Glass substrate, liquid crystal antenna and high-frequency device
US-2023163453-A1 · May 25, 2023 · US
US12037283B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12037283-B2 |
| Application number | US-202117174615-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2021 |
| Priority date | Sep 13, 2016 |
| Publication date | Jul 16, 2024 |
| Grant date | Jul 16, 2024 |
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A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO 2 ; 0 to 15% of Al 2 O 3 ; 13 to 23% of B 2 O 3 ; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
Opening claim text (preview).
The invention claimed is: 1. A glass substrate for a high-frequency device, the glass comprising, in terms of mole percent on the basis of oxides: 40 to 75% of SiO 2 ; 0 to 15% of Al 2 O 3 ; 13 to 23% of B 4 O 3 ; 2.5 to 11% of MgO; and 3 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less. 2. The glass substrate according to claim 1 , having a content of Fe, in terms of Fe 2 O 3 , of 0.012% or less in terms of mole percent on the basis of oxides. 3. The glass substrate according to claim 1 , having a total content of Al 2 O 3 and B 2 O 3 in the range of 24-38% in terms of mole percent on the basis of oxides. 4. The glass substrate according to claim 1 , wherein the total content of alkali metal oxides is in the range of 0.001-0.1%. 5. The glass substrate according to claim 1 , having a molar ratio represented by Al 2 O 3 /(Al 2 O 3 +B 2 O 3 ) in the range of 0-0.45, in terms of mole percent on the basis of oxides. 6. The glass substrate according to claim 1 , wherein the alkali metal oxides has a molar ratio represented by Na 2 O/(Na 2 O+K 2 O) in the range of 0.01-0.99. 7. The glass substrate according to claim 1 , which is amorphous. 8. The glass substrate according to claim 1 , having a β-OH value in the range of 0.05-0.6 mm −1 . 9. The glass substrate according to claim 1 , having a relative permittivity at 35 GHz of 10 or less. 10. The glass substrate according to claim 1 , having an average thermal expansion coefficient over the range of from 50° C. to 350° C. in the range of 3-15 ppm/° C. 11. The glass substrate according to claim 1 , having a Young's modulus of 40 GPa or higher. 12. The glass substrate according to claim 1 , having a porosity of 0.1% or less. 13. The glass substrate according to claim 1 , having a transmittance at 350-nm wavelength of 50% or higher. 14. The glass substrate according to claim 1 , having a thickness in the range of 0.05-1 mm and a substrate area in the range of 225-10,000 cm 2 . 15. A circuit board for a high-frequency device in which high-frequency signals having a frequency of 10 GHz or more is processed, the circuit board comprising: the glass substrate according to claim 1 ; and a wiring layer formed on the main surface of the glass substrate, wherein the circuit board has a transmission loss at 35 GHz of 1 dB/cm or less.
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