Direct graphene transfer and graphene-based devices

Patent metadata

Field	Value
Publication number	US-12006221-B2
Application number	US-202117546488-A
Country	US
Kind code	B2
Filing date	Dec 9, 2021
Priority date	Nov 17, 2017
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

A method of forming a functionalized device substrate is provided that includes the steps of: forming a conductive layer on a growth substrate; applying a polymeric layer to a device substrate, wherein a coupling agent couples the polymeric layer to the device substrate; coupling the polymeric layer to the conductive layer on the growth substrate; and peeling the growth substrate from the conductive layer.

First claim

What is claimed is:

1. A functionalized device substrate, comprising:
a substrate defining a surface;
a polyimide layer disposed over the surface of the substrate, wherein an aminosilane couples the polyimide layer to the surface; and
a graphene layer coupled to the polyimide layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq.

2. The device substrate of claim 1 , wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.

3. The device substrate of claim 1 , wherein the aminosilane is dispersed within the polyimide layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.

4. The device substrate of claim 1 , wherein the aminosilane is an aminosilane layer.

5. A functionalized device substrate, comprising:
a substrate defining a surface;
a polyimide layer disposed over the surface of the substrate, wherein an aminosilane couples the polyimide layer to the surface; and
a graphene layer coupled to the polyimide layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq, and wherein the graphene layer is as-pressed against the polyimide layer at a pressure of from about 150 psi to about 350 psi.

6. The device substrate of claim 5 , wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.

7. The device substrate of claim 5 , wherein the aminosilane is dispersed within the polyimide layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.

8. The device substrate of claim 5 , wherein the aminosilane is an aminosilane layer.

9. The device substrate of claim 5 , wherein the graphene layer is pressed against the polyimide layer at a temperature of from about 50° C. to about 200° C.

10. The device substrate of claim 5 , wherein the graphene layer is pressed against the polyimide layer at a temperature of from about 129° C. to about 190° C.

11. A functionalized device substrate, comprising:
a substrate defining a surface;
a polymer layer disposed over the surface of the substrate, wherein an aminosilane couples the polymer layer to the surface; and
a graphene layer coupled to the polymer layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq, and further wherein the polymer layer is composed of a polyimide or a polythiophene.

12. The device substrate of claim 11 , wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.

13. The device substrate of claim 11 , wherein the aminosilane is dispersed within the polymer layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.

14. The device substrate of claim 11 , wherein the aminosilane is an aminosilane layer.

15. The device substrate of claim 11 , wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.

16. The device substrate of claim 1 , wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.

17. The device substrate of claim 5 , wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.

Assignees

• Corning Inc
• Fundacio Inst De Ciencies Fotòniques Icfo
• Inst Catalana Recerca Estudis Avancats

Inventors

• Arliguie Therese Francoise
• Chang Theresa
• Martin-Francés Miriam Marchena
• Mazumder Prantik
• Pruneri Valerio
• Wagner Frederic Christian

Classifications

• C01B2204/22

  Electronic properties · CPC title

• B05D2505/50

  Polyimides · CPC title

• B05D2350/60

  Adding a layer before coating · CPC title

• B05D3/12

  by mechanical means · CPC title

• B05D1/005

  Spin coating · CPC title