Electrostatic discharge protection circuit having a metal connection and method for manufacturing the electrostatic discharge protection circuit

Patent metadata

Field	Value
Publication number	US-11929305-B2
Application number	US-202117532446-A
Country	US
Kind code	B2
Filing date	Nov 22, 2021
Priority date	Nov 23, 2020
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.

First claim

What is claimed is:

1. A method, comprising:
forming a first electrostatic discharge protection device structure in a first area on a front side of a semiconductor substrate;
forming a first contact pad on the first electrostatic discharge protection device structure and a second contact pad in a second area on the front side of the semiconductor substrate;
thinning the semiconductor substrate from a back side of the semiconductor substrate;
forming a metal connection connecting the first electrostatic discharge protection device structure to the second area; and
providing a carrier material to the back side of the semiconductor substrate after forming the metal connection.

2. The method of claim 1 , wherein providing the carrier material comprises molding the carrier material on the back side of the semiconductor substrate.

3. The method of claim 1 , wherein the metal connection covers only part of an area of the first electrostatic discharge protection device structure in a cross-sectional view.

4. The method of claim 1 , wherein the first electrostatic discharge protection device structure comprises a Zener diode structure.

5. The method of claim 1 , wherein the metal connection is electrically coupled to the second contact pad.

6. The method of claim 1 , further comprising forming a second electrostatic discharge protection device structure between the metal connection and the second contact pad.

7. The method of claim 1 , wherein forming the first electrostatic discharge protection device structure comprises forming one or more highly doped layers by diffusion doping or by implantation.

8. The method of claim 1 , further comprising:
forming a third electrostatic discharge protection device structure in the second area; and
forming a further metal connection between the third electrostatic discharge protection device structure and the first area.

9. The method of claim 8 , wherein the third electrostatic discharge protection device structure is a same type of device structure as the first electrostatic discharge protection device structure.

10. The method of claim 9 , further comprising forming a fourth electrostatic discharge protection device structure between the further metal connection and the fourth contact pad.

11. The method of claim 1 , further comprising, during front side processing, removing semiconductor material between the first area and the second area.

Assignees

• Infineon Technologies Ag

Inventors

• Schmenn Andre
• Diefenbeck Klaus
• Willemen Joost Adriaan

Classifications

• H10W74/01

  Manufacture or treatment · CPC title

• H10W20/40 Primary

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10D89/611

  using diodes as protective elements · CPC title

• H10D89/921 Primary

  characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title