Organic light-emitting diode

US12035560B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12035560-B2
Application numberUS-202016966246-A
CountryUS
Kind codeB2
Filing dateJun 2, 2020
Priority dateAug 1, 2019
Publication dateJul 9, 2024
Grant dateJul 9, 2024

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The present disclosure relates to an organic light-emitting diode. The organic light-emitting diode includes a substrate, an anode layer, an organic functional layer, a cathode layer, and a cover layer that are sequentially stacked from bottom to top.

First claim

Opening claim text (preview).

What is claimed is: 1. An organic light-emitting diode, comprising: a substrate; an anode layer disposed on the substrate; an organic functional layer disposed on the anode layer; a cathode layer disposed on the organic functional layer; and a cover layer disposed on the cathode layer; wherein the cover layer comprises a perovskite-type compound, a material of the perovskite-type compound is selected from the group consisting of ABX 3 -type compounds, carbazole derivatives, diphenylfuran derivatives, aromatic amine derivatives, and triazines derivatives, and in the ABX 3 -type compounds: X is selected from oxygen, A is selected from the group consisting of divalent elements magnesium, calcium, strontium, barium, and lead, and B is selected from the group consisting of tetravalent elements titanium, silicon, and iron; or X is selected from halogen, A is selected from the group consisting of monovalent alkali metal, aromatic amine ion, and fatty ammonium ion, and B is selected from the group consisting of divalent alkaline earth metal, zinc, germanium, tin, lead, iron, cobalt, copper, nickel, manganese, palladium, cadmium, germanium, and europium; or X is selected from the group consisting of fluorine and chlorine, A is selected from the group consisting of rubidium and cesium, and B is selected from the group consisting of tetravalent element titanium, silicon, and iron. 2. The organic light-emitting diode according to claim 1 , wherein the organic light-emitting diode further comprises a light out-coupling layer disposed between the cathode layer and the cover layer. 3. The organic light-emitting diode according to claim 2 , wherein a material of the light out-coupling layer is selected from the group consisting of ABX 3 -type compounds, carbazole derivatives, diphenylfuran derivatives, aromatic amine derivatives, and triazine derivatives. 4. The organic light-emitting diode according to claim 3 , wherein in the ABX 3 -type compounds, X is selected from oxygen, A is selected from the group consisting of divalent elements magnesium, calcium, strontium, barium, and lead, and B is selected from the group consisting of tetravalent elements titanium, silicon, and iron; or X is selected from halogen, A is selected from the group consisting of monovalent alkali metal, aromatic amine ion, and fatty ammonium ion, and B is selected from the group consisting of divalent alkaline earth metal, zinc, germanium, tin, lead, iron, cobalt, copper, nickel, manganese, palladium, cadmium, germanium, and europium; or X is selected from the group consisting of fluorine and chlorine, A is selected from the group consisting of rubidium and cesium, and B is selected from the group consisting of tetravalent element titanium, silicon, and iron. 5. The organic light-emitting diode according to claim 1 , wherein the cover layer comprises an A n A′ 1-n BX 3 -type compound; wherein A and A′ are independently selected from the group consisting of different alkali metals and n is a decimal of 0-1; X is selected from oxygen and B is selected from the group consisting of tetravalent element titanium, silicon, and iron; or X is selected from halogen and B is selected from the group consisting of divalent alkaline earth metal, zinc, germanium, tin, lead, iron, cobalt, copper, nickel, manganese, palladium, cadmium, germanium, and europium; or X is selected from fluorine or chlorine, and B is selected from divalent alkaline earth metals, zinc, germanium, tin, lead, iron, cobalt, copper, nickel, manganese, palladium, cadmium, germanium, and europium. 6. The organic light-emitting diode according to claim 1 , wherein the cover layer comprises any one of CsPbCl 3 , MgSiO 3 , CH 3 NH 3 PbCl 3 , Cs 0.9 Rb 0.1 PbCl 3 , Cs 0.8 Rb 0.2 PbCl 3 , Cs 0.7 Rb 0.3 PbCl 3 , Cs 0.6 Rb 0.4 PbCl 3 , Cs 0.5 Rb 0.5 PbCl 3 , Cs 0.4 Rb 0.6 PbCl 3 , CsPbF 3 , NaSnF 3 , KSnF 3 , RbSnF 3 , or CsSnF 3 . 7. The organic light-emitting diode according to claim 1 , wherein a band gap of the perovskite-type compound is greater than 2.8 eV; and/or the perovskite-type compound mainly absorbs ultraviolet light having a wavelength ranging less than 400 nm, and an extinction coefficient at 450 nm is less than 0.1. 8. The organic light-emitting diode according to claim 1 , wherein the organic functional layer comprises at least one light-emitting layer, the light-emitting layer comprises an organic light-emitting material or a quantum dot light-emitting material; and wherein the organic light-emitting material is selected from the group consisting of a singlet emitter, a triplet emitter, or thermally activated delayed fluorescent light-emitting material. 9. The organic light-emitting diode according to claim 1 , wherein the perovskite-type compound is deposited by a one-step precursor deposition, a two-step deposition, a dual-source vapor deposition, or a vapor-phase assisted solution process. 10. The organic light-emitting diode according to claim 1 , wherein a thickness of the perovskite-type compound ranges from 10 nm to 300 nm.

Assignees

Inventors

Classifications

  • Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

  • using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering · CPC title

  • comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom · CPC title

  • comprising only nitrogen as heteroatom (H10K85/652 takes precedence) · CPC title

  • Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US12035560B2 cover?
The present disclosure relates to an organic light-emitting diode. The organic light-emitting diode includes a substrate, an anode layer, an organic functional layer, a cathode layer, and a cover layer that are sequentially stacked from bottom to top.
Who is the assignee on this patent?
Wuhan China Star Optoelectronics Semiconductor Display Tech Co Ltd, Guangzhou Chinaray Optoelectronic Mat Ltd
What technology area does this patent fall under?
Primary CPC classification H10K50/844. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 09 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).