Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma

Patent metadata

Field	Value
Publication number	US-11920239-B2
Application number	US-202217649020-A
Country	US
Kind code	B2
Filing date	Jan 26, 2022
Priority date	Mar 26, 2015
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

First claim

What is claimed is:

1. A method of conditioning a reaction chamber used to perform remote plasma processing, the method comprising:
forming a low recombination material coating on exposed surfaces within the reaction chamber while no substrate is present in the reaction chamber, wherein the low recombination material coating exhibits a recombination rate for hydrogen radicals in the reaction chamber with a recombination probability of about 5E-4 or less, wherein the low recombination material coating comprises an oxide material, wherein the low recombination material coating has an average thickness between about 50 Å and about 500 Å;
providing a substrate in the reaction chamber;
flowing a silicon-containing precursor into the reaction chamber through an inlet;
generating a hydrogen plasma in a remote plasma chamber to form the hydrogen radicals;
flowing the hydrogen radicals into the reaction chamber through a gas distributor, wherein the hydrogen radicals react with the silicon-containing precursor to deposit a silicon-containing film on the substrate; and
after depositing the silicon-containing film on the substrate, exposing the reaction chamber to an oxidizing plasma to recondition the exposed surfaces within the reaction chamber and thereby reform the low recombination material coating.

2. The method of claim 1 , wherein the low recombination material coating is formed through an atomic layer deposition (ALD) process.

3. The method of claim 1 , wherein the reaction chamber is exposed to the oxidizing plasma for a duration between 0.05 seconds and 5 seconds.

4. The method of claim 1 , wherein the oxide material comprises silicon oxide.

5. The method of claim 1 , wherein forming the low recombination material coating on the exposed surfaces within the reaction chamber comprises:
(a) flowing a first reactant into the reaction chamber and allowing the first reactant to adsorb onto the exposed surfaces within the reaction chamber;
(b) purging the first reactant from the reaction chamber;
(c) flowing a second reactant into the reaction chamber;
(d) exposing the exposed surfaces within the reaction chamber to plasma to drive a surface reaction between the first reactant and the second reactant to form the low recombination material coating on the exposed surfaces within the reaction chamber; and
(e) repeating (a)-(d) until the low recombination material coating reaches a final coating thickness.

6. The method of claim 1 , wherein the silicon-containing precursor comprises one or more silicon-hydrogen bonds and/or silicon-silicon bonds.

7. The method of claim 1 , wherein the silicon-containing precursor is flowed into the reaction chamber without exposure to an active plasma.

8. The method of claim 1 , wherein the reaction chamber is maintained at a pressure between 0.2 Torr and 8 Torr during deposition of the silicon-containing film, and the substrate is maintained at a temperature between 50° C. and 500° C. during deposition of the silicon-containing film.

9. The method of claim 1 , wherein the remote plasma chamber is configured to generate the hydrogen plasma by capacitively coupled plasma generation.

10. The method of claim 1 , further comprising:
after forming the low recombination coating, forming a second coating on at least a portion of the exposed surfaces within the reaction chamber during deposition of the silicon-containing film, wherein the second coating is a different material than the low recombination material coating.

11. The method of claim 10 , further comprising:
exposing the reaction chamber to an oxidizing plasma to modify the second coating to reform the low recombination material coating by promoting the formation of the oxide material.

12. The method of claim 1 , wherein the silicon-containing film comprises silicon carbide, silicon nitrocarbide, or silicon oxycarbide.

13. A method of conditioning a reaction chamber used to perform remote plasma processing, the method comprising:
forming an oxide coating on exposed surfaces within the reaction chamber through an atomic layer deposition process while no substrate is present in the reaction chamber, wherein the oxide coating has an average thickness between about 50 Å and about 500 Å; and
after performing a remote plasma operation on a substrate, exposing the reaction chamber to an oxidizing plasma to recondition the exposed surfaces within the reaction chamber and thereby reform the oxide coating.

14. The method of claim 13 , further comprising:
flowing a silicon-containing precursor into the reaction chamber through an inlet;
generating a plasma in a remote plasma chamber to form radicals, wherein the remote plasma chamber is separate from the reaction chamber and fluidly coupled with the reaction chamber via a gas distributor; and
flowing the radicals into the reaction chamber through the gas distributor, wherein the radicals react with the silicon-containing precursor to deposit a silicon-containing film on the substrate.

15. The method of claim 14 , wherein the silicon-containing precursor comprises one or more silicon-hydrogen bonds and/or silicon-silicon bonds, and the remote plasma chamber is configured to generate the plasma by capacitively coupled plasma generation.

Assignees

• Lam Res Corp

Inventors

• Varadarajan Bhadri N
• Gong Bo
• Batzer Rachel E
• Qiu Huatan
• Van Schravendijk Bart J
• Hohn Geoffrey

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P72/0471 Primary

  comprising at least one ion or electron beam chamber · CPC title

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title