Organometallic solution based high resolution patterning compositions
US-10416554-B2 · Sep 17, 2019 · US
US11966159B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11966159-B2 |
| Application number | US-202217903605-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2022 |
| Priority date | Aug 22, 2013 |
| Publication date | Apr 23, 2024 |
| Grant date | Apr 23, 2024 |
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Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
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What is claimed is: 1. An article comprising: a substrate; and a layer of a radiation sensitive material supported by the substrate, the radiation sensitive material comprising a metal oxo-hydroxo network with organo-stabilized metal cations having organic ligands with metal carbon bonds and/or with metal carboxylate bonds, wherein the metal oxo-hydroxo network comprises both M—O—H linkages and M—O-M linkages, wherein M represents the organo-stabilized metal cations, wherein the organo-stabilized metal cations comprise tin in a total amount of at least about 55 mole % of total metal content. 2. The article of claim 1 wherein the layer has an average thickness from about 1 nm to about 200 nm. 3. The article of claim 2 wherein the layer has a thickness variation of no more than about 50% from the average thickness. 4. The article of claim 3 wherein the layer has an average thickness from about 1 nm to about 40 nm. 5. The article of claim 1 wherein the radiation sensitive material is free of peroxide ligands. 6. The article of claim 1 wherein the metal oxo-hydroxo network is stable against ligand cleavage to provide a controlled response to irradiation. 7. The article of claim 1 wherein the organic ligands form a radiation sensitive metal carbon bond and wherein the ligand forming the metal carbon bond comprises an alkyl ligand, alkenyl ligand, aryl ligand, or a combination thereof, each ligand having 1 to 16 carbon atoms and/or wherein the organic ligands form a radiation sensitive metal carboxylate bond and wherein the ligand forming the metal carboxylate bond comprises an alkyl carboxylate ligand, alkenyl carboxylate ligand, aryl carboxylate ligand or a combination thereof, each ligand having 1 to 16 carbon atoms. 8. The article of claim 7 wherein the alkenyl ligands comprise vinyl ligands or allyl ligands. 9. The article of claim 1 wherein a combination of different alkyl ligands are bound to the metal. 10. The article of claim 1 wherein the layer comprises one or more compositions with tin and non-tin metals in a blend. 11. The article of claim 1 wherein the organic ligands comprise methyl, ethyl, propyl, butyl, t-butyl, phenyl, benzyl, vinyl, allyl, acetate, propanoate, butanoate, benzoate, or combinations thereof. 12. The article of claim 1 wherein the organic ligands with metal carbon bonds comprise branched alkyl ligands. 13. The article of claim 1 wherein the organic ligands with metal carbon bonds comprise t-butyl ligands. 14. The article of claim 1 wherein the material has a mole ratio between the organic ligands and the metal cations from about 0.5 to about 3. 15. The article of claim 1 wherein the tin is in a total amount of at least about 75 mol % of total metal content. 16. The article of claim 1 wherein the substrate comprises a semiconductor wafer. 17. The article of claim 1 wherein the layer is sensitive to EUV, UV, or e-beam radiation exposure. 18. The article of claim 1 wherein exposure to radiation causes a reaction in the exposed regions of the layer, the reaction comprising breaking of at least some of the metal carbon bonds and/or metal carboxylate bonds. 19. The article of claim 18 wherein the irradiated material comprises an enhanced metal oxo-hydroxo network, wherein the enhanced metal oxo-hydroxo network has a lower carbon to metal ratio than the metal oxo-hydroxo network, and wherein the irradiated material can be alternatively subjected to positive tone imaging or negative tone imaging. 20. The article of claim 1 wherein the layer is formed by depositing a precursor solution having hydrolysable ligands and the organic ligands onto the substrate and optionally, after depositing, heating to temperatures from about 45° C. to about 250° C. for from about 0.1 minutes to about 30 minutes to form the article. 21. The article of claim 20 wherein the depositing is by spin-coating, spray coating, dip coating, knife edge coating, or printing process or combinations thereof. 22. The article of claim 20 wherein the precursor solution comprises a solvent and a tin composition having hydrolysable ligands and the organic ligands, wherein the solvent comprises an alcohol, an ester, an aromatic compound, a ketone, or a combination thereof. 23. The article of claim 1 wherein the radiation sensitive material further comprises antimony and/or indium. 24. The article of claim 1 wherein the material has a mole ratio between the organic ligands and the metal cations from about 0.75 to about 3. 25. The article of claim 1 wherein the material has a mole ratio between the organic ligands and the metal cations of about 1. 26. The article of claim 1 wherein the layer has an average thickness from about 2 nm to about 40 nm. 27. The article of claim 1 wherein the layer has an average thickness from about 3 nm to about 25 nm.
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