the nonmagnetic layer, which intersect the first direction, with respect to the lamination direction. 3. The magnetoresistance effect element according to claim 1 , wherein in a first direction extending the first ferromagnetic layer, the second ferromagnetic layer, and the nonmagnetic layer, an inclination angle of a first inclined surface including a first side surface of the first ferromagnetic layer, a first side surface of the second ferromagnetic layer and a first side surface of the nonmagnetic layer with respect to a lamination direction is 45° or greater. 4. The magnetoresistance effect element according to claim 2 , wherein in the first direction an inclination angle of the first inclined surface with respect to the lamination direction is 45° or greater.
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- What does patent US12048251B2 cover?
- Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect …
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification H10N50/85. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 23 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).