Magnetic memory device including magnetoresistance effect element

Patent metadata

Field	Value
Publication number	US-12029136-B2
Application number	US-202117202151-A
Country	US
Kind code	B2
Filing date	Mar 15, 2021
Priority date	Sep 16, 2020
Publication date	Jul 2, 2024
Grant date	Jul 2, 2024

Abstract

According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

First claim

What is claimed is:

1. A magnetic memory device comprising:
a magnetoresistance effect element comprising:
a first magnetic layer having a fixed magnetization direction;
a second magnetic layer having a fixed magnetization direction;
a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a variable magnetization direction;
a first nonmagnetic layer provided between the first magnetic layer and the third magnetic layer; and
a second nonmagnetic layer provided between the second magnetic layer and the third magnetic layer; and
a two-terminal switching element connected in series to the magnetoresistance effect element, being configured to change from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals thereof is higher than or equal to a threshold voltage,
wherein:
the first nonmagnetic layer is an insulating layer,
the second nonmagnetic layer is an insulating layer, and
a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer are parallel to each other.

2. The magnetic memory device of claim 1 , wherein the magnetoresistance effect element has a first resistance state in which a magnetization direction of the third magnetic layer is parallel to the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer and a second resistance state in which the magnetization direction of the third magnetic layer is antiparallel to the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer.

3. The magnetic memory device of claim 2 , wherein the first resistance state and the second resistance state are set according to a direction of a current flowing through the magnetoresistance effect element.

4. The magnetic memory device of claim 2 , wherein the second resistance state has a resistance higher than that of the first resistance state.

5. The magnetic memory device of claim 1 , wherein:
the magnetoresistance effect element further comprises:
a fourth magnetic layer having a fixed magnetization direction; and
a fifth magnetic layer having a fixed magnetization direction,

a magnetization direction of the fourth magnetic layer and a magnetization direction of the fifth magnetic layer are antiparallel to the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer, and
the first, second and third magnetic layers are provided between the fourth magnetic layer and the fifth magnetic layer.

6. The magnetic memory device of claim 5 , wherein the magnetoresistance effect element further comprises:
a first intermediate layer provided between the first magnetic layer and the fourth magnetic layer, and formed of a metal material; and
a second intermediate layer provided between the second magnetic layer and the fifth magnetic layer, and formed of a metal material.

7. The magnetic memory device of claim 1 , wherein:
the first nonmagnetic layer corresponds to a first tunnel barrier layer, and
the second nonmagnetic layer corresponds to a second tunnel barrier layer.

8. The magnetic memory device of claim 1 , wherein:
the first nonmagnetic layer contains magnesium (Mg) and oxygen (O), and
the second nonmagnetic layer contains magnesium (Mg) and oxygen (O).

9. A magnetic memory device comprising:
a magnetoresistance effect element comprising:
a first magnetic layer having a fixed magnetization direction;
a second magnetic layer having a fixed magnetization direction;
a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a variable magnetization direction;
a first nonmagnetic layer provided between the first magnetic layer and the third magnetic layer; and
a second nonmagnetic layer provided between the second magnetic layer and the third magnetic layer; and
a two-terminal switching element connected in series to the magnetoresistance effect element, being configured to change from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals thereof is higher than or equal to a threshold voltage,
wherein:
the first nonmagnetic layer is an insulating layer,
the second nonmagnetic layer is an insulating layer,
the first nonmagnetic layer corresponds to a first tunnel barrier layer, and
the second nonmagnetic layer corresponds to a second tunnel barrier layer.

10. The magnetic memory device of claim 9 , wherein:
the first magnetic layer, the third magnetic layer and the first nonmagnetic layer constitute a first magnetoresistance effect element portion, and
the second magnetic layer, the third magnetic layer and the second nonmagnetic layer constitute a second magnetoresistance effect element portion.

11. The magnetic memory device of claim 10 , wherein an MR ratio of the first magnetoresistance effect element portion and an MR ratio of the second magnetoresistance effect element portion are different from each other.

12. The magnetic memory device of claim 9 , wherein each of the first, second and third magnetic layers has a perpendicular magnetization.

13. The magnetic memory device of claim 9 , wherein the magnetoresistance effect element is a spin transfer torque (STT) magnetoresistance effect element.

14. The magnetic memory device of claim 9 , further comprising:
a first wiring line extending along a first direction; and
a second wiring line extending along a second direction intersecting the first direction,
wherein the magnetoresistance effect element and the switching element are connected in series between the first wiring line and the second wiring line.

15. A magnetic memory device comprising:
a magnetoresistance effect element comprising:
a first magnetic layer having a fixed magnetization direction;
a second magnetic layer having a fixed magnetization direction;
a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a variable magnetization direction;
a first nonmagnetic layer provided between the first magnetic layer and the third magnetic layer; and
a second nonmagnetic layer provided between the second magnetic layer and the third magnetic layer; and
a two-terminal switching element connected in series to the magnetoresistance effect element, being configured to change from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals thereof is higher than or equal to a threshold voltage,
wherein:
the first nonmagnetic layer is an insulating layer,
the second nonmagnetic layer is an insulating layer,
the first nonmagnetic layer contains magnesium (Mg) and oxygen (O), and
the second nonmagnetic layer contains magnesium (Mg) and oxygen (O).

16. The magnetic memory device of claim 15 , wherein:
the first magnetic layer, the third magnetic layer and the first nonmagnetic layer constitute a first magnetoresistance effect element portion, and
the second magnetic layer, the third magnetic layer and the second nonmagnetic layer constitute a second magnetoresistance effect element portion.

17. The magnetic memory device of claim 16 , wherein an MR ratio of the first magnetoresistance effect element portion and an MR ratio of the second magnetoresistance effect element portion are different from each other.

18. The magnetic memory device of claim 15

Assignees

• Kioxia Corp

Inventors

• ITAI Shogo
• Daibou Tadaomi
• Ito Yuichi
• Komatsu Katsuyoshi

Classifications

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10B61/10

  comprising components having two electrodes, e.g. diodes or MIM elements · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title