Precursors for the production of thin oxide layers and the use thereof

Patent metadata

Field	Value
Publication number	US-2016208386-A1
Application number	US-201414915330-A
Country	US
Kind code	A1
Filing date	Aug 4, 2014
Priority date	Sep 3, 2013
Publication date	Jul 21, 2016
Grant date	—

Abstract

The present invention relates to novel precursors in the form of metal complexes with 2-substituted 1,3-diketones and to a process for the preparation thereof. The invention furthermore relates to the use thereof for the production of thin metal-oxide layers. The latter are constituents in a very wide variety of electronic components and devices having various functions.

First claim

1 . Metal complex with 2-functionalised 1,3-diketones of the general formula (I)
M l [R 1 —CO—C(H) m X—CO—R 2 ] n ,   (I)
in which M denotes a metal atom selected from the group zinc, indium, gallium, tin, aluminium, zirconium, titanium and hafnium, l denotes 1 or 2, m denotes 0 or 1, n denotes 1, 2, 3 or 4, R 1 and R 2 , independently of one another, denote alkyl having 1 to 8 C atoms, cycloalkyl having 3 to 7 C atoms, alkoxy having 1 to 8 C atoms and/or amino, NHR 3 or NR 3 R 4 , where R 3 and R 4 , independently of one another, denote alkyl having 1 to 8 C atoms or cycloalkyl having 3 to 7 C atoms, and X denotes hydroxyimino, nitro, sulfo, including —SO 2 -alkyl having 1 to 8 C atoms, phosphato, including —PO(O—R) 2 , where R=alkyl having 1 to 8 C atoms or alkoxy having 1 to 8 C atoms; stannyl —SnR 3 , where R=alkyl having 1 to 8 C atoms; mercapto —SR, where R═H, alkyl having 1 to 8 C atoms or cycloalkyl having 3 to 7 C atoms, halide, such as F, Cl, Br or I, or pseudohalide, such as —CN, —N 3 , —OCN, —NCO, —CNO, —SCN or —SeCN.

2 . Metal complex according to claim 1 , characterised in that R 1 and R 2 , independently of one another, denote methyl, ethyl, propyl, butyl, pentyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, methoxy, ethoxy, propoxy or amino.

3 . Metal complex according to claim 1 , characterised in that X denotes hydroxyimino, nitro, sulfo, including —SO 2 -alkyl having 1 to 8 C atoms, halide, such as F, Cl, Br or I, or pseudohalide, such as —CN, —N 3 , —OCN, —NCO, —CNO, —SCN or —SeCN.

4 . Metal complex according to claim 1 , characterised in that it is a compound selected from the group nitrodimethyl malonate, hydroxyimino-dimethyl malonate and nitromalonic acid diamide.

5 . Metal-complex cluster, formed from at least two metal-complex molecules of the general formula (I) according to claim 1 in which l is a number≧2 and n>2.

6 . Process for the production of thin metal-oxide layers, characterised in that
one or more metal complex(es) according to claim 1 or metal complex cluster(s) is (are) dissolved or dispersed in a suitable solvent or solvent mixture, the solution or dispersion obtained, to which further additives selected from the group liquefiers, stabilisers, binders and antifoams have optionally been added, is applied by means of wet coating to a substrate surface to be coated, dried, and the applied layer is converted into a metal oxide in the form of a thin layer in a further step by means of heating in an oven, on a hotplate or by means of irradiation by UV, IR or laser.

7 . Process according to claim 6 , characterised in that the solution or dispersion comprising the metal complex comprises a solvent selected from the group methoxyethanol, dimethylformamide and dimethoxyethane, in pure form or in a mixture, optionally in the presence of water.

8 . Process according to claim 6 , characterised in that the solution or dispersion comprising the metal complex is applied to the substrate surface by means of spin coating, dip coating, spray coating, ink-jet printing, flexographic printing or gravure printing.

9 . Process according to claim 6 , characterised in that the conversion of the applied, dried metal-complex layer is carried out by heating and calcination at temperatures in the range from 150-350° C.

10 . Process according to claim 6 , characterised in that thin oxide layers of the metals zinc, indium, gallium, tin, aluminium, zirconium, titanium and hafnium are produced in which the oxides are present in pure form or in a mixture, or as mixed oxides.

11 . Process according to claim 6 , characterised in that the solution or dispersion is applied a number of times to the substrate surface before the heating and calcination, with each layer being dried and heated individually.

12 . Thin ceramic metal-oxide layers in electronic components, such as capacitors or thin-film transistors, comprising a metal complex according to claim 1 .

13 . Thin metal-oxide layers in photovoltaics and semiconductor technology, comprising a metal complex according to claim 1 .

14 . Thin metal-oxide layers as antiscratch or antireflection layers, comprising a metal complex according to claim 1 .

15 . Thin metal-oxide layers in solar cells, flat-panel screens and touch screens, or as contacts, conductors, semiconductors and dielectrics in field-effect transistors comprising a metal complex according to claim 1 .

Assignees

• Merck Patent Gmbh

Inventors

• Bonrad Klaus
• Schneider Joerg
• Hoffman Rudolf
• Kaloumenos Mareiki

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title