Deposition of metal films with tungsten liner

Patent metadata

Field	Value
Publication number	US-11948836-B2
Application number	US-202117498247-A
Country	US
Kind code	B2
Filing date	Oct 11, 2021
Priority date	May 4, 2018
Publication date	Apr 2, 2024
Grant date	Apr 2, 2024

Abstract

Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

First claim

What is claimed is:

1. An electronic device comprising:
a substrate comprising a dielectric layer thereon and having at least one feature, the at least one feature formed in the dielectric layer;
an annealed non-nitride based metallic tungsten layer formed on the at least one feature and having a thickness in a range of from 5 Å to 35 Å, the annealed non-nitride based metallic tungsten layer formed by exposing the substrate to a plasma formed from a first gas, followed by an annealing process, the first gas consisting of a metallic tungsten precursor gas selected from the group consisting of a fluorine free tungsten halide precursor, a fluorine free tungsten oxy-halide precursor, and a fluorine-free, chlorine-free tungsten precursor, a hydrogen containing gas, and an inert gas; and
an annealed cobalt film formed on the annealed non-nitride based metallic tungsten layer, wherein the annealed cobalt film does not show any de-wetting on the annealed non-nitride based metallic tungsten layer.

2. The electronic device of claim 1 , wherein the at least one feature is selected from the group consisting of a trench, a via, and a peak.

3. The electronic device of claim 1 , wherein the annealed cobalt film comprises CVD cobalt.

4. The electronic device of claim 1 , wherein the dielectric layer comprises a dielectric material having a k-value less than 5.

5. The electronic device of claim 4 , wherein the dielectric material has a k-value less than 2.

6. The electronic device of claim 1 , wherein the annealed non-nitride based metallic tungsten layer is fluorine-free and chlorine-free.

7. The electronic device of claim 1 , wherein the annealed non-nitride based metallic tungsten layer has a resistivity less than 20 ohms-cm.

8. The electronic device of claim 1 , wherein the annealed non-nitride based metallic tungsten layer has a resistivity less than 10 ohms-cm.

9. The electronic device of claim 1 , wherein the dielectric layer has a thickness in a range of 10 nm to 2 μm.

10. The electronic device of claim 1 , wherein the annealed non-nitride based metallic tungsten layer has a thickness in a range of from 10 Å to 30 Å.

11. The electronic device of claim 1 , wherein the annealed cobalt film is a cobalt gapfill layer.

12. An electronic device comprising:
a substrate comprising a dielectric layer and having at least one trench formed in the dielectric layer, the at least one trench having a top, two sidewalls, and a bottom, wherein the dielectric layer has a thickness in a range of 10 nm to 2 μm and wherein the dielectric layer comprises a dielectric material having a k-value less than 5;
an annealed non-nitride based metallic tungsten layer formed on the at least one trench, wherein the annealed non-nitride based metallic tungsten layer is formed by exposing the substrate to a plasma formed from a first gas, followed by an annealing process, the first gas consisting of a metallic tungsten precursor gas selected from the group consisting of a fluorine free tungsten halide precursor, a fluorine free tungsten oxy-halide precursor, and a fluorine-free, chlorine-free tungsten precursor, a hydrogen containing gas, and an inert gas, is fluorine-free and chlorine-free and has a thickness in a range of from 5 Å to 35 Å and a resistivity less than 20 ohms-cm; and
an annealed cobalt film formed on the annealed non-nitride based metallic tungsten layer, wherein the annealed cobalt film does not show any de-wetting on the annealed non-nitride based metallic tungsten layer.

13. The electronic device of claim 12 , wherein the annealed non-nitride based metallic tungsten layer has a thickness in a range of from 10 Å to 30 Å.

14. The electronic device of claim 12 , wherein the annealed cobalt film is a cobalt gapfill layer.

15. The electronic device of claim 12 , wherein the annealed non-nitride based metallic tungsten layer has a resistivity less than 10 ohms-cm.

16. The electronic device of claim 12 , wherein the at least one trench has an aspect ratio greater than 10:1.

17. The electronic device of claim 12 , wherein the annealed non-nitride based metallic tungsten layer is a conductive liner.

18. The electronic device of claim 1 , wherein the annealing process comprises a temperature less than or equal to about 400° C. and a pressure greater than or equal to about 1 Torr.

Assignees

• Applied Materials Inc

Inventors

• Lei Yu
• Lee Sang-Hyeob
• Pabelico Chris
• Xu Yi
• Ha Tae Hong
• Tang Xianmin
• Park Jin Hee

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10W20/098

  by filling between adjacent conductive parts · CPC title

• H10W20/076

  in via holes or trenches · CPC title