Sensor system with a microelectromechanical sensor element and method for producing a sensor system

Patent metadata

Field	Value
Publication number	US-12043539-B2
Application number	US-202217658465-A
Country	US
Kind code	B2
Filing date	Apr 8, 2022
Priority date	Apr 29, 2021
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

A sensor system with a first semiconductor die part and with a second semiconductor die part is proposed, wherein the first semiconductor die part has a microelectromechanical sensor element, wherein the second semiconductor die part covers the microelectromechanical sensor element, wherein the second semiconductor die part has a via for electrically contacting the microelectromechanical sensor element, in particular directly. A method for producing a sensor system is also proposed.

First claim

What is claimed is:

1. A sensor system comprising:
a first semiconductor die part, and
a second semiconductor die part,
wherein the first semiconductor die part includes a microelectromechanical sensor element,
wherein the second semiconductor die part covers the microelectromechanical sensor element,
wherein the second semiconductor die part includes a via for electrically contacting the microelectromechanical sensor element, and
wherein the via extends through the second semiconductor die part and through a contact surface provided between the first semiconductor die part and the second semiconductor die part.

2. The sensor system as claimed in claim 1 , wherein the second semiconductor die part includes a semiconductor device,
wherein the via connects the semiconductor device to the microelectromechanical sensor element in an electrically conductive manner.

3. The sensor system as claimed in claim 2 , wherein the semiconductor device is included in an integrated semiconductor circuit for evaluating the microelectromechanical sensor element.

4. The sensor system as claimed in claim 2 , wherein the semiconductor device is included in a protective system for the microelectromechanical sensor element against electrostatic discharge.

5. The sensor system as claimed in claim 2 , wherein the semiconductor device is included in a memory for storing calibration data of the microelectromechanical sensor element.

6. The sensor system as claimed in claim 2 , wherein the semiconductor device comprises a temperature sensor.

7. The sensor system as claimed in claim 1 , wherein the microelectromechanical sensor element includes one or more of an acceleration sensor element or a vibrating structure gyroscope.

8. The sensor system as claimed in claim 7 , wherein the via is directly connected in an electrically conductive manner to one or more of a stator or an armature of a rotor of the acceleration sensor element.

9. The sensor system as claimed in claim 1 , wherein the second semiconductor die part includes an integrated sensor element.

10. The sensor system as claimed in claim 1 , wherein the sensor system includes a contact pad,
wherein the contact pad is arranged on a side of the second semiconductor die part opposite the contact surface, and
wherein the contact pad is electrically conductively connected to the via.

11. The sensor system as claimed in claim 1 , wherein the via directly contacts the microelectromechanical sensor element.

12. A sensor system, comprising:
a microelectromechanical sensor element included in a first semiconductor die part; and
a semiconductor device included in a second semiconductor die part,
wherein the second semiconductor die part covers the microelectromechanical sensor element,
wherein a via extends through the second semiconductor die part and through a contact surface provided between the first semiconductor die part and the second semiconductor die part, and
wherein the via connects the semiconductor device to the microelectromechanical sensor element in an electrically conductive manner.

13. The sensor system as claimed in claim 12 , wherein the semiconductor device is included in an integrated semiconductor circuit for evaluating the microelectromechanical sensor element.

14. The sensor system as claimed in claim 12 , wherein the semiconductor device is included in a protective system for the microelectromechanical sensor element against electrostatic discharge.

15. The sensor system as claimed in claim 12 , wherein the semiconductor device is included in a memory for storing calibration data of the microelectromechanical sensor element.

16. The sensor system as claimed in claim 12 , wherein the semiconductor device comprises a temperature sensor.

17. The sensor system as claimed in claim 12 , wherein the microelectromechanical sensor element includes one or more of an acceleration sensor element or a vibrating structure gyroscope.

18. The sensor system as claimed in claim 17 , wherein the via is directly connected in an electrically conductive manner to one or more of a stator or an armature of a rotor of the acceleration sensor element.

19. A sensor system, comprising:
a microelectromechanical sensor element included in a first semiconductor die part; and
an integrated sensor element included in a second semiconductor die part,
wherein the second semiconductor die part covers the microelectromechanical sensor element, and
wherein a via extends through the second semiconductor die part and through a contact surface provided between the first semiconductor die part and the second semiconductor die part.

20. The sensor system as claimed in claim 19 , further comprising:
a contact pad, wherein the contact pad is arranged on a side of the second semiconductor die part opposite the contact surface, and
wherein the contact pad is electrically conductively connected to the via.

Assignees

• Infineon Tech Dresden Gmbh & Co Kg

Inventors

• Meinhold Dirk
• Bieselt Steffen
• Hengst Claudia
• Koehler Daniel
• Landgraf Erhard
• Pregl Sebastian

Classifications

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10D87/00

  Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate · CPC title

• B81B2201/0242

  Gyroscopes · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• B81C2203/0771

  Stacking the electronic processing unit and the micromechanical structure · CPC title