Solar cells with differentiated p-type and n-type region architectures

Patent metadata

Field	Value
Publication number	US-12009441-B2
Application number	US-202318099802-A
Country	US
Kind code	B2
Filing date	Jan 20, 2023
Priority date	Sep 30, 2016
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.

First claim

What is claimed is:

1. A solar cell comprising:
a substrate having a light-receiving surface and a back surface, wherein the substrate comprises a first portion and a second portion at the back surface of the substrate, and the first portion includes a first doped region of a first conductivity type;
a layer comprising a dopant over the first doped region;
a first insulator layer over the back surface of the substrate, wherein a first portion of the first insulator layer is over the layer comprising the dopant and the first doped region of the first conductivity type, and wherein a second portion of the first insulator layer is on the second portion of the substrate;
a first layer comprising silicon on the first insulator layer, wherein a first portion of the first layer comprising silicon is over the first portion of the first insulator layer, and wherein a second portion of the first layer comprising silicon is a second doped region of a second conductivity type that is over the second portion of the first insulator layer, such that the first doped region is formed in the first portion of the substrate at the back surface and the second doped region is formed over the second portion of the back surface of the substrate, wherein the second doped region is not laterally overlapping with the first doped region, and wherein a bottommost surface of the second doped region is vertically spaced apart from an uppermost surface of the first doped region;
a first conductive contact over the first doped region; and
a second conductive contact over the second doped region.

2. The solar cell of claim 1 , wherein the substrate comprises a monocrystalline silicon substrate.

3. The solar cell of claim 1 , wherein the first conductivity type is P-type and the second conductivity type is N-type.

4. The solar cell of claim 1 , wherein the first insulator layer comprises a tunnel oxide.

5. The solar cell of claim 1 , further comprising a contact opening between the first doped region and the first conductive contact, wherein the contact opening allows for an electrical connection between the first doped region and the first conductive contact.

6. The solar cell of claim 1 , wherein the first layer comprising silicon comprises polysilicon.

7. The solar cell of claim 1 , further comprising a second layer comprising silicon on the light-receiving surface.

8. The solar cell of claim 7 , wherein the second layer comprising silicon comprises polysilicon.

9. A solar cell comprising:
a substrate having a light-receiving surface and a back surface, wherein the substrate comprises a first portion and a second portion at the back surface of the substrate and the first portion includes a first doped region of a first conductivity type;
a layer comprising a dopant over the first doped region;
a first insulator layer over the back surface of the substrate, wherein a first portion of the first insulator layer is over the layer comprising the dopant and the first doped region of the first conductivity type, and wherein a second portion of the first insulator layer is on the second portion of the substrate;
a first layer comprising silicon over the first insulator layer, the first layer comprising silicon comprising a first portion and a second portion, and the first portion of the first layer comprising silicon over the first portion of the first insulator layer, wherein a second portion of the first layer comprising silicon is a second doped region of a second conductivity type that is over the second portion of the of the first insulator layer and that is separate from the first portion of the first layer comprising silicon, such that the first doped region is formed in the first portion of the substrate at the back surface and the second doped region is formed over the second portion of the back surface of the substrate, wherein the second doped region is not laterally overlapping with the first doped region, and wherein a bottommost surface of the second doped region is vertically spaced apart from an uppermost surface of the first doped region;
a first conductive contact over the first doped region; and
a second conductive contact over the second doped region.

10. The solar cell of claim 9 , wherein the substrate comprises a monocrystalline silicon substrate.

11. The solar cell of claim 9 , wherein the first conductivity type is P-type and the second conductivity type is N-type.

12. The solar cell of claim 9 , wherein the first insulator layer comprises a tunnel oxide.

13. The solar cell of claim 9 , further comprising a contact opening between the first doped region and the first conductive contact, wherein the contact opening allows for an electrical connection between the first doped region and the first conductive contact.

14. The solar cell of claim 9 , wherein the first layer comprising silicon comprises polysilicon.

15. The solar cell of claim 9 , further comprising a second layer comprising silicon on the light-receiving surface.

16. The solar cell of claim 15 , wherein the second layer comprising silicon comprises polysilicon.

Assignees

• Maxeon Solar Pte Ltd

Inventors

• Rim Seung Bum
• Johnson Michael C

Classifications

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/164

  Polycrystalline semiconductors · CPC title

• H10F77/707

  of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate · CPC title

• H10F10/16 Primary

  Photovoltaic cells having only PN heterojunction potential barriers · CPC title

• H10F77/703

  of the semiconductor bodies, e.g. textured active layers · CPC title