Thermally sensitive state change ionic redox transistor

Patent metadata

Field	Value
Publication number	US-11942282-B1
Application number	US-202117374029-A
Country	US
Kind code	B1
Filing date	Jul 13, 2021
Priority date	Jul 13, 2021
Publication date	Mar 26, 2024
Grant date	Mar 26, 2024

Abstract

A thermally sensitive ionic redox transistor comprises a channel, a reservoir layer, and an electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing concentration of ions in the channel layer. The electrolyte layer is configured to undergo a state change at a state transition temperature. Below the state transition temperature, ions in the electrolyte layer are substantially immobile. Above the state transition temperature, ions can move freely between the reservoir layer and the channel across the electrolyte layer in response to a voltage being applied between the channel and the reservoir layer. When the device is cooled below the state transition temperature or temperature range, the ions are trapped in one or more of the layers because the electrolyte layer loses its ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel.

First claim

What is claimed is:

1. A device, comprising:
a solid channel layer having a variable conductance;
a source coupled to a first side of the solid channel layer;
a drain coupled to a second side of the solid channel layer;
a solid reservoir layer;
an electrolyte layer positioned between the channel layer and the reservoir layer, wherein:
when a write operation is undertaken on the device, the device is heated to a temperature above a state transition temperature and a write voltage is applied between the channel layer and the reservoir layer, conductivity of the electrolyte layer is increased with respect to ions or vacancies present in at least one of the channel layer or the reservoir layer, the ions or vacancies migrate between the reservoir layer and the channel layer by way of the electrolyte layer, and conductance of the channel layer changes responsive to the ions or vacancies migrating between the reservoir layer and the channel layer; and
when a read operation is undertaken on the device, a temperature of the device is below the state transition temperature and a read voltage is applied between the source and the drain, where the conductance of the channel layer is substantially invariant when the temperature of the device is below the state transition temperature.

2. The device of claim 1 , wherein when the temperature of the device is below the state transition temperature, the electrolyte layer has a conductivity of less than or equal to about 10 −5 S/cm.

3. The device of claim 1 , wherein when the temperature of the device is above the state transition temperature, the electrolyte layer has a conductivity of greater than or equal to about 10 −2 S/cm.

4. The device of claim 1 , wherein when the temperature of the device is above the state transition temperature, the electrolyte layer has a first conductivity, and wherein the temperature of the device is below the state transition temperature, the electrolyte layer has a second conductivity, the first conductivity being greater than or equal to 1000 times the second conductivity.

5. The device of claim 1 , wherein the electrolyte layer comprises:
a solid matrix; and
an ionic compound suspended in the solid matrix, wherein the ionic compound undergoes a phase change at the state transition temperature.

6. The device of claim 5 , wherein the solid matrix is composed of a material selected from a group consisting of:
silica;
poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP); and
alumina.

7. The device of claim 5 , wherein the ionic compound is a liquid above the state transition temperature.

8. The device of claim 5 , wherein the ionic compound is selected from a group consisting of:
an imidazolium-based mineral-acid compound;
1,2,4-Triazolium perfluorobutanesulfonate; and
oxalic acid.

9. The device of claim 1 , wherein the electrolyte layer is composed of a solid acid.

10. The device of claim 9 , wherein the electrolyte layer is composed of cesium bisulfate (CsHSO 4 ).

11. The device of claim 9 , wherein the electrolyte layer is composed of potassium phosphate.

12. The device of claim 1 , wherein the electrolyte layer is composed of a solid-state cation conductor.

13. The device of claim 12 , wherein the electrolyte layer is composed of copper(I) sulfide (Cu 2 S).

14. The device of claim 12 , wherein the electrolyte layer is composed of lithium borohydride.

15. The device of claim 1 , wherein at least one of the channel layer or the reservoir layer is composed of a material selected from the group consisting of PEDOT:PSS, VO x , WO x , and MoO x .

16. A method, comprising:
performing a write operation on a device, where performing the write operation comprises:
heating the device, where the device comprises an electrolyte layer positioned between a reservoir layer and a channel layer that has a variable conductance to a temperature above a state transition temperature, wherein above the state transition temperature the electrolyte layer undergoes a structural state change; and
applying a write voltage between the reservoir layer and the channel layer while the device is above the state transition temperature, wherein responsive to the write voltage being applied, ions or vacancies migrate between the reservoir layer and the channel layer by way of the electrolyte layer, and wherein the conductance of the channel layer changes responsive to the ions or vacancies migrating between the reservoir layer and the channel layer; and

performing a read operation on the device, where performing the read operation comprises:
applying a read voltage between a source and a drain of the device when the device is below the state transition temperature to obtain a value of the conductance of the channel layer, where the source and the drain are coupled to the channel layer, and further where the conductance of the channel layer is substantially invariant when the device is below the state transition temperature and a read voltage is applied between the source and the drain.

17. The method of claim 16 , wherein the structural state change is a phase change.

18. The method of claim 16 , wherein the structural state change is a change of a crystalline internal structure of the electrolyte layer.

19. An analog memory device comprising:
a source contact;
a drain contact;
a gate contact;
a channel layer disposed between the source contact and the drain contact, the channel layer having a variable conductance;
a reservoir layer having the gate contact deposited thereon;
an electrolyte layer positioned between the channel layer and the reservoir layer, wherein:
when a write operation is performed on the analog memory device, the analog memory device is heated to a temperature above a state transition temperature of the electrolyte layer and a write voltage is applied between the gate contact and one of the source contact or the drain contact, resulting in ions migrating between the reservoir layer and the channel layer by way if the electrolyte layer, wherein the conductance of the channel layer changes responsive to the ions migrating between the reservoir layer and the channel layer, and
when a read operation is performed on the analog memory device, the analog memory device has a temperature that is below the state transition temperature of the electrolyte layer and a read voltage is applied between the source contact and the drain contact to obtain a value of the conductance of the channel layer, where the conductance of the channel layer is substantially invariant when the analog memory device has the temperature that is below the state transition temperature of the electrolyte layer.

20. The analog memory device of claim 19 , wherein the electrolyte layer comprises:
a solid matrix; and
an ionic compound suspended in the solid matrix, wherein the ionic compound undergoes a phase change at the state transition temperature.

Assignees

• Nat Tech & Eng Solutions Sandia Llc

Inventors

• Ashby David Scott
• Fuller Elliot James
• Talin Albert Alec
• Li Yiyang

Classifications

• H10N70/8836

  Complex metal oxides, e.g. perovskites, spinels · CPC title

• H10N70/881

  Switching materials · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/253

  having three or more electrodes, e.g. transistor-like devices · CPC title

• H10N70/24

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title