Silyl pseudohalides for silicon containing films

Patent metadata

Field	Value
Publication number	US-11932940-B2
Application number	US-202017096341-A
Country	US
Kind code	B2
Filing date	Nov 12, 2020
Priority date	Nov 12, 2019
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

Silyl pseudohalides having a general formula of R 4-n SiX n , where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

First claim

What is claimed is:

1. A method of depositing a silicon-containing film, the method comprising exposing a substrate to a silyl pseudohalide and a reagent to deposit the silicon-containing film, the silyl pseudohalide has a general formula of R 4-n SiX n , wherein n is 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkylamino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from selenocyanate and isoselenocyanate.

2. The method of claim 1 , wherein the silicon-containing film comprises SiO and the reagent comprises one or more of oxygen gas, ozone, water, alcohols, peroxide or plasmas thereof.

3. The method of claim 1 , wherein the silicon-containing film comprises SiN and the reagent comprises one or more of amines, alkylamines, hydrazine, alkylhydrazines, allylhydrazines and plasmas thereof.

4. The method of claim 3 , wherein the reagent further comprises a plasma of He, NH 3 , N 2 , Ar, H 2 or a combination thereof.

5. The method of claim 1 , wherein the silicon-containing film comprises SiCON and the reagent comprises one or more of alcohols, peroxide, amines, alkyl amines, hydrazine, alkylhydrazines, allylhydrazines and plasmas thereof.

6. The method of claim 5 , wherein the reagent further comprises a plasma of CO, O 2 , N 2 O, He, NH 3 , N 2 , Ar, H 2 or a combination thereof.

7. The method of claim 1 , wherein the silicon-containing film comprises carbon.

8. The method of claim 7 , wherein n is not 4.

9. The method of claim 7 , wherein the reagent comprises one or more of alcohols, water, peroxide, amines, alkyl amines, hydrazine, alkylhydrazines, allylhydrazines and plasmas thereof.

10. The method of claim 9 , wherein the reagent further comprises a plasma of CO, O 2 , N 2 O, He, NH 3 , N 2 , Ar, H 2 or a combination thereof.

11. A method of depositing a SiO-containing film, the method comprising exposing a substrate to a silyl pseudohalide and an oxidizing agent to deposit the SiN-containing film, wherein the silyl pseudohalide has a general formula of R 4-n SiX n , wherein n is 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from selenocyanate and isoselenocyanate.

12. The method of claim 11 , wherein n is not 4.

13. The method of claim 11 , wherein the oxidizing agent comprises one or more of oxygen gas, ozone, water, alcohols, peroxide or plasmas thereof.

14. The method of claim 11 , A method of depositing a SiN-containing film, the method comprising exposing a substrate to a silyl pseudohalide and a nitridating agent to deposit the SiN-containing film, wherein the silyl pseudohalide has a general formula of R 4-n SiX n , wherein n is 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from selenocyanate and isoselenocyanate.

15. The method of claim 14 , wherein n is not 4.

16. The method of claim 14 , wherein the nitridating agent comprises one or more of amines, alkylamines, hydrazine, alkylhydrazines, allylhydrazines and plasmas thereof.

17. The method of claim 16 , wherein the nitridating agent further comprises a plasma of He, NH 3 , N 2 , Ar, H 2 or a combination thereof.

Assignees

• Applied Materials Inc

Inventors

• Woods Keenan N
• Trinh Cong
• Saly Mark
• Balseanu Mihaela A
• Maldonado-Garcia Maribel
• Enman Lisa J

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title