Ion beam implantation method and semiconductor device

Patent metadata

Field	Value
Publication number	US-11908694-B2
Application number	US-202017127309-A
Country	US
Kind code	B2
Filing date	Dec 18, 2020
Priority date	Dec 20, 2019
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

First claim

What is claimed is:

1. An ion beam implantation method, comprising:
orienting a substrate to a target axis, wherein a residual angular misalignment exists between the target axis and a preselected crystal channel direction in the substrate and is within an angular tolerance interval, wherein a channel acceptance width is effective for the preselected crystal channel direction;
determining an implant angle range, for dopant ion implantation, that is greater than 80%, and smaller than 500%, of a sum of (i) the channel acceptance width and (ii) twofold the angular tolerance interval that the residual angular misalignment is within; and
implanting, at implant angles within the implant angle range and through a first substrate main surface of the substrate, dopant ions into the substrate using an ion beam propagating along an ion beam axis, wherein:
the implant angles are between the ion beam axis and the target axis; and
the ion beam impinges in a same sub-region of the first substrate main surface for the implant angles at which the dopant ions are implanted.

2. The method according to claim 1 , wherein:
the ion beam continuously sweeps the implant angle range at least once to implant the dopant ions into the substrate.

3. The method according to claim 1 , wherein:
implanting the dopant ions comprises performing nmax implant sub-processes at nmax different implant angles;
the implant angles comprise the nmax different implant angles; and
nmax is at least 2.

4. The method according to claim 3 , wherein:
the nmax different implant angles are equally spaced.

5. The method according to claim 3 , wherein:
the nmax implant sub-processes comprise one or more implant sub-process pairs; and
implant angles of an implant sub-process pair of the one or more implant sub-process pairs are symmetric with respect to the target axis.

6. The method according to claim 3 , wherein:
at least one of the nmax different implant angles deviates by at most 0.3 degrees from 0 degrees.

7. The method according to claim 3 , wherein:
neighboring implant angles of the nmax different implant angles differ from each other by at most 0.5 degrees.

8. The method according to claim 1 , wherein:
the implant angle range is at most 6 degrees.

9. The method according to claim 1 , comprising:
determining an angular deviation between a lateral target direction and a lateral major crystal direction in the substrate; and
prior to implanting the dopant ions, aligning the lateral major crystal direction to the lateral target direction based upon the angular deviation.

10. An ion beam implantation method, comprising: orienting a substrate to a target axis, wherein a residual angular misalignment exists between the target axis and a preselected crystal channel direction in the substrate and is within an angular tolerance interval, wherein a channel acceptance width is effective for the preselected crystal channel direction; determining an implant angle range, for dopant ion implantation, that is greater than 80%, and smaller than 500%, of a sum of (i) the channel acceptance width and (ii) twofold the angular tolerance interval that the residual angular misalignment is within; aligning a lateral major crystal direction in the substrate based upon an angular deviation; and implanting, at implant angles within the implant angle range and through a first substrate main surface of the substrate, dopant ions into the substrate using an ion beam propagating along an ion beam axis, wherein: the implant angles are between the ion beam axis and the target axis; and the ion beam impinges in a same sub-region of the first substrate main surface for the implant angles at which the dopant ions are implanted.

11. The method according to claim 10 , wherein: the ion beam continuously sweeps the implant angle range at least once to implant the dopant ions into the substrate.

12. The method according to claim 10 , wherein: implanting the dopant ions comprises performing nmax implant sub-processes at nmax different implant angles; the implant angles comprise the nmax different implant angles; and nmax is at least 2.

13. The method according to claim 12 , wherein: the nmax different implant angles are equally spaced.

14. The method according to claim 12 , wherein: the nmax implant sub-processes comprise one or more implant sub-process pairs; and implant angles of an implant sub-process pair of the one or more implant sub-process pairs are symmetric with respect to the target axis.

15. The method according to claim 12 , wherein: at least one of the nmax different implant angles deviates by at most 0.3 degrees from 0 degrees.

16. An ion beam implantation method, comprising: orienting a substrate to a target axis, wherein a residual angular misalignment exists between the target axis and a preselected crystal channel direction in the substrate and is within an angular tolerance interval, wherein a channel acceptance width is effective for the preselected crystal channel direction; determining an implant angle range, for dopant ion implantation, that is greater than 80%, and smaller than 500%, of a sum of (i) the channel acceptance width and (ii) twofold the angular tolerance interval that the residual angular misalignment is within; aligning a lateral major crystal direction in the substrate; and implanting, at implant angles within the implant angle range and through a first substrate main surface of the substrate, dopant ions into the substrate using an ion beam propagating along an ion beam axis, wherein: the implant angles are between the ion beam axis and the target axis; and the ion beam impinges in a same sub-region of the first substrate main surface for the implant angles at which the dopant ions are implanted.

17. The method according to claim 16 , wherein: the ion beam continuously sweeps the implant angle range at least once to implant the dopant ions into the substrate.

18. The method according to claim 16 , wherein: implanting the dopant ions comprises performing nmax implant sub-processes at nmax different implant angles; the implant angles comprise the nmax different implant angles; and nmax is at least 2.

19. The method according to claim 18 , wherein: the nmax different implant angles are equally spaced.

20. The method according to claim 18 , wherein: the nmax implant sub-processes comprise one or more implant sub-process pairs; and implant angles of an implant sub-process pair of the one or more implant sub-process pairs are symmetric with respect to the target axis.eam axis and the target axis; and the ion beam impinges in a same sub-region of the first substrate main surface for the implant angles at which the dopant ions are implanted.

Assignees

• Infineon Technologies Ag

Inventors

• Jelinek Moriz
• Hell Michael
• Leendertz Caspar
• Mletschnig Kristijan Luka
• Schulze Hans-Joachim

Classifications

• H10P30/2042 Primary

  into crystalline silicon carbide · CPC title

• H10P30/212

  Through-implantation · CPC title

• H10P30/204 Primary

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P30/20 Primary

  into semiconductor materials, e.g. for doping · CPC title