Method of manufacturing a hybrid emitter all back contact solar cell

Patent metadata

Field	Value
Publication number	US-9564551-B2
Application number	US-201615067960-A
Country	US
Kind code	B2
Filing date	Mar 11, 2016
Priority date	Dec 19, 2012
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

First claim

What is claimed is:

1. A method of manufacturing an all back contact solar cell, the method comprising:
forming a thin dielectric layer on a single crystalline silicon substrate;
forming a first emitter of the solar cell on the thin dielectric layer, wherein the thin dielectric layer is between the single crystalline silicon substrate and the first emitter, the first emitter comprising polycrystalline silicon doped to have a first polarity; and
forming a second emitter and a third emitter of the solar cell in the single crystalline silicon substrate, the second emitter and the third emitter comprising single crystalline silicon doped to have a second polarity opposite the first polarity, the first emitter being formed between the second and third emitters, the second and third emitters being formed starting from opposing ends of the first emitter.

2. The method of claim 1 , further comprising:
forming a first metal contact connected to the first emitter on a backside of the solar cell, the backside being opposite a front side of the solar cell that faces the sun during normal operation;
forming a second metal contact connected to the second emitter on the backside of the solar cell; and
forming a third metal contact connected to the third emitter on the backside of the solar cell.

3. The method of claim 1 , wherein the thin dielectric layer comprises silicon dioxide and is formed directly on a surface of the single crystalline silicon substrate.

4. The method of claim 2 , further comprising:
forming a first layer of material on the first emitter and the backside surface of the single crystalline silicon substrate, wherein the first metal contact connects to the first emitter through the first layer of material but not through the thin dielectric layer.

5. The method of claim 4 , wherein the second metal contact connects to the second emitter through the first layer of material and the thin dielectric layer.

6. The method of claim 1 , wherein the first emitter is a P-type doped emitter, the second emitter is an N-type doped emitter, and the single crystalline silicon substrate is doped with an N-type dopant.

7. A method of manufacturing an all back contact a solar cell, the method comprising:
forming a thin dielectric layer on a single crystalline silicon substrate;
forming a first emitter of the solar cell on the thin dielectric layer, the first emitter comprising doped polycrystalline silicon having a first doping type;
forming a second emitter of the solar cell in the single crystalline silicon substrate, the second emitter comprising doped single crystalline silicon having a second doping type;
forming a third emitter of the solar cell in the single crystalline silicon substrate, the third emitter comprising doped single crystalline silicon having the second doping type,
wherein the first emitter is formed between the second and third emitters, the second and third emitters are formed starting from opposing ends of the first emitter, and the thin dielectric layer is formed between the single crystalline silicon substrate and the first emitter; and
wherein the first doping type is opposite to the second doping type.

8. The method of claim 7 , wherein the first emitter is doped with P-type dopants, the second emitter is doped with N-type dopants, and the single crystalline silicon substrate is doped with N-type dopants.

9. The method of claim 7 , wherein the thin dielectric layer comprises silicon dioxide.

10. The method of claim 7 , further comprising:
forming a metal contact that is connected to the second emitter through a contact hole in the thin dielectric layer.

Assignees

• Sunpower Corp

Inventors

• Loscutoff Paul
• Rim Seung

Classifications

• H10F77/219 Primary

  Arrangements for electrodes of back-contact photovoltaic cells · CPC title

• H10F10/146 Primary

  Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

• H01L31/022458

  Electricity · mapped topic

• H01L31/182 Primary

  Electricity · mapped topic

• H01L31/03682

  Electricity · mapped topic