Methods of fabricating OLED panel with inorganic pixel encapsulating barrier
US-11476313-B2 · Oct 18, 2022 · US
US11910657B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11910657-B2 |
| Application number | US-202318346059-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 30, 2023 |
| Priority date | Sep 4, 2020 |
| Publication date | Feb 20, 2024 |
| Grant date | Feb 20, 2024 |
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Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.
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What is claimed is: 1. A device, comprising: a substrate; inorganic overhang structures, the inorganic overhang structures having an upper portion having a bottom surface wider than a top surface of a lower portion; and a plurality of sub-pixels, each sub-pixel comprising: an anode; an organic light-emitting diode (OLED) material disposed over the anode; a cathode disposed over the OLED material, extending under the inorganic overhang structures adjacent to each sub-pixel, the cathode directly contacts a layer of a conductive material disposed under the lower portion; and an encapsulation layer disposed over the cathode, wherein the encapsulation layer extends under at least a portion of the inorganic overhang structures along a sidewall of the lower portion, and contacts the bottom surface of the upper portion of the inorganic overhang structures. 2. The device of claim 1 , wherein the encapsulation layer further extends along a sidewall of the upper portion. 3. The device of claim 2 , wherein the encapsulation layer further extends along an upper surface of the upper portion. 4. The device of claim 1 , wherein the upper portion includes an underside edge extending past a sidewall of the lower portion. 5. The device of claim 4 , wherein the encapsulation layer further extends along the underside edge of the upper portion. 6. The device of claim 1 , wherein the device comprises a dot-type architecture or a line-type architecture. 7. The device of claim 1 , further comprising a global passivation layer disposed over the inorganic overhang structures and the encapsulation layer. 8. A device, comprising: a substrate; inorganic overhang structures, the inorganic overhang structures having an upper portion having a bottom surface wider than a top surface of a lower portion, the bottom surface of the upper portion is planar to the top surface of the lower portion; and a plurality of sub-pixels, each sub-pixel comprising: an anode; an organic light-emitting diode (OLED) material disposed over the anode; a cathode disposed over the OLED material, extending under the inorganic overhang structures adjacent to each sub-pixel, the cathode directly contacts a layer of a conductive material disposed under the lower portion; and an encapsulation layer disposed over the cathode, wherein the encapsulation layer extends under at least a portion of the inorganic overhang structures along a sidewall of the lower portion, and contacts the bottom surface of the upper portion of the inorganic overhang structures. 9. The device of claim 8 , wherein the encapsulation layer further extends along a sidewall of the upper portion. 10. The device of claim 9 , wherein the encapsulation layer further extends along an upper surface of the upper portion. 11. The device of claim 8 , wherein the upper portion includes an underside edge extending past a sidewall of the lower portion. 12. The device of claim 11 , wherein the encapsulation layer further extends along the underside edge of the upper portion. 13. The device of claim 8 , wherein the device comprises a dot-type architecture or a line-type architecture. 14. The device of claim 8 , further comprising a global passivation layer disposed over the inorganic overhang structures and the encapsulation layer. 15. A device, comprising: a substrate; inorganic overhang structures, wherein each of the inorganic overhang structures comprises: a lower portion; and an upper portion, the upper portion including first and second extensions extending laterally past first and second sidewalls of the lower portion, respectively; and a first sub-pixel comprising: a first anode; a first organic light-emitting diode (OLED) material disposed over the first anode; a first cathode disposed over the first OLED material, extending under the first extension of the upper portion, the first cathode directly contacts a layer of a conductive material disposed under the lower portion; and a first encapsulation layer disposed over the first cathode, wherein the first encapsulation layer extends to contact the lower portion of a first inorganic overhang structure at a first sidewall, to contact the upper portion of the first inorganic overhang structure at a first underside surface of the first extension, and extends over at least a first portion of a top surface of the upper portion of the first inorganic overhang structure. 16. The device of claim 15 , wherein the first encapsulation layer further extends along a sidewall of the upper portion. 17. The device of claim 16 , wherein the first encapsulation layer further extends along an upper surface of the upper portion. 18. The device of claim 15 , wherein the upper portion includes an underside edge extending past a sidewall of the lower portion. 19. The device of claim 18 , wherein the first encapsulation layer further extends along the underside edge of the upper portion. 20. The device of claim 15 , further comprising a global passivation layer disposed over the inorganic overhang structures and the first encapsulation layer. 21. The device of claim 1 , wherein the layer is disposed above a PDL structure disposed over the substrate. 22. The device of claim 8 , wherein the layer is disposed above a PDL structure disposed over the substrate. 23. The device of claim 15 , wherein the layer is disposed above a PDL structure disposed over the substrate.
Encapsulations · CPC title
Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title
Passivation; Containers; Encapsulations · CPC title
Encapsulations · CPC title
comprising structures specially adapted for lowering the resistance · CPC title
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