Electronic module including a semiconductor package connected to a fluid heatsink

Patent metadata

Field	Value
Publication number	US-11955407-B2
Application number	US-202117151267-A
Country	US
Kind code	B2
Filing date	Jan 18, 2021
Priority date	Jan 20, 2020
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

An electronic module includes a semiconductor package including a die carrier, a semiconductor transistor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant. The electronic module further includes an interposer layer on which the semiconductor package is disposed, and a heat sink through which a cooling medium can flow. The interposer layer is disposed on the heatsink.

First claim

What is claimed is:

1. An electronic module, comprising:
four or more semiconductor packages, each semiconductor package comprising a die carrier, a semiconductor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant;
three or more interposer layers, wherein each semiconductor package is disposed on an interposer layer; and
a heat sink through which a cooling medium can flow, wherein each interposer layer is disposed on the heatsink,
wherein at least one of the three or more interposer layers carries only one semiconductor package, and
wherein at least one of the three or more interposer layers carries two or more semiconductor packages.

2. The electronic module of claim 1 , wherein a die carrier of the four or more semiconductor packages is one of a portion of a leadframe, an isolated metal substrate, a direct copper bond substrate, or an active metal braze substrate.

3. The electronic module of claim 1 , wherein an interposer layer of the three or more interposer layers is one of an isolated metal substrate, a direct copper bond substrate, or an active metal braze substrate.

4. The electronic module of claim 1 , wherein an interposer layer of the three or more interposer layers is embedded in an upper main face of the heatsink.

5. The electronic module of claim 1 , wherein an interposer layer of the three or more interposer layers is soldered, diffusion soldered, or sintered onto the heatsink, or connected to the heatsink by a glue, a conductive glue or a silver glue.

6. The electronic module of claim 1 , wherein a semiconductor package of the four or more semiconductor packages is soldered, diffusion soldered, or sintered onto the interposer layer, or connected to the interposer layer by a conductive glue or a silver conductive glue.

7. The electronic module of claim 1 , wherein a semiconductor die of the four or more semiconductor packages is one or more of a wide band gap semiconductor die, a SiC die, or a GaN die.

8. The electronic module of claim 1 , wherein a semiconductor die of the four or more semiconductor packages is one or more of a semiconductor transistor die, a power semiconductor transistor die, a power IGBT die, a power MOSFET die, a semiconductor diode die, or a thyristor die.

9. The electronic module of claim 1 , wherein the two or more semiconductor packages on an interposer layer that carries two or more semiconductor packages are connected with each other to form one or more of a DC/DC circuit, a DC/AC circuit, an AC/DC circuit, a half-bridge circuit, a full-bridge circuit, or a Vienna rectifier circuit.

10. The electronic module of claim 1 , wherein a semiconductor package of the four or more semiconductor packages is one or more of a discrete or standardized package, a discrete or standardized power package, a TO package, a TO220 package, a TO247 package, a TO263 package, or a D2PAK package.

11. The electronic module of claim 1 , wherein the heatsink comprises a first main face and a second main face opposite to the first main face, wherein a semiconductor package of the four or more semiconductor packages is disposed on the first main face of the heatsink, and wherein an additional semiconductor package is disposed on the second main face of the heatsink.

12. The electronic module of claim 1 , wherein the cooling medium is nonconductive.

13. The electronic module of claim 1 , wherein the heatsink is one or more of conductive, nonconductive, organic, or inorganic.

14. The electronic module of claim 1 , wherein a die carrier of the four or more semiconductor packages is thicker than the interposer layer on which the semiconductor package comprising the die carrier is disposed.

15. The electronic module of claim 1 , wherein an inner volume of the electronic module is filled with a further encapsulant.

16. The electronic module of claim 1 , further comprising a control board including one or more controller chips which control an electronic circuit which includes a semiconductor die of a semiconductor package of the four or more semiconductor packages.

17. The electronic module of claim 1 , further comprising connectivity devices configured to connect the electronic module to external entities.

18. An electronic module, comprising:
a semiconductor package comprising a die carrier, a semiconductor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant;
an interposer layer, wherein the semiconductor package is disposed on the interposer layer; and
a heat sink through which a cooling medium can flow, wherein the interposer layer is disposed on the heatsink,
wherein the interposer layer is embedded in an upper main face of the heatsink.

19. An electronic module, comprising:
a semiconductor package comprising a die carrier, a semiconductor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant;
an interposer layer, wherein the semiconductor package is disposed on the interposer layer;
a heat sink through which a cooling medium can flow, wherein the interposer layer is disposed on the heatsink; and
a control board including one or more controller chips which control an electronic circuit which includes the semiconductor die of the semiconductor package.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Fuergut Edward
• Chiola Davide
• Gruber Martin
• Hable Wolfram

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W90/288

  characterised by arrangements for thermal management of the stacked chips · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W70/40

  Leadframes · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title