Molecular resist composition and patterning process

Patent metadata

Field	Value
Publication number	US-11953827-B2
Application number	US-202016858092-A
Country	US
Kind code	B2
Filing date	Apr 24, 2020
Priority date	May 27, 2019
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

First claim

The invention claimed is:

1. A molecular resist composition comprising:
(A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a sulfur atom and a phenyl group substituted with an acid labile group of acetal form having the following formula (A′), the phenyl group being attached to the sulfur atom, and
(B) an organic solvent,
the resist composition being free of a base resin,

wherein L 3 and L 4 are each independently a single bond, ether bond, ester bond, sulfonate bond, carbonate bond or carbamate bond,
X L2 is a single bond or a C 1 -C 40 divalent hydrocarbon group which may contain a heteroatom,
R a is hydrogen or a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom,
R b and R c are each independently a C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom, R b and R c may bond together to form a ring with the oxygen atoms to which they are attached and the intervening carbon atom.

2. The molecular resist composition of claim 1 wherein the betaine type onium compound has the formula (A):

wherein a is an integer of 1 to 5, k is an integer of 0 to 3,
Q 1 and Q 2 are each independently fluorine or a C 1 -C 6 fluoroalkyl group,
Q 3 and Q 4 are each independently hydrogen, fluorine or a C 1 -C 6 fluoroalkyl group,
L 1 and L 2 are each independently a single bond, ether bond, ester bond, sulfonate bond, carbonate bond, or carbamate bond,
X L1 is a single bond or a C 1 -C 40 divalent hydrocarbon group which may contain a heteroatom,
R 1 is an acid labile group of acetal form having the formula (A′), in case of a ≥2, R 1 may be identical or different and two R 1 may bond together to form a ring with the atoms to which they are attached,
R 2 is a C 1 -C 50 monovalent hydrocarbon group which may contain a heteroatom,
R 3 is a C 1 -C 50 divalent hydrocarbon group which may contain a heteroatom,
any two of the phenyl group to which R 1 is attached, R 2 , and R 3 may bond together to form a ring with the sulfur atom to which they are attached.

3. The molecular resist composition of claim 2 wherein the betaine type onium compound has the formula (A-1):

wherein a, k, Q 1 to Q 4 , L 1 , L 2 , X L1 , and R 1 are as defined above, R 2A and R 3A are each independently a C 1 -C 40 monovalent hydrocarbon group which may contain a heteroatom, b is an integer of 0 to 5, c is an integer of 0 to 4,
in case of b ≥2, R 2A may be identical or different and two R 2A may bond together to form a ring with the atoms to which they are attached, in case of c≥2, R 3A may be identical or different and two R 3A may bond together to form a ring with the atoms to which they are attached.

4. The molecular resist composition of claim 3 wherein the betaine type onium compound has the formula (A-2):

wherein a, b, c, Q 1 to Q 3 , L 1 , L 2 , X L1 , R 1 , R 2A , and R 3A are as defined above.

5. The molecular resist composition of claim 1 , further comprising (C) a surfactant.

6. The molecular resist composition of claim 1 , further comprising (D) a quencher.

7. A pattern forming process comprising the steps of applying the molecular resist composition of claim 1 onto a substrate to form a resist film thereon, exposing the resist film to high-energy radiation, and developing the exposed resist film in a developer.

8. The process of claim 7 wherein the high-energy radiation is i-line, KrF excimer laser, ArF excimer laser, EB, or EUV of wavelength 3 to 15 nm.

9. The molecular resist composition of claim 2 wherein the acid labile group of acetal form is selected from the group consisting of the following formulae:

wherein R a is as defined above.

10. The molecular resist composition of claim 1 wherein R b and R c bond together to form a ring with the oxygen atoms to which they are attached and the intervening carbon atom.

Assignees

• Shinetsu Chemical Co

Inventors

• Fukushima Masahiro
• Ohashi Masaki
• Katayama Kazuhiro

Classifications

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/162

  Coating on a rotating support, e.g. using a whirler or a spinner · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/0045 Primary

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title