Mask Assembly
US-2020057394-A1 · Feb 20, 2020 · US
US11940726B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11940726-B2 |
| Application number | US-202217851580-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2022 |
| Priority date | Sep 12, 2016 |
| Publication date | Mar 26, 2024 |
| Grant date | Mar 26, 2024 |
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Official abstract text for this publication.
A lithography apparatus comprises a light source for emitting light; a mask mounting zone where a mask for reflecting the light is disposed; and a mask protective module disposed on the mask to transmit the light from the light source toward the mask. The mask protective module comprises a frame and a membrane supported by the frame, wherein the membrane includes a penetration region for transmitting the light and a peripheral region of which a light transmittance is lower than that of the penetration region.
Opening claim text (preview).
What is claimed is: 1. A lithography apparatus comprising: a light source for emitting light; a mask mounting zone where a mask for reflecting the light is disposed; and a mask protective module disposed on the mask to transmit the light from the light source toward the mask, and a penetration region replacing device, wherein the penetration region replacing device comprises: a rod; and a penetration region mounting unit connected to an end of the rod and configured to turn on the rod as an axis, wherein the penetration region mounting unit comprises a plurality of penetration region modules providing a penetration region of a membrane and turns to provide a new penetration region module not used on the mask protective module, wherein the mask protective module comprises, a frame; and the membrane supported by the frame, wherein the membrane includes the penetration region for transmitting the light and a peripheral region of which a light transmittance is lower than that of the penetration region. 2. The lithography apparatus of claim 1 , wherein the light comprises extreme ultraviolet light. 3. The lithography apparatus of claim 1 , wherein the peripheral region surrounds the penetration region, and wherein mechanical strength or heat conductivity of the peripheral region is higher than that of the penetration region. 4. The lithography apparatus of claim 1 , wherein the penetration region comprises a first penetration region and a second penetration region which are spaced apart from each other, and the peripheral region surrounds the first and second penetration regions.
Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title
Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof · CPC title
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof · CPC title
Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title
Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title
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