Thermally sensitive ionic redox transistor

Patent metadata

Field	Value
Publication number	US-11450802-B1
Application number	US-202016854151-A
Country	US
Kind code	B1
Filing date	Apr 21, 2020
Priority date	Apr 21, 2020
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

A thermally sensitive ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. A conductance of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel layer. Ionic conductivity of the gate, electrolyte, and channel layers increase with increasing temperature. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer when the device is heated to an elevated temperature. When the device is cooled below the elevated temperature, the ions are trapped in one or more of the layers because the materials lose their ionic conductivity. A state of the redox transistor can be read by measuring the conductance of the channel.

First claim

What is claimed is:

1. A device, comprising:
a channel layer having a conductance that is variable, wherein the channel layer is a solid;
a reservoir layer, wherein the reservoir layer is a solid;
an electrolyte layer positioned between the channel layer and the reservoir layer, the electrolyte layer being a solid comprising yttria-stabilized zirconia (YSZ), wherein when the device is heated to between about 80° C. and about 300° C., ions or vacancies migrate between the reservoir layer and the channel layer by way of the electrolyte layer responsive to a voltage being applied between the reservoir layer and the channel layer, wherein the conductance of the channel layer changes responsive to the ions or vacancies migrating between the reservoir layer and the channel layer.

2. The device of claim 1 , wherein responsive to the voltage being applied between the reservoir layer and the channel layer, vacancies migrate between the reservoir layer and the channel layer by way of the electrolyte layer.

3. The device of claim 2 , wherein the vacancies are oxygen vacancies.

4. The device of claim 1 , wherein the reservoir layer comprises titanium oxide having a plurality of oxygen vacancies formed therein.

5. The device of claim 1 , wherein the channel layer comprises titanium oxide having a plurality of oxygen vacancies formed therein.

6. The device of claim 1 , wherein responsive to the electrolyte layer being heated, a concentration of ions or vacancies in the electrolyte layer increases.

7. The device of claim 1 , wherein responsive to the device being heated, an ionic conductivity of at least one of the electrolyte layer, the channel layer, or the reservoir layer increases.

8. The device of claim 1 , wherein at a temperature of less than 50° C. a conductance of the channel degrades by less than 2% after 10 days.

9. The device of claim 1 , wherein at least one of the channel layer or the reservoir layer comprises VO 2-δ .

10. The device of claim 1 , wherein when the device is at a temperature less than about 50° C., the conductance of the channel layer is substantially unchanged responsive to the voltage being applied between the reservoir layer and the channel layer.

11. The device of claim 1 , further comprising:
a source electrical contact disposed at a first end of the channel layer;
a drain electrical contact disposed at a second end of the channel layer opposite the first end; and
a gate electrical contact disposed on the reservoir layer.

12. The device of claim 1 , wherein at least one of the channel layer or the reservoir layer comprises MoO 3-δ .

13. The device of claim 1 , wherein at least one of the channel layer or the reservoir layer comprises CeO 2-δ .

14. The device of claim 1 , wherein at least one of the channel layer or the reservoir layer comprises LaMnO 3-δ .

15. The device of claim 1 , wherein at least one of the channel layer or the reservoir layer comprises HfO 2-δ .

16. A method, comprising:
heating, to a temperature between about 80° C. and about 300° C., a device that comprises an electrolyte layer that comprises yttria-stabilized zirconia (YSZ) and that is positioned between a reservoir layer that is solid and a channel layer that is solid and that has a conductance that is variable;
applying a voltage between the reservoir layer and the channel layer while the device is at the temperature between about 80° C. and about 300° C., wherein responsive to the voltage being applied, ions or vacancies migrate between the reservoir layer and the channel layer by way of the electrolyte layer, and wherein the conductance of the channel layer changes responsive to the ions or vacancies migrating between the reservoir layer and the channel layer.

17. The method of claim 16 , wherein oxygen vacancies migrate between the reservoir layer and the channel layer responsive to the voltage being applied.

18. The method of claim 16 , further comprising:
applying a second voltage between a first electrical contact and a second electrical contact, the first electrical contact is in contact with the channel layer at a first end of the channel layer, the second electrical contact is in contact with the channel layer at a second end of the channel layer; and
reading a state of the device, wherein reading the state comprises:
measuring a magnitude of current flow between the first electrical contact and the second electrical contact while the second voltage is applied, wherein the magnitude of the current flow is indicative of the state of the device.

19. The method of claim 16 , wherein reading the state of the device further comprises computing a conductance of the channel layer based upon the second voltage and the magnitude of the current flow, wherein the conductance is indicative of the state of the device.

20. An analog memory device comprising:
a source contact;
a drain contact;
a gate contact;
a channel layer disposed between the source contact and the drain contact, the channel layer having a conductance that is variable;
a reservoir layer having the gate contact deposited thereon;
an electrolyte layer that comprises yttria-stabilized zirconia (YSZ), the electrolyte layer positioned between the channel layer and the reservoir layer, wherein, when the analog memory device is heated to a temperature between about 80° C. and about 300° C., ions migrate between the reservoir layer and the channel layer by way of the electrolyte layer responsive to a voltage being applied between the gate contact and one of the source contact or the drain contact, wherein the conductance of the channel layer changes responsive to the ions migrating between the reservoir layer and the channel layer.

Assignees

• Nat Tech & Eng Solutions Sandia Llc

Inventors

• Li Yiyang
• Talin Albert Alec
• Fuller Elliot James

Classifications

• G11C2213/53

  Structure wherein the resistive material being in a transistor, e.g. gate · CPC title

• G11C2013/008

  Write by generating heat in the surroundings of the memory material, e.g. thermowrite · CPC title

• G11C2013/0045

  Read using current through the cell · CPC title

• G11C13/02

  using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)} · CPC title

• G11C13/0061

  Timing circuits or methods · CPC title