Method of transferring graphene

Patent metadata

Field	Value
Publication number	US-9039886-B2
Application number	US-201213659355-A
Country	US
Kind code	B2
Filing date	Oct 24, 2012
Priority date	Feb 24, 2012
Publication date	May 26, 2015
Grant date	May 26, 2015

Abstract

A method of transferring graphene includes depositing graphene on a side of at least one metal substrate to provide a metal substrate-graphene layer, stacking a target substrate on a side of the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer, and exposing the stacked structure to an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate.

First claim

What is claimed is:

1. A method of transferring graphene, the method comprising:
depositing graphene on a side of a metal substrate to provide a metal substrate-graphene layer;
stacking a target substrate on the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer; and
passing the stacked structure through an electrolysis bath to etch the metal substrate and transfer the graphene onto the side of the target substrate.

2. The method as claimed in claim 1 , wherein:
the electrolysis bath includes electrodes including a positive (+) electrode and a negative (−) electrode, and a solution, and
when the stacked structure is passed through the electrolysis bath, a metal included in the metal substrate is oxidized to form a metal ion in the (+) electrode, and the formed metal ion is reduced and precipitated to a metal in the (−) electrode.

3. The method as claimed in claim 2 , wherein a voltage of about 0.001V to about 100V is applied to the electrodes.

4. The method as claimed in claim 1 , wherein the stacked structure is provided by stacking the target substrate on the metal substrate-graphene layer and passing the stacked target substrate and metal substrate-graphene layer through a roller device.

5. The method as claimed in claim 4 , wherein the stacking of the target substrate on the metal substrate-graphene layer includes at least one of:
forming a polymer binder film between the metal substrate-graphene layer and the target substrate, and
performing a heat treatment on the target substrate on the metal substrate-graphene layer.

6. The method as claimed in claim 5 , wherein:
the stacking of the target substrate on the metal substrate-graphene later includes forming the polymer binder film, and
the polymer binder film includes at least one selected from polystyrene, polyethylene glycol, poly(methyl methacrylate), polyvinylpyrrolidone, Nafion®, poly(acrylic acid) sodium, poly(diallyldimethyl ammonium chloride), and polyethylenimine.

7. The method as claimed in claim 5 , wherein:
the stacking of the target substrate on the metal substrate-graphene layer includes performing the heat treatment, and
the heat treatment is performed at a temperature of about 60° C. to about 200° C.

8. The method as claimed in claim 1 , wherein:
the depositing of graphene on the side of the metal substrate to provide the metal substrate-graphene layer includes depositing the graphene on at least one side of each of at least two metal substrates to provide at least two metal substrate-graphene layers;
the stacking of the target substrate on the metal substrate-graphene layer to provide the stacked structure includes stacking one target substrate between each of the at least two metal substrate-graphene layers to provide the stacked structure in which both sides of the target substrate face a graphene layer of one of the metal substrate-graphene layers; and
the passing of the stacked structure through the electrolysis bath transfers the graphene onto both sides of the target substrate.

9. The method as claimed in claim 1 , wherein:
the depositing of graphene on the side of the metal substrate to provide the metal substrate-graphene layer includes depositing the graphene on two sides of the metal substrate to provide a metal substrate-graphene layer having graphene on two sides;
the stacking of the target substrate on the metal substrate-graphene layer to provide the stacked structure includes stacking one target substrate on each side of the metal substrate-graphene layer to provide the stacked structure in which a facing side of each target substrate faces a graphene layer of one of the two sides of the metal substrate-graphene layer having graphene on two sides; and
the passing of the stacked structure through the electrolysis bath transfers the graphene onto the facing side of the each of the target substrates.

10. The method as claimed in claim 1 , further comprising, after transferring the graphene on at least one side of the target substrate:
stacking another target substrate on the graphene layer transferred onto the side of the target substrate.

11. The method as claimed in claim 1 , wherein the stacked structure is directed to pass through the electrolysis bath by a roller device.

12. The method as claimed in claim 1 , wherein the metal substrate includes at least one metal or alloy selected from Cu, Ni, Co, Fe, Pt, Au, Ru, Al, Cr, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr, brass, bronze, white brass, stainless steel, and Ge.

13. The method as claimed in claim 1 , wherein the target substrate includes at least one selected from a thermal release tape, a polyethylene terephthalate substrate, a polyimide substrate, a polyethylene naphthalate substrate, a polycarbonate substrate, a glass substrate, a silicon wafer, a porous inorganic or organic membrane, a metal-organic frame, an ion-exchange film, and a membrane electrode.

14. The method as claimed in claim 1 , further comprising:
cleaning the transferred graphene on the target substrate.

15. The method as claimed in claim 1 , wherein the graphene transferred to the target substrate has an electrical resistance of about 1 to about 10000 Ω/sq.

Assignees

• Gong Kuanping
• Ci Lijie
• Ahn Sung-Hee
• Park Jin-Seong
• Kim Byeong-Yeol
• Cheil Ind Inc

Inventors

• Gong Kuanping
• Ci Lijie
• Ahn Sung-Hee
• Park Jin-Seong
• Kim Byeong-Yeol

Classifications

• B32B38/10 Primary

  Removing layers, or parts of layers, mechanically or chemically · CPC title

• C01B31/0453

  Chemistry & Metallurgy · mapped topic

• B32B38/162

  Cleaning · CPC title

• B32B38/0036

  Heat treatment (for heating or cooling of layers during lamination B32B37/06, B32B37/08) · CPC title

• B32B37/06

  characterised by the heating method · CPC title