Glass substrate for high-frequency device and circuit board for high-frequency device

US12037283B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12037283-B2
Application numberUS-202117174615-A
CountryUS
Kind codeB2
Filing dateFeb 12, 2021
Priority dateSep 13, 2016
Publication dateJul 16, 2024
Grant dateJul 16, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO 2 ; 0 to 15% of Al 2 O 3 ; 13 to 23% of B 2 O 3 ; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

First claim

Opening claim text (preview).

The invention claimed is: 1. A glass substrate for a high-frequency device, the glass comprising, in terms of mole percent on the basis of oxides: 40 to 75% of SiO 2 ; 0 to 15% of Al 2 O 3 ; 13 to 23% of B 4 O 3 ; 2.5 to 11% of MgO; and 3 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less. 2. The glass substrate according to claim 1 , having a content of Fe, in terms of Fe 2 O 3 , of 0.012% or less in terms of mole percent on the basis of oxides. 3. The glass substrate according to claim 1 , having a total content of Al 2 O 3 and B 2 O 3 in the range of 24-38% in terms of mole percent on the basis of oxides. 4. The glass substrate according to claim 1 , wherein the total content of alkali metal oxides is in the range of 0.001-0.1%. 5. The glass substrate according to claim 1 , having a molar ratio represented by Al 2 O 3 /(Al 2 O 3 +B 2 O 3 ) in the range of 0-0.45, in terms of mole percent on the basis of oxides. 6. The glass substrate according to claim 1 , wherein the alkali metal oxides has a molar ratio represented by Na 2 O/(Na 2 O+K 2 O) in the range of 0.01-0.99. 7. The glass substrate according to claim 1 , which is amorphous. 8. The glass substrate according to claim 1 , having a β-OH value in the range of 0.05-0.6 mm −1 . 9. The glass substrate according to claim 1 , having a relative permittivity at 35 GHz of 10 or less. 10. The glass substrate according to claim 1 , having an average thermal expansion coefficient over the range of from 50° C. to 350° C. in the range of 3-15 ppm/° C. 11. The glass substrate according to claim 1 , having a Young's modulus of 40 GPa or higher. 12. The glass substrate according to claim 1 , having a porosity of 0.1% or less. 13. The glass substrate according to claim 1 , having a transmittance at 350-nm wavelength of 50% or higher. 14. The glass substrate according to claim 1 , having a thickness in the range of 0.05-1 mm and a substrate area in the range of 225-10,000 cm 2 . 15. A circuit board for a high-frequency device in which high-frequency signals having a frequency of 10 GHz or more is processed, the circuit board comprising: the glass substrate according to claim 1 ; and a wiring layer formed on the main surface of the glass substrate, wherein the circuit board has a transmission loss at 35 GHz of 1 dB/cm or less.

Assignees

Inventors

Classifications

  • by the overflow downdraw fusion process; Isopipes therefor · CPC title

  • Forming {molten} glass coated with coloured layers; {Forming molten glass of different compositions or layers; Forming molten glass comprising reinforcements or inserts} · CPC title

  • C03B19/14Primary

    by gas- {or vapour-} phase reaction processes · CPC title

  • of glass sheets · CPC title

  • Dielectric details, e.g. changing the dielectric material around a transmission line · CPC title

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What does patent US12037283B2 cover?
A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO 2 ; 0 to 15% of Al 2 O 3 ; 13 to 23% of B 2 O 3 ; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in te…
Who is the assignee on this patent?
Agc Inc
What technology area does this patent fall under?
Primary CPC classification C03B19/14. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 16 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).