Ultralight robust plate materials

Patent metadata

Field	Value
Publication number	US-11939672-B2
Application number	US-202117541681-A
Country	US
Kind code	B2
Filing date	Dec 3, 2021
Priority date	Sep 15, 2014
Publication date	Mar 26, 2024
Grant date	Mar 26, 2024

Abstract

A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

First claim

The invention claimed is:

1. A method of fabricating a plate structure comprising:
creating a plate structure pattern in a silicon substrate, the plate structure pattern defining ridges that form a pattern;
depositing a layer of aluminum oxide (Al 2 O 3 ) on a first side of the silicon substrate to form a patterned aluminum oxide;
removing the silicon substrate using reactive ion etching; and
using plasma-enhanced chemical vapor deposition to deposit a thin film on both sides of the patterned aluminum oxide,
wherein the plate structure has a thickness between about 1 nanometer (“nm”) and about 1 millimeter (“mm”).

2. The method of claim 1 , wherein the pattern is a hexagonal honeycomb pattern.

3. The method of claim 1 , wherein the reactive ion etching includes at least one of XeF 2 etching or isotropic CF 4 +O 2 plasma anisotropic reactive ion etching.

4. The method of claim 1 , wherein the pattern is formed by etching depressions into a top surface of the silicon substrate to define the ridges or cutting the plate structure to a particular desired geometry using argon laser cutting.

5. The method of claim 1 , wherein the hexagonal honeycomb pattern is formed by at least one of inductively coupled plasma etching or reactive ion etching of the silicon substrate.

6. The method of claim 1 , wherein the layer of aluminum oxide is at least 60 nanometers thick.

7. The method of claim 1 , wherein the layer of aluminum oxide is deposited using conformal atomic layer deposition.

8. The method of claim 1 , wherein the formed plate structure includes at least one base plate in a first plane and a plurality of out-of-plane rib plates defined by the ridges that form at least one strengthening rib.

9. The method of claim 8 , wherein the at least one strengthening rib is patterned such that there is no straight line path extending through the height or width of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib.

10. The method of claim 9 , wherein the plate structure is configured to revert to its original shape by local buckling of the at least one strengthening rib after being bent.

11. A method of fabricating a plate structure comprising:
depositing a first layer of aluminum oxide (Al 2 O 3 ) on a first side of a substrate;
depositing a layer of sacrificial layer of amorphous silicon on top of the layer of the aluminum oxide;
etching the layer of amorphous silicon to form a hexagonal honeycomb pattern;
depositing a second layer of aluminum oxide (Al 2 O 3 ) on the etched layer of amorphous silicon;
etching the second layer of aluminum oxide to at least create through holes to the layer of amorphous silicon;
removing the amorphous silicon and suspending the patterned first and second layers of aluminum oxide; and
using plasma-enhanced chemical vapor deposition to deposit a thin film on both sides of the patterned first and second layers of aluminum oxide.

12. The method of claim 11 , wherein the amorphous silicon is removed and the patterned first and second layers of aluminum oxide are suspended using at least one of XeF 2 etching or isotropic CF 4 +O 2 plasma anisotropic reactive ion etching.

13. The method of claim 11 , further comprising:
before removing the amorphous silicon, depositing an approximately 500 nm thick layer of silicon nitride on a second side of the substrate;
patterning the layer of silicon nitride to form a hard mask; and
wet-etching the patterned layer of silicon nitride until between 10-50 micrometers (“1.tm”) of the substrate remains.

14. The method of claim 11 , wherein at least one of the first layer or the second layer of aluminum oxide is at least 60 nanometers thick.

15. The method of claim 11 , wherein the layer of amorphous silicon has a thickness between 1 and 3 microns.

16. The method of claim 11 , wherein the hexagonal honeycomb pattern is formed in the layer of amorphous silicon using photolithography and anisotropic reactive ion etching.

17. The method of claim 11 , wherein the plate structure is a corrugated structure having top and bottom sides of aluminum oxide that are separated by aluminum oxide vertical walls.

18. The method of claim 11 , wherein the plate structure is configured to revert to its original shape by local buckling of the at least one vertical wall after being bent.

19. The method of claim 11 , wherein the first and second layers of aluminum oxide are deposited using conformal atomic layer deposition.

20. The method of claim 11 , wherein the formed plate structure includes at least one base plate in a first plane and a plurality of out-of-plane rib plates that form at least one strengthening rib.

21. The method of claim 11 , wherein the at least one strengthening rib is patterned such that there is no straight line path extending through the height or width of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib.

Assignees

• Univ Pennsylvania

Inventors

• Bargatin Igor
• Davami Keivan

Classifications

• H10P50/242

  of Group IV materials · CPC title

• C23C16/45525 Primary

  Atomic layer deposition [ALD] · CPC title

• C23C16/01 Primary

  on temporary substrates, e.g. substrates subsequently removed by etching · CPC title

• C23C16/12

  Deposition of aluminium only · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title