Power schottky diodes having local current spreading layers and methods of forming such devices

Patent metadata

Field	Value
Publication number	US-9929284-B1
Application number	US-201615349092-A
Country	US
Kind code	B1
Filing date	Nov 11, 2016
Priority date	Nov 11, 2016
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A Schottky diode includes a drift region doped with dopants having a first conductivity type, first and second blocking junctions that are doped with dopants having a second conductivity type in an upper portion of the drift region, first and second local current spreading layers doped with dopants having the first conductivity type underneath the respective first and second blocking junctions, and first and second contacts on respective lower and upper portions of the drift region. A channel is provided in the upper portion of the drift region between the first and second blocking junctions, the channel doped with dopants having the first conductivity type and a concentration of dopants in at least a first portion of the channel being lower than the concentration of dopants in the first and second local current spreading layers.

First claim

That which is claimed is:

1. A Schottky diode, comprising:
a drift region having an upper portion and a lower portion, at least some of the drift region doped with dopants having a first conductivity type;
a first blocking junction and a second blocking junction in the upper portion of the drift region, the first and second blocking junctions doped with dopants having a second conductivity type, the second conductivity type being opposite the first conductivity type;
a first local current spreading layer underneath the first blocking junction and a second local current spreading layer underneath the second blocking junction, the first and second local current spreading layers doped with dopants having the first conductivity type;
a first contact on the upper portion of the drift region;
a second contact on the lower portion of the drift region and vertically spaced apart from the first contact; and
a channel in the upper portion of the drift region between the first and second blocking junctions, the channel doped with dopants having the first conductivity type and a concentration of dopants in at least a first portion of the channel being lower than the concentration of dopants in the first and second local current spreading layers.

2. The Schottky diode of claim 1 , wherein the first local current spreading layer includes a lateral section that extends underneath the first blocking junction and a vertical section that extends upwardly from the lateral section along a sidewall of the first blocking junction, the vertical section comprising part of the channel.

3. The Schottky diode of claim 2 , wherein a width of the vertical section of the first local current spreading layer is between 0.1 and 0.75 microns.

4. The Schottky diode of claim 1 , wherein a distance between the first and second blocking junctions is between 1.5 microns and 5.0 microns.

5. The Schottky diode of claim 1 , wherein a doping concentration of at least a portion of the local current spreading layer exceeds a doping concentration of the first portion of the channel by at least a factor of five.

6. The Schottky diode of claim 1 , wherein a lateral width of the first blocking junction is approximately equal to a lateral width of the first current spreading layer.

7. The Schottky diode of claim 1 , wherein the drift region includes a superjunction structure having alternating vertically extending regions of silicon carbide having the respective first and second conductivity types.

8. The Schottky diode of claim 1 , wherein the drift region, the first and second blocking junctions and the first and second local current spreading layers comprise silicon carbide, and wherein a substrate is interposed between the lower portion of the drift region and the second contact.

9. A Schottky diode, comprising:
a drift region having an upper portion and a lower portion, at least some of the drift region doped with dopants having a first conductivity type;
a first blocking junction and a second blocking junction in the upper portion of the drift region, the first and second blocking junctions doped with dopants having a second conductivity type, the second conductivity type being opposite the first conductivity type;
a first contact on the upper portion of the drift region;
a second contact and separated from the first contact along a vertical axis; and
a channel doped with dopants having the first conductivity type in the upper portion of the drift region between the first and second blocking junctions, the channel having a non-uniform doping concentration along a lateral cross-section thereof.

10. The Schottky diode of claim 9 , further comprising a first local current spreading layer underneath the first blocking junction and a second local current spreading layer underneath the second blocking junction, the first and second local current spreading layers doped with dopants having the first conductivity type, the concentration of dopants in the first and second local current spreading layers being higher than the concentration of dopants in the drift region.

11. The Schottky diode of claim 10 , wherein a vertical section of the first local current spreading layer comprises a first side portion of the channel and a vertical section of second local current spreading layer comprises a second side portion of the channel that is opposite the first side of the channel, the vertical sections of the first and second local current spreading layers having a higher doping concentration than a middle section of the channel so that the channel has the non-uniform doping concentration along the lateral cross-section thereof.

12. The Schottky diode of claim 11 , wherein a width of the vertical section of the first local current spreading layer is between 0.1 and 0.75 microns.

13. The Schottky diode of claim 9 , wherein a distance between the first and second blocking junctions is at least 1.5 microns.

14. The Schottky diode of claim 10 , wherein a doping concentration of at least a portion of the local current spreading layer exceeds a doping concentration of a middle section of the channel by at least a factor of five.

15. The Schottky diode of claim 10 , wherein a lateral width of the first blocking junction is less than a lateral width of the first local current spreading layer.

16. The Schottky diode of claim 10 , wherein the drift region includes a superjunction structure having alternating vertically extending regions of silicon carbide having the respective first and second conductivity types.

17. The Schottky diode of claim 10 , wherein the drift region, the first and second blocking junctions and the first and second local current spreading layers comprise silicon carbide.

18. The Schottky diode of claim 1 , wherein first and second doping concentrations of the respective first and second local current spreading layers exceed a third doping concentration of the lower portion of the drift region and a fourth doping concentration of an upper portion of the drift region that is below the first and second local current spreading layers.

19. The Schottky diode of claim 9 , further comprising a substrate on the lower portion of the drift region, wherein the second contact is on the substrate opposite the drift region.

Assignees

• Cree Inc

Inventors

• Zhang Qingchun
• Suvorov Alexander

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10P30/22

  using masks · CPC title

• H01L29/0696

  Electricity · mapped topic

• H01L29/08

  Electricity · mapped topic