Light-emitting device

Patent metadata

Field	Value
Publication number	US-11908973-B2
Application number	US-202117448550-A
Country	US
Kind code	B2
Filing date	Sep 23, 2021
Priority date	Sep 25, 2020
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

A light-emitting devise includes first and second type semiconductor layers, an active layer interposed therebetween, a current blocking layer disposed on the first type semiconductor layer and including a first strip portion, and a first electrode disposed on the current blocking layer and including a first electrode pad, a first electrode end portion distal from the first electrode pad, and a first electrode extension portion extending between the first electrode pad and the first electrode end portion. The first strip portion of the current blocking layer is located beneath the first electrode extension portion, and has a widened section having a width that gradually increases in a direction away from the first electrode pad.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a first type semiconductor layer;
a second type semiconductor layer;
an active layer disposed between said first type semiconductor layer and said second type semiconductor layer;
a current blocking layer that is disposed on said first type semiconductor layer to expose a portion of said first type semiconductor layer, said current blocking layer including a first strip portion; and
a first electrode that is disposed on said current blocking layer and that includes a first electrode pad, a first electrode end portion distal from said first electrode pad, and a first electrode extension portion extending between said first electrode pad and said first electrode end portion,
wherein said first strip portion of said current blocking layer is located beneath said first electrode extension portion and has a widened section having a width that gradually increases in a direction away from said first electrode pad,
wherein said first strip portion of said current blocking layer further includes a pad-proximal section that is connected to said widened section and that is more proximal to said first electrode pad than said widened section, said pad-proximal section having a width W 3 larger than a width W 1 of a part of said first electrode extension portion positioned there above, said widened section having a width W 4 lamer than a width W 2 of a part of said first electrode extension portion positioned there above, a first width difference between the width W 3 and the width W 1 being less than a second width difference between the width W 4 and the width W 2 , and
wherein said second type semiconductor layer has a portion exposed from said first type semiconductor layer and said active layer, said light-emitting device further including a transparent conductive layer that is disposed on said exposed portion of said first type semiconductor layer and that is partially disposed between said current blocking layer and said first electrode; and a second electrode disposed on said exposed portion of said second type semiconductor layer.

2. The light-emitting device of claim 1 , wherein the first width difference is constant.

3. The light-emitting device of claim 1 , wherein the first width difference is not less than 5 μm and is up to 20 μm.

4. The light-emitting device of claim 1 , wherein the second width difference is at least 1 μm larger than the first width difference.

5. The light-emitting device of claim 1 , wherein the second width difference gradually increases in the direction away from said first electrode pad.

6. The light-emitting device of claim 1 , wherein the second width difference gradually increases and then remains fixed in the direction away from said first electrode pad.

7. The light-emitting device of claim 1 , wherein said first electrode extension portion includes a straight section that is connected to said first electrode pad and said first electrode end portion, said widened section of said first strip portion of said current blocking layer being located beneath said straight section.

8. The light-emitting device of claim 1 , wherein said first electrode extension portion includes a straight section extending from said first electrode pad, and a curved section that extends from said straight section and that is connected to said first electrode end portion, said widened section of said first strip portion of said current blocking layer being located beneath said curved section.

9. The light-emitting device of claim 8 , wherein at least one of said straight section and said curved section has a fixed width.

10. The light-emitting device of claim 8 , wherein at least one of said straight section and said curved section has a width that gradually decreases in the direction away from said first electrode pad.

11. The light-emitting device of claim 8 , wherein said widened section of said first strip portion of said current blocking layer is further located beneath a portion of said straight section of said first electrode extension portion.

12. The light-emitting device of claim 11 , wherein said widened section of said first strip portion of said current blocking layer is further located beneath a position ranging from one half to one fourth of said straight section of said first electrode extension portion.

13. The light-emitting device of claim 11 , wherein said widened section having a width that gradually increases in the direction away from said first electrode pad at position corresponding to said straight section of said first electrode extension portion and that remains fixed in the direction away from said first electrode pad at position corresponding to said curved section of said first electrode extension portion.

14. The light-emitting device of claim 1 , wherein said first electrode extension portion includes a straight section that extends from said first electrode pad and a fold-line section that extends from said straight section and that is connected to said first electrode end portion, said widened section of said first strip portion of said current blocking layer being located beneath said fold-line section.

15. The light-emitting device of claim 14 , wherein at least one of said straight section and said fold-line section has a fixed width.

16. The light-emitting device of claim 14 , wherein said widened section of said first strip portion of said current blocking layer is located beneath a portion of said straight section of said first electrode extension portion.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Yang Renlong
• Zhang Ping

Classifications

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/831 Primary

  characterised by their shape · CPC title

• H10H20/816 Primary

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/83

  Electrodes · CPC title