Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

Patent metadata

Field	Value
Publication number	US-10644228-B2
Application number	US-201816178082-A
Country	US
Kind code	B2
Filing date	Nov 1, 2018
Priority date	Nov 14, 2017
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

First claim

The invention claimed is:

1. A spin-orbit-torque magnetization rotational element, comprising:
a spin-orbit torque wiring that extends in a first direction; and
a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring,
wherein a side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface, and
an inclination angle of a first inclined surface including a first side surface of the spin-orbit torque wiring and a first side surface of the first ferromagnetic layer in the first direction with respect to a lamination direction is greater than an inclination angle of a second inclined surface including a second side surface of the spin-orbit torque wiring and a second side surface of the first ferromagnetic layer, which intersect the first direction, with respect to the lamination direction.

2. The spin-orbit-torque magnetization rotational element according to claim 1 ,
wherein an inclination angle of a first inclined surface including the first side surface of the spin-orbit torque wiring and the first side surface of the first ferromagnetic layer in the first direction with respect to the lamination direction is 45° or greater.

3. The spin-orbit-torque magnetization rotational element according to claim 2 , further comprising:
two via wirings extending from a surface of the spin-orbit torque wiring which is opposite to the first ferromagnetic layer,
wherein the two via wirings are located at positions at which the first ferromagnetic layer is sandwiched when viewed from the lamination direction, and partially overlap the first ferromagnetic layer.

4. The spin-orbit-torque magnetization rotational element according to claim 2 , further comprising:
an underlayer between the spin-orbit torque wiring and the first ferromagnetic layer,
wherein side surfaces of the spin-orbit torque wiring, the first ferromagnetic layer, and the underlayer form a continuous inclined surface in any side surface.

5. The spin-orbit-torque magnetization rotational element according to claim 1 , further comprising:
two via wirings extending from a surface of the spin-orbit torque wiring which is opposite to the first ferromagnetic layer,
wherein the two via wirings are located at positions at which the first ferromagnetic layer is sandwiched when viewed from the lamination direction, and partially overlap the first ferromagnetic layer.

6. The spin-orbit-torque magnetization rotational element according to claim 5 , further comprising:
an underlayer between the spin-orbit torque wiring and the first ferromagnetic layer,
wherein side surfaces of the spin-orbit torque wiring, the first ferromagnetic layer, and the underlayer form a continuous inclined surface in any side surface.

7. The spin-orbit-torque magnetization rotational element according to claim 1 , further comprising:
an underlayer between the spin-orbit torque wiring and the first ferromagnetic layer,
wherein side surfaces of the spin-orbit torque wiring, the first ferromagnetic layer, and the underlayer form a continuous inclined surface in any side surface.

8. A spin-orbit-torque magnetization rotational element, comprising:
a spin-orbit torque wiring that extends in a first direction;
a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring, and
an underlayer between the spin-orbit torque wiring and the first ferromagnetic layer,
wherein a side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface, and
wherein the underlayer is amorphous.

9. A spin-orbit-torque magnetization rotational element, comprising:
a spin-orbit torque wiring that extends in a first direction;
a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring, and
a magnetization control layer between the spin-orbit torque wiring and the first ferromagnetic layer,
wherein a side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface,
side surfaces of the spin-orbit torque wiring, the first ferromagnetic layer, and the magnetization control layer form a continuous inclined surface in any side surface, and
a crystal structure of the magnetization control layer is tetragonal.

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• SHIOKAWA Yohei
• Komura Eiji
• SUDA Keita

Classifications

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/18

  using Hall-effect devices · CPC title

• G11C11/1659

  Cell access · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title