Method for tuning stress transitions of films on a substrate

Patent metadata

Field	Value
Publication number	US-11990334-B2
Application number	US-202016922809-A
Country	US
Kind code	B2
Filing date	Jul 7, 2020
Priority date	Jul 19, 2019
Publication date	May 21, 2024
Grant date	May 21, 2024

Abstract

The disclosure relates to a method for tuning stress transitions of films on a substrate. The method includes forming a stress-adjustment layer on the substrate, wherein the stress-adjustment layer includes first regions formed of a first material and second regions formed of a second material, wherein the first material includes a first internal stress and the second material includes a second internal stress, and wherein the first internal stress is different compared to the second internal stress; and forming transition regions between the first regions and the second regions, wherein the transition regions include an interface between the first material and the second material that has a predetermined slope that is greater than zero degrees and less than 90 degrees.

First claim

What is claimed is:

1. A method of adjusting stress on a substrate, the method comprising:
depositing a first layer of a first material on the substrate;
depositing a second layer of a second material on the first layer, wherein the first layer and the second layer are deposited on a backside surface of the substrate opposing a front side surface of the substrate, the front side surface of the substrate including semiconductor devices;
changing a solubility of the second layer at one or more coordinate locations on the substrate, wherein the solubility of the second layer is changed in solubility from a top surface of the second layer down to a predetermined depth into the second layer at each of the one or more coordinate locations, and wherein changing the solubility of the second layer includes creating a transition region defining a predetermined vertical acid diffusion length across the transition region; and
removing soluble portions of the second layer using a developer such that remaining portions of the second layer include a predetermined physical slope in the transition region from the top surface of the second layer down to the predetermined depth into the second layer, wherein the predetermined physical slope is greater than 15 degrees and less than 75 degrees, and wherein the first material and the second material have a same molecular composition and different internal stresses.

2. The method of claim 1 , further comprising:
executing an etch process that simultaneously etches the first material and the second material transferring the predetermined physical slope into the first layer.

3. The method of claim 2 , further comprising:
depositing a third material on the substrate resulting in a planar surface of the substrate, the third material filling regions of the substrate to a greatest vertical height of the first layer from the backside surface of the substrate.

4. The method of claim 3 , wherein the first material has a different internal stress as compared to the third material.

5. The method of claim 1 , wherein changing the solubility of the second layer includes creating a second transition region defining a second predetermined vertical acid diffusion length across the second transition region.

6. The method of claim 1 , further comprising:
depositing a third material on the substrate resulting in a planar surface of the substrate, the third material filling regions of the substrate to a greatest vertical height of the second layer from the backside surface of the substrate.

7. The method of claim 1 , further comprising:
depositing a third material on the substrate; and
planarizing the substrate to remove an overburden of the third material, the third material having the predetermined physical slope in the transition region.

8. The method of claim 1 , wherein creating the transition region defining the predetermined vertical acid diffusion length is based on a desired stress transition for the transition region.

9. The method of claim 1 , further comprising;
depositing a third material on the substrate, the third material filling regions of the substrate having a lesser vertical height from the backside surface of the substrate;
depositing a fourth material on the substrate, the fourth material filling regions of the substrate having a lesser vertical height from the backside surface of the substrate; and
planarizing the fourth material by changing a solubility of the fourth material at locations of relatively greater vertical height from the backside surface of the substrate, and removing soluble portions of the fourth material using a developer.

10. The method of claim 1 , wherein the predetermined physical slope is selected based on a design stress transition.

11. A method of adjusting stress on a substrate, the method comprising:
depositing a first layer of a first material on the substrate, wherein the first layer is deposited on a backside surface of the substrate opposing a front side surface of the substrate, the front side surface of the substrate including semiconductor devices;
changing a solubility of the first layer at one or more coordinate locations on the substrate, wherein the solubility of the first layer is changed in solubility from a top surface of the first layer down a predetermined depth into the first layer at each of the one or more coordinate locations, and wherein changing the solubility of the first layer includes creating a transition region defining a predetermined vertical acid diffusion length across the transition region;
removing soluble portions of the first layer using a specific developer such that remaining portions of the first layer include a predetermined physical slope based on the predetermined vertical acid diffusion length in the transition region from the top surface of the first layer down to the predetermined depth into the first layer, the predetermined physical slope being greater than 15 degrees and less than 75 degrees; and
depositing a second layer of a second material on the substrate, the second material forming an interface with the first material having the predetermined physical slope, the second material and the first material having a same molecular composition and different internal stresses.

12. A method of adjusting stress on a substrate, the method comprising:
forming a stress-adjustment layer on the substrate, wherein the stress-adjustment layer includes first regions formed of a first material and second regions formed of a second material, wherein the first material includes a first internal stress and the second material includes a second internal stress, and wherein the first internal stress is different compared to the second internal stress; and
forming transition regions between the first regions and the second regions, wherein the transition regions include an interface between the first material and the second material that has a predetermined physical slope that is greater than 15 degrees and less than 75 degrees and that is continuous from a top of the stress-adjustment layer down to a predetermined depth into the stress-adjustment layer, wherein the predetermined physical slope of the interface separates the first material and the second material in a planar view parallel to a surface of the substrate, and wherein the first material and the second material have a same molecular composition and different internal stresses.

13. The method of claim 12 , further comprising forming transition regions of different interface physical slopes based on a coordinate location on the substrate.

14. The method of claim 12 , wherein the first internal stress is a compressive stress, and the second internal stress is a compressive stress, or
wherein the first internal stress is a tensile stress, and the second internal stress is a tensile stress.

15. The method of claim 12 , wherein the first internal stress is a compressive stress, and the second internal stress is a tensile stress.

Assignees

• Tokyo Electron Ltd

Inventors

• Fulford Daniel
• Grzeskowiak Jodi
• Devilliers Anton J

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6506 Primary

  Formation of intermediate materials · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title