Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods

Patent metadata

Field	Value
Publication number	US-11996289-B2
Application number	US-202117141360-A
Country	US
Kind code	B2
Filing date	Jan 5, 2021
Priority date	Apr 16, 2020
Publication date	May 28, 2024
Grant date	May 28, 2024

Abstract

Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

First claim

What is claimed is:

1. A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber;
forming a first layer comprising silicon and germanium overlying a surface of the substrate; and
forming a second layer comprising silicon overlying the first layer,
wherein the step of forming the first layer comprises providing a surfactant precursor to the reaction chamber only during the last twenty-five percent of the step of forming the first layer, and
wherein the second layer consists essentially of silicon and is in direct contact with the first layer.

2. The method of claim 1 , wherein the surfactant precursor comprises one or more of gallium, tellurium, antimony, indium, tin, and aluminum.

3. The method of claim 1 , wherein the surfactant precursor comprises a halogen.

4. The method of claim 3 , wherein the surfactant precursor comprises a chloride, bromide, or iodine.

5. The method of claim 1 , wherein the surfactant precursor is selected from one or more of the group consisting of GaCl 3 , SnCl 4 , SbCl 3 , AlCl 3 , and InCl 3 .

6. The method of claim 1 , wherein an etchant is provided during the step of forming the first layer.

7. The method of claim 1 , wherein the step of forming the first layer comprises flowing two or more silicon precursors.

Assignees

• Asm Ip Holding Bv

Inventors

• Kajbafvala Amir
• Margetis Joe
• Sun Xin
• Kohen David
• Pierreux Dieter

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title