Integrated circuit with a pressure sensor

US2016377497A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016377497-A1
Application numberUS-201615258988-A
CountryUS
Kind codeA1
Filing dateSep 7, 2016
Priority dateJun 12, 2012
Publication dateDec 29, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.

First claim

Opening claim text (preview).

What is claimed is: 1 . An integrated circuit, comprising: a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising: a pair of electrodes laterally separated from each other; and a flexible membrane spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, wherein the flexible membrane comprises a metal layer having at least one aperture and a capping layer filling the at least one aperture. 2 . The integrated circuit of claim 1 , wherein the electrodes are interdigitated electrodes. 3 . An integrated circuit, comprising: a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising: a pair of electrodes laterally separated from each other; and a flexible membrane spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, wherein the flexible membrane comprises a conductive layer that is connected to ground. 4 . The integrated circuit of claim 3 , wherein the semiconductor substrate is grounded. 5 . The integrated circuit of claim 3 , wherein the integrated circuit comprises an interconnect layer underneath the pair of electrodes, and wherein the interconnect layer is grounded. 6 . An integrated circuit, comprising: a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising: a pair of electrodes laterally separated from each other; and a flexible membrane spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, wherein the integrated circuit comprises one or more trenches defining a guard around the cavity, wherein the trenches are filled with a conductive material. 7 . The integrated circuit of claim 6 , wherein the guard is realized as a guard ring around the cavity. 8 . The integrated circuit of claim 6 , wherein the flexible membrane comprises a conductive layer, and wherein the one or more trenches are filled with the conductive material that is deposited such that the conductive layer is formed. 9 . An integrated circuit, comprising: a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising: a pair of electrodes laterally separated from each other; and a flexible membrane spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, wherein at least some of the plurality of circuit elements define a capacitance measurement circuit, wherein said electrodes are conductively coupled to the capacitance measurement circuit that comprises a sigma/delta capacitance-to-digital converter.

Assignees

Inventors

Classifications

  • of electrodes ohmically coupled to a semiconductor · CPC title

  • Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

  • MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title

  • Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title

  • Devices controlled by mechanical forces, e.g. pressure · CPC title

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What does patent US2016377497A1 cover?
Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe fiel…
Who is the assignee on this patent?
Ams Int Ag
What technology area does this patent fall under?
Primary CPC classification G01L9/0073. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Dec 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).