Light emitting diode and light emitting device having the same

Patent metadata

Field	Value
Publication number	US-10923642-B2
Application number	US-201916426103-A
Country	US
Kind code	B2
Filing date	May 30, 2019
Priority date	May 30, 2018
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.

First claim

What is claimed is:

1. A light emitting diode comprising:
an n-type semiconductor layer;
a mesa disposed on the n-type semiconductor layer to expose a portion of the n-type semiconductor layer, the mesa comprising an active layer and a p-type semiconductor layer disposed on the active layer;
a first bonding pad electrically connected to the n-type semiconductor layer;
a second bonding pad electrically connected to the p-type semiconductor layer; and
a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad,
wherein:
the first insulation layer covers a first portion of the p-type semiconductor layer disposed between the second bonding pad and the exposed portion of the n-type semiconductor layer;
the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer; and
the mesa has a side surface including a first portion covered with the first insulation layer and a second portion exposed by the first insulation layer, the second portion of the mesa having a greater area than the first portion of the mesa.

2. The light emitting diode according to claim 1 , wherein the first insulation layer is disposed closer to the exposed portion of the n-type semiconductor layer than the second bonding pad.

3. The light emitting diode according to claim 2 , wherein the first insulation layer partially covers the exposed portion of the n-type semiconductor layer.

4. The light emitting diode according to claim 1 , wherein the first insulation layer has a greater length than the second bonding pad.

5. The light emitting diode according to claim 4 , wherein the first insulation layer continuously surrounds three sides of the second bonding pad in plan view.

6. The light emitting diode according to claim 1 , wherein:
the mesa has an elongated shape;
the second bonding pad is disposed near a distal end of the mesa at one side thereof in a longitudinal direction of the mesa to oppose the first bonding pad; and
the first insulation layer partially covers a second portion of the p-type semiconductor layer between the second bonding pad and the distal end of the mesa.

7. The light emitting diode according to claim 6 , wherein the first insulation layer covers the side surface of the mesa near the distal end thereof and the exposed portion of the n-type semiconductor layer.

8. The light emitting diode according to claim 6 , wherein the first insulation layer extends from a portion near the distal end of the mesa along an edge of the mesa in the longitudinal direction.

9. The light emitting diode according to claim 8 , wherein a length of the first insulation layer extending along the longitudinal direction is greater than a width of the second bonding pad and less than ½ of a maximum length of the mesa.

10. The light emitting diode according to claim 1 , wherein:
the mesa comprises a groove formed through the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer; and
the first insulation layer covers a portion of the p-type semiconductor layer disposed between the groove and the second bonding pad.

11. The light emitting diode according to claim 1 , further comprising a second insulation layer spaced apart from the first insulation layer,
wherein:
the mesa comprises a groove formed through the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer; and
the second insulation layer covers a portion of the p-type semiconductor layer disposed between the groove and the second bonding pad.

12. The light emitting diode according to claim 11 , wherein the second insulating layer covers a portion of a sidewall of the groove.

13. The light emitting diode according to claim 1 , further comprising a transparent electrode forming ohmic contact with the p-type semiconductor layer,
wherein the second bonding pad is disposed on the transparent electrode to be electrically connected to the transparent electrode.

14. The light emitting diode according to claim 13 , wherein the transparent electrode covers a portion of the first insulation layer.

15. A light emitting diode comprising:
an n-type semiconductor layer;
a mesa disposed on the n-type semiconductor layer to expose a portion of the n-type semiconductor layer, the mesa comprising an active layer and a p-type semiconductor layer disposed on the active layer;
a first bonding pad electrically connected to the n-type semiconductor layer;
a second bonding pad electrically connected to the p-type semiconductor layer;
a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad; and
a transparent electrode forming ohmic contact with the p-type semiconductor layer and covering a portion of the first insulation layer,
wherein:
the first insulation layer covers a first portion of the p-type semiconductor layer disposed between the second bonding pad and the exposed portion of the n-type semiconductor layer, and is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer;
the second bonding pad is disposed on the transparent electrode to be electrically connected to the transparent electrode;
the transparent electrode and the first insulation layer overlaps each other in a first width, and the transparent electrode is spaced apart from an edge of the p-type semiconductor layer by a second width;
the first width is greater than the second width w 2 ; and
the first width w 1 is equal to or less than 10 μm.

16. The light emitting diode according to claim 15 , wherein the first width is 5 μm and the second width is 4 μm.

17. The light emitting diode according to claim 15 , further comprising a first extension extending from the first bonding pad and electrically connected to the n-type semiconductor layer through holes formed in the first insulation layer.

18. The light emitting diode according to claim 15 , further comprising a first extension extending from the first bonding pad,
wherein the first insulation layer comprises a plurality of islands spaced apart from each other, the first extension being electrically connected to the n-type semiconductor layer between the islands.

19. The light emitting diode according to claim 13 , wherein a portion of the first insulation layer covers the transparent electrode.

20. The light emitting diode according to claim 13 , wherein a side surface of the first insulation layer and a side surface of the transparent electrode are disposed to face each other.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Woo Sang Won
• Kim Ye Seul
• Park Tae Jun
• Suh Duk Il

Classifications

• H10H20/83

  Electrodes · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/833

  Transparent materials · CPC title