Light-emitting device

Patent metadata

Field	Value
Publication number	US-9530934-B1
Application number	US-201514977686-A
Country	US
Kind code	B1
Filing date	Dec 22, 2015
Priority date	Dec 22, 2015
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A light-emitting device includes a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode includes a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion includes a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a semiconductor stack;
a pad electrode comprising a periphery disposed on the semiconductor stack; and
a finger electrode connected to the pad electrode,
wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc comprising a first curvature radius, and the first curvature radius is larger than 10 μm.

2. The semiconductor light-emitting device of claim 1 , wherein the second side comprises a second arc having a second curvature radius, and the second curvature radius is larger than 10 μm.

3. The semiconductor light-emitting device of claim 2 , wherein the first curvature radius and the second curvature radius are respectively larger than 15 μm.

4. The semiconductor light-emitting device of claim 2 , wherein the first curvature radius and the second curvature radius are respectively smaller than 30 μm.

5. The semiconductor light-emitting device of claim 2 , wherein the first curvature radius is same as the second curvature radius.

6. The semiconductor light-emitting device of claim 2 , wherein the first curvature radius is different from the second curvature radius.

7. The semiconductor light-emitting device of claim 1 , wherein the first side of the first portion is directly connected to the periphery of the pad electrode, the periphery of the pad electrode comprises a third curvature radius larger than the first curvature radius.

8. The semiconductor light-emitting device of claim 1 , wherein the first side of the first portion is directly connected to the periphery of the pad electrode, the periphery of the pad electrode comprises a third curvature radius different from the first curvature radius.

9. The semiconductor light-emitting device of claim 1 , wherein the periphery of the pad electrode comprises a third curvature, a curvature center of the first curvature or the second curvature does not coincide with a curvature center of the third curvature.

10. The semiconductor light-emitting device of claim 1 , wherein one end of the first portion of the finger electrode connected to the pad electrode comprises a width larger than that of another end of the first portion connected to the second portion of the finger electrode.

11. The semiconductor light-emitting device of claim 1 , wherein one end of the second portion of the finger electrode connected to the first portion of the finger electrode comprises a width substantially same as that of another end of the second portion away from the first portion of the finger electrode.

12. The semiconductor light-emitting device of claim 1 , wherein the periphery of the pad electrode comprises circle or rectangular.

13. The semiconductor light-emitting device of claim 12 , wherein the rectangular comprises a curve corner.

14. The semiconductor light-emitting device of claim 1 , wherein the pad electrode comprises a single curvature radius.

15. The semiconductor light-emitting device of claim 1 , wherein the pad electrode comprises multiple curvature radii.

16. The semiconductor light-emitting device of claim 1 , wherein one end of the first arc touches the periphery of the pad electrode, and another end of the first arc touches an edge of the second portion.

17. The semiconductor light-emitting device of claim 1 , wherein the first portion of the finger electrode comprises a thickness or a width gradually decreases from the periphery of the pad electrode to the second portion of the finger electrode.

18. The semiconductor light-emitting device of claim 1 , further comprising a current blocking region formed between the pad electrode and the semiconductor stack, wherein the current blocking region is enclosed by a periphery, the first portion comprises one part formed on the current blocking region and another part formed on the semiconductor stack.

19. The semiconductor light-emitting device of claim 1 , further comprising a current blocking region formed between the pad electrode and the semiconductor stack, wherein the current blocking region comprises an opening to expose the semiconductor stack, the first portion is formed beyond the opening.

20. The semiconductor light-emitting device of claim 1 , comprising a positive correlation between the EOS endurance and the first curvature radius.

Assignees

• Epistar Corp

Inventors

• Chou Chien-Hua
• Wang Tai-Chun
• Chen Biau-Dar
• Su Chih-Tsung

Classifications

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/8162 Primary

  Current-blocking structures · CPC title

• H10H20/831 Primary

  characterised by their shape · CPC title

• H01L33/38 Primary

  Electricity · mapped topic

• H01L33/145

  Electricity · mapped topic