Hybrid emitter all back contact solar cell

Patent metadata

Field	Value
Publication number	US-9312406-B2
Application number	US-201213720721-A
Country	US
Kind code	B2
Filing date	Dec 19, 2012
Priority date	Dec 19, 2012
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

First claim

What is claimed is:

1. An all back contact solar cell comprising:
a single crystalline silicon substrate;
a thin dielectric layer formed on a backside surface of the single crystalline silicon substrate;
a first emitter of the solar cell, the first emitter of the solar cell being formed on the thin dielectric layer and comprising polycrystalline silicon doped to have a first polarity, wherein the thin dielectric layer is between the single crystal silicon substrate and the first emitter;
a second emitter and a third emitter of the solar cell, the second and third emitters of the solar cell being formed in the single crystalline silicon substrate and comprising single crystalline silicon doped to have a second polarity opposite the first polarity, the first emitter being formed between the second and third emitters, the second and third emitters being formed starting from opposing ends of the first emitter;
a first metal contact connected to the first emitter on a backside of the solar cell, the backside being opposite a front side of the solar cell that faces the sun during normal operation;
a second metal contact connected to the second emitter on the backside of the solar cell; and
a third metal contact connected to the third emitter on the backside of the solar cell.

2. The solar cell of claim 1 wherein the thin dielectric layer comprises silicon dioxide formed directly on the backside surface of the single crystalline silicon substrate.

3. The solar cell of claim 1 further comprising:
a first layer of material formed on the first emitter and the backside surface of the single crystalline silicon substrate, and wherein the first metal contact connects to the first emitter through the first layer of material but not through the thin dielectric layer.

4. The solar cell of claim 3 wherein the second metal contact connects to the second emitter through the first layer of material and the thin dielectric layer.

5. The solar cell of claim 1 wherein the first emitter is a P-type doped emitter, the second emitter is an N-type doped emitter, and the single crystalline silicon substrate is doped with an N-type dopant.

6. The solar cell of claim 1 wherein a total area of the first emitter and other emitters of the solar cell comprising polycrystalline silicon covers at least 80% of a total area of the backside surface of the single crystalline silicon wafer.

7. A solar cell comprising:
a single crystalline silicon substrate;
a thin dielectric formed on a backside surface of the single crystalline silicon substrate;
a first emitter of the solar cell, wherein the first emitter is on the thin dielectric and comprises doped polycrystalline silicon, wherein the thin dielectric layer is between the single crystal silicon substrate and the first emitter;
a second emitter of the solar cell, the second emitter comprising doped single crystalline silicon and formed in the single crystalline silicon substrate;
a third emitter of the solar cell, the third emitter comprising doped single crystalline silicon and formed in the single crystalline silicon substrate,
wherein the first emitter is formed between the second and third emitters, the second and third emitters being formed starting from opposing ends of the first emitter.

8. The solar cell of claim 7 wherein the first emitter is doped with P-type dopants, the second emitter is doped with N-type dopants, and the single crystalline silicon substrate is doped with N-type dopants.

9. The solar cell of claim 7 wherein the thin dielectric comprises silicon dioxide.

10. The solar cell of claim 7 further comprising a metal contact that is connected to the second emitter through a contact hole in the thin dielectric layer.

11. The solar cell of claim 7 wherein the solar cell is an all back contact solar cell.

Assignees

• Loscutoff Paul
• Rim Seung
• Sunpower Corp

Inventors

• Loscutoff Paul
• Rim Seung

Classifications

• H10F77/219 Primary

  Arrangements for electrodes of back-contact photovoltaic cells · CPC title

• H10F10/146 Primary

  Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

• H10F77/122

  comprising only Group IV materials · CPC title

• H10F77/1642

  including only Group IV materials · CPC title

• H10F77/227

  for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts · CPC title