Integrated circuit package module including a bonding system

Patent metadata

Field	Value
Publication number	US-11935824-B2
Application number	US-202217665749-A
Country	US
Kind code	B2
Filing date	Feb 7, 2022
Priority date	Sep 29, 2021
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

An integrated circuit package module includes an integrated circuit package device including a contact element, and a bonding system formed on the integrated circuit package device. The bonding system includes a bonding system substrate and a bonding element formed in the bonding system substrate and conductively coupled to the contact element of the integrated circuit package device. The bonding element includes (a) a conduction component conductively connected to the contact element, the conduction component formed from a first metal having a first melting point, and (b) a bonding component formed from a second metal having a second melting point lower than the first melting point of the first metal.

First claim

The invention claimed is:

1. An integrated circuit package module, including:
an integrated circuit package device including a contact element; and
a bonding system formed on the integrated circuit package device, the bonding system including:
a bonding system substrate; and
a bonding element formed in the bonding system substrate and conductively coupled to the contact element of the integrated circuit package device, the bonding element comprising:
a conduction component conductively connected to the contact element, the conduction component formed from a first metal having a first melting point; and
a bonding component formed from a second metal having a second melting point, the second melting point lower than the first melting point.

2. The integrated circuit package module of claim 1 , wherein:
the first metal comprises copper, silver, or gold; and
the second metal comprises tin, indium, a tin alloy, or an indium alloy.

3. The integrated circuit package module of claim 1 , wherein the bonding system substrate comprises a passivation region.

4. The integrated circuit package module of claim 1 , wherein the bonding component is formed in a conduction component opening defined by the conduction component.

5. The integrated circuit package module of claim 1 , wherein an exposed surface of the bonding system opposite the integrated circuit package device includes an exposed surface of the conduction component and an exposed surface of the bonding component.

6. The integrated circuit package module of claim 1 , wherein the bonding element is formed in a via opening.

7. The integrated circuit package module of claim 1 , wherein the integrated circuit package device comprises an interposer.

8. The integrated circuit package module of claim 1 , wherein the integrated circuit package device comprises an integrated circuit die.

9. The integrated circuit package module of claim 1 , wherein:
the conduction component extends fully through a thickness of the bonding system substrate; and
the bonding component extends only partially through the thickness of the bonding system substrate.

10. The integrated circuit package module of claim 1 , wherein the bonding system includes multiple bonding elements formed in the bonding system substrate and conductively coupled to the contact element;
wherein each bonding element of the multiple bonding elements includes:
a respective conduction component conductively connected to the contact element and formed from the first metal; and
a respective bonding component formed from the second metal.

11. The integrated circuit package module of claim 1 , wherein:
the bonding system comprises a front-side bonding system formed on a front side of the integrated circuit package device; and
the integrated circuit package module further includes a back-side bonding system formed on a back side of the integrated circuit package device, wherein the back-side bonding system includes a back-side bonding element comprising:
a back-side bonding element conduction component formed from a first back-side bonding element metal having a first melting point; and
a back-side bonding element bonding component formed from a second back-side bonding element metal having a second melting point, the second melting point lower than the first melting point.

12. An integrated circuit package, comprising:
a first integrated circuit package module including:
a first integrated circuit package device including a first contact element; and
a bonding system formed on the integrated circuit package device, the bonding system including:
a bonding system substrate; and
a bonding element formed in the bonding system substrate, the bonding element comprising:
a conduction component conductively connected to the first contact element, the conduction component formed from a first metal having a first melting point; and
a bonding component formed from a second metal having a second melting point, the second melting point lower than the first melting point; and

a second integrated circuit package module bonded to the bonding system of the first integrated circuit package module such that the bonding system of the first integrated circuit package module is arranged between the second integrated circuit package module and the first integrated circuit package device of the first integrated circuit package module;
a bond between the bonding element and the second contact element of the second integrated circuit package module; and
an electrical connection between the bonding element and the second contact element of the second integrated circuit package module.

13. The integrated circuit package of claim 12 , wherein the first integrated circuit package device comprises an interposer.

14. The integrated circuit package of claim 12 , wherein the first integrated circuit package device comprises an integrated circuit die.

15. The integrated circuit package of claim 12 , wherein:
the first metal comprises copper, silver, or gold; and
the second metal comprises tin, indium, a tin alloy, or an indium alloy.

16. The integrated circuit package of claim 12 , wherein the bonding component is formed in a conduction component opening defined by the conduction component.

17. The integrated circuit package of claim 12 , wherein the bond between the bonding element and the second contact element of the second integrated circuit package module includes a bond between the bonding component of the bonding element and second contact element of the second integrated circuit package module.

18. The integrated circuit package of claim 12 , wherein the electrical connection between the bonding element and the second contact element of the second integrated circuit package module includes a conductive connection between the conduction component of the bonding element and second contact element of the second integrated circuit package module.

19. The integrated circuit package of claim 12 , wherein the electrical connection between the bonding element and the second contact element of the second integrated circuit package module includes a conductive connection between the conduction component of the bonding element and second contact element of the second integrated circuit package module via the bonding component of the bonding element.

20. An integrated circuit package, comprising:
a first integrated circuit package module, including:
a first integrated circuit package device including a first contact element; and
a first bonding system formed on the first integrated circuit package device, the first bonding system including:
a first bonding system substrate; and
a first bonding element formed in the first bonding system substrate, the first bonding element comprising:
a first conduction component conductively connected to the first contact element, the first conduction component formed from a first metal having a first melting point; and
a first bonding component formed from a second metal, the second metal having a melting point lower than the first melting point; and

a second integrated circuit package module, including:
a second integrated circuit package device including a second contact element; and
a second bonding system formed on the second integrated circuit package device, the second bonding system including:
a second bonding system substrate; and
a second bonding element formed in the second bonding system substrate, the second bonding element comprising:
a second conduction com

Assignees

• Microchip Tech Inc

Inventors

• Sato Justin
• Chen Bomy
• Leng Yaojian
• Kovats Julius

Classifications

• H10W80/00

  Direct bonding of chips, wafers or substrates · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W90/00 Primary

  Package configurations · CPC title