Sandwiched XBAR for third harmonic operation

Patent metadata

Field	Value
Publication number	US-12028044-B2
Application number	US-202017133440-A
Country	US
Kind code	B2
Filing date	Dec 23, 2020
Priority date	Sep 21, 2020
Publication date	Jul 2, 2024
Grant date	Jul 2, 2024

Abstract

A filter device has a first piezoelectric plate spanning a first and second cavity of a substrate. A first and second interdigital transducer (IDT) are on a front surface of the first piezoelectric plate over the first and second cavity. A dielectric layer is bonded to the first piezoelectric plate and covers the first IDT and second IDT. A second piezoelectric plate is bonded to a front surface of the dielectric layer over the first cavity and the second cavity. A second dielectric layer is formed on a front surface of the second piezoelectric plate over the first cavity but not over the second cavity. The thickness of the dielectric layer, the first piezoelectric plate and the second piezoelectric plate can be selected to tune a shunt resonator over the first cavity and a series resonator over the second cavity to function at 15 GHz.

First claim

The invention claimed is:

1. A method of forming a filter device comprising:
bonding a first piezoelectric layer to a substrate either directly or via one or more intermediate layers of the substrate, the first piezoelectric layer disposed over a location in the substrate for a first cavity and a location in the substrate for a second cavity;
forming a first interdigital transducer (IDT) including interleaved fingers on the first piezoelectric layer over the location for the first cavity;
forming a second IDT including interleaved fingers on the first piezoelectric layer over the location for the second cavity;
forming a first dielectric layer on a surface of the first piezoelectric layer, the first dielectric layer covering the first IDT and the second IDT;
bonding a second piezoelectric layer to a surface of the first dielectric layer, the second piezoelectric layer disposed over the location for the first cavity and the location for the second cavity;
forming a second dielectric layer directly on a surface of the second piezoelectric layer over the location for the first cavity not formed over the location for the second cavity, thereby resulting in a first resonator formed over the location of the first cavity including the second dielectric layer and a second resonator formed over the location of the second cavity that does not include the second dielectric layer, wherein the second dielectric layer changes the frequency of the first resonator as compared with the second resonator; and
forming the first cavity within the substrate at the location for the first cavity and forming the second cavity within the substrate at the location for the second cavity.

2. The method of claim 1 , wherein:
the first and second dielectric layers are each one of Al 2 O 3 or SiO 2 ;
the first piezoelectric layer and the second piezoelectric layer have a same thickness;
forming the first and second IDTs includes masking and etching a layer of conductor material; and
forming the second dielectric layer includes masking and etching the second dielectric layer.

3. The method of claim 2 , further comprising:
planarizing the first piezoelectric layer after bonding the first piezoelectric layer to the substrate either directly or via the one or more intermediate layers;
planarizing the first dielectric layer after forming the first dielectric layer on the surface of the first piezoelectric layer; and
planarizing the second piezoelectric layer after bonding the second piezoelectric layer to the surface of the first dielectric layer.

4. The method of claim 1 , wherein forming the first cavity and the second cavity occurs before or after bonding the first piezoelectric layer to the substrate either directly or via the one or more intermediate layers.

5. The method of claim 4 , wherein:
the first resonator is a first shunt resonator of an XBAR filter that has the first piezoelectric layer, the first IDT, the first dielectric layer, the second piezoelectric layer, and the second dielectric layer; and
the second resonator is a second series resonator of an XBAR filter that has the first piezoelectric layer, the second IDT, the first dielectric layer, and the second piezoelectric layer, but not the second dielectric layer.

6. The method of claim 5 , wherein the first shunt resonator and the second series resonator are configured such that a respective radio frequency signal applied to the first and second IDTs excites respective different frequency third harmonic shear acoustic modes in the first shunt resonator and the second series resonator.

7. The method of claim 6 , wherein a thickness of the second dielectric layer is selected to tune the respective different frequency third harmonic shear acoustic mode in the first shunt resonator.

8. The method of claim 1 , wherein the first and second piezoelectric layers are both either lithium niobate or lithium tantalate.

9. The method of claim 1 , further comprising forming one or more openings through the first and second piezoelectric layers, through the first and second dielectric layers, and to the substrate; and
forming the first and second cavities includes etching the first and second cavities through the openings.

Assignees

• Murata Manufacturing Co

Inventors

• Garcia Bryant
• Adhikari Pintu
• Guyette Andrew

Classifications

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H9/02228 Primary

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H9/02157

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title

• H03H9/605

  consisting of a ladder configuration · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title