Organometallic solution based high resolution patterning compositions

US11988958B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11988958-B2
Application numberUS-201916536768-A
CountryUS
Kind codeB2
Filing dateAug 9, 2019
Priority dateAug 22, 2013
Publication dateMay 21, 2024
Grant dateMay 21, 2024

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  5. First independent claim

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Abstract

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Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for patterning a substrate with radiation, the method comprising: irradiating a coated substrate along a selected pattern, wherein the coated substrate comprises a coating that comprises EUV radiation sensitive metal-carbon bonds, wherein exposure of the coating material to EUV radiation at a dose from about 3 mJ/cm 2 to 150 mJ/cm 2 alters the chemical properties of the coating material to create an exposed coating material with differential dissolution rates between exposed and un-exposed regions of the coating material and wherein the irradiated regions are at least partially condensed to increase metal oxide character, wherein the metal of the metal—carbon bonds consists of Sn, Sb, In or a combination thereof. 2. The method of claim 1 wherein alkyl ligands form the metal—carbon bonds. 3. The method of claim 1 wherein a combination of different alkyl ligands form the metal—carbon bonds. 4. The method of claim 1 wherein the coating comprises metal—t-butyl ligand bonds. 5. The method of claim 1 wherein the coating comprises a metal oxo-hydroxo network with M-OH linkages and M-O-M linkages, where M represents the metal atom. 6. The method of claim 1 wherein the coating has a dried thickness from about 3 nanometers to about 40 nanometers. 7. The method of claim 1 wherein the coated substrate is formed with a process comprising using spin coating of a precursor composition. 8. The method of claim 1 further comprising heating the exposed coating material prior to development to a temperature from about 60° C. to about 175° C. for from about 0.5 minutes to about 30 minutes. 9. The method of claim 1 further comprising developing the exposed coating material with an organic developer to remove the unexposed regions of the coating material. 10. The method of claim 9 wherein the organic developer comprises propylene glycol monomethyl ester acetate. 11. The method of claim 1 further comprising developing the exposed coating material with an aqueous developer to remove the exposed regions of the coating material. 12. The method of claim 1 further comprising depositing a precursor solution onto the substrate to form a precursor coated substrate. 13. The method of claim 12 wherein the precursor solution comprises an alcohol. 14. The method of claim 12 wherein the precursor solution comprises an ester or a ketone. 15. The method of claim 12 wherein the metal-carbon bonds comprise tin-carbon bonds and—wherein the precursor solution has a tin concentration from about 0.01M to about 1.4M. 16. The method of claim 12 further comprising removing solvent from the precursor coated substrate to form the coated substrate. 17. The method of claim 16 wherein removing the solvent comprises heating the precursor coated substrate to temperatures from about 55° C. to about 225° C. for from about 0.5 minutes to about 30 minutes. 18. The method of claim 1 wherein the EUV dose is from 5 mJ/cm 2 to 100 mJ/cm 2 . 19. The method of claim 1 wherein the EUV radiation has a wavelength of 13.5 nm. 20. The method of claim 1 wherein the selected pattern has features with adjacent linear segments of neighboring structures having an average pitch of no more than about 60 nm. 21. A method for patterning a substrate with radiation, the method comprising: irradiating a coated substrate along a selected pattern, wherein the coated substrate comprises a coating that comprises EUV radiation sensitive metal-carbon bonds, wherein exposure of the coating material to EUV radiation at a dose from about 3 mJ/cm 2 to 150 mJ/cm 2 alters the chemical properties of the coating material to create an exposed coating material with differential dissolution rates between exposed and un-exposed regions of the coating material and wherein the irradiated regions are at least partially condensed to increase metal oxide character, wherein the coating comprises a first metal consisting of Sn, Sb, In or a combination thereof and a second metal consisting of one or more metal other than Sn, Sb or In, wherein the one or more metal other than Sn, Sb or In comprises Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu or combinations thereof, wherein the mole ratio of the second metal to the first metal is from about 0.1 to about 0.75.

Assignees

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Classifications

  • Manufacture or treatment · CPC title

  • Organic absorbers, e.g. of photo-resists · CPC title

  • Protective coatings · CPC title

  • Imagewise removal using liquid means · CPC title

  • characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title

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What does patent US11988958B2 cover?
Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use…
Who is the assignee on this patent?
Inpria Corp
What technology area does this patent fall under?
Primary CPC classification G03F7/0042. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 21 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).