Semiconductor device including oxide semiconductor layer

Patent metadata

Field	Value
Publication number	US-12034047-B2
Application number	US-202218056954-A
Country	US
Kind code	B2
Filing date	Nov 18, 2022
Priority date	Jun 10, 2019
Publication date	Jul 9, 2024
Grant date	Jul 9, 2024

Abstract

Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a metal oxide layer disposed on the substrate;
a gate structure disposed on the metal oxide layer, the gate structure including an insulating material layer and a gate electrode disposed on the insulating material layer, the insulating material layer including a ferroelectric material layer;
an interlayer insulating layer covering the gate structure and disposed on the metal oxide layer; and
a contact disposed in the interlayer insulating layer and connected to the metal oxide layer,
wherein the gate structure includes gate spacers defining a gate trench,
wherein the ferroelectric material layer extends along sidewalls and a bottom surface of the gate trench,
wherein a top surface of the ferroelectric material layer is lower than a top surface of the gate spacers, and
the contact is in direct contact with the gate spacers.

2. The semiconductor device of claim 1 , wherein the insulating material layer includes a first paraelectric material layer being in contact with the metal oxide layer, and the ferroelectric material layer disposed on the first paraelectric material layer.

3. The semiconductor device of claim 2 , wherein the insulating material layer further includes a second paraelectric material layer disposed on the ferroelectric material layer.

4. The semiconductor device of claim 3 , wherein the second paraelectric material layer includes at least one of an aluminum oxide layer and a silicon oxide layer.

5. The semiconductor device of claim 1 , wherein the gate structure further includes a capping pattern on the gate electrode.

6. The semiconductor device of claim 1 , further comprising a source/drain pattern being in contact with the metal oxide layer and disposed on at least one side of the gate structure,
wherein at least a portion of the source/drain pattern protrudes upward from a top surface of the metal oxide layer, and
the contact is connected to the source/drain pattern.

7. The semiconductor device of claim 6 , wherein the source/drain pattern includes a bottom portion extending along a top surface of the substrate and a sidewall portion protruding from the bottom portion and extending along a sidewall of the gate structure.

8. The semiconductor device of claim 6 , wherein the metal oxide layer includes a source/drain recess formed on at least one side of the gate structure, and
wherein a portion of the source/drain pattern fills the recess.

9. A semiconductor device comprising:
a substrate;
a metal oxide layer disposed on the substrate;
a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer;
a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween, and each of the gate structures including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern; and
a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern,
wherein the source/drain pattern is in contact with the gate spacers,
wherein the insulating material layer includes a paraelectric material layer and a ferroelectric material layer on the metal oxide layer, and
wherein the insulating material layer is in direct contact with the gate spacers and does not overlap the gate spacers in a direction perpendicular to a top surface of the substrate.

10. The semiconductor device of claim 9 , wherein the source/drain pattern includes sidewall portions extending along sidewalls of the gate structures and a bottom portion extending along a top surface of the substrate.

11. The semiconductor device of claim 9 , wherein the source/drain pattern includes a lower source/drain pattern and an upper source/drain pattern on the lower source/drain pattern, and
the lower source/drain pattern and the upper source/drain pattern have at least one of different materials and different shapes from each other.

12. The semiconductor device of claim 9 , wherein the metal oxide layer includes one of In—Ga-based oxide, In—Zn-based oxide and In—Ga—Zn-based oxide.

13. The semiconductor device of claim 9 , wherein the source/drain pattern includes at least one of silicon (Si), silicon germanium (SiGe), silicon carbide (SiC), germanium (Ge), indium tin oxide (ITO), indium zinc oxide (IZO) and InGaSiO.

14. The semiconductor device of claim 9 , wherein the gate spacers define a gate trench, and
wherein the ferroelectric material layer extends along sidewalls and a bottom surface of the gate trench.

15. A semiconductor device comprising:
a silicon substrate;
a buffer insulating layer disposed on the silicon substrate, the buffer insulating layer extending along a top surface of the silicon substrate;
a metal oxide layer disposed on the buffer insulating layer, the metal oxide layer including In—Ga—Zn-based oxide;
a plurality of gate structures spaced apart from each other, each of the gate structures including a gate electrode, an insulating material layer and a capping pattern on the gate electrode and the insulating material layer, and the insulating material layer includes a paraelectric material layer and a ferroelectric material layer sequentially stacked on the metal oxide layer;
a source/drain pattern disposed between the gate structures, the source/drain pattern being in contact with the metal oxide layer and including sidewall portions extending along sidewalls of the gate structures and a bottom portion extending along the top surface of the silicon substrate;
an interlayer insulating layer covering the source/drain pattern and the gate structures and including a contact hole exposing at least a portion of the source/drain pattern; and
a contact filling the contact hole and connected to the source/drain pattern.

16. The semiconductor device of claim 15 , wherein the source/drain pattern includes at least one of indium tin oxide (ITO), indium zinc oxide (IZO) and InGaSiO.

17. The semiconductor device of claim 15 , wherein the metal oxide layer includes a source/drain recess formed between two adjacent ones of the gate structures, and
a portion of the source/drain pattern fills the source/drain recess.

18. The semiconductor device of claim 17 , wherein the two adjacent ones of the gate structures include gate spacers, and
wherein a portion of the source/drain recess extends along bottom surfaces of the gate spacers.

19. The semiconductor device of claim 15 , wherein each of the gate structures includes gate spacers defining a gate trench, and
wherein each of the paraelectric material layer and the ferroelectric material layer extends along sidewalls and a bottom surface of the gate trench.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Song Woo Bin
• Lee Sang Woo
• Cho Min Hee

Classifications

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/689

  having ferroelectric layers · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D64/033

  comprising ferroelectric layers · CPC title