Gas quench for diffusion bonding

Patent metadata

Field	Value
Publication number	US-11905583-B2
Application number	US-202117343482-A
Country	US
Kind code	B2
Filing date	Jun 9, 2021
Priority date	Jun 9, 2021
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

First claim

The invention claimed is:

1. A method of cooling a semiconductor component substrate, the method comprising:
heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber for greater than or about 1 hour, wherein the semiconductor component substrate comprises aluminum;
delivering a gas into the chamber, wherein the gas is characterized by a temperature below or about 100° C.; and
cooling the semiconductor component substrate only to a temperature between about 100° C. and about 200° C. in a first time period of less than or about 1 minute, wherein, subsequent the cooling, the semiconductor component substrate is characterized by an ultimate tensile strength of greater than or about 320 MPa.

2. The method of cooling a semiconductor component substrate of claim 1 , wherein the semiconductor component substrate comprises aluminum 6061.

3. The method of cooling a semiconductor component substrate of claim 2 , wherein, subsequent the cooling, the semiconductor component substrate is characterized by a Vicker's hardness of greater than or about 100.

4. The method of cooling a semiconductor component substrate of claim 1 , further comprising:
maintaining the semiconductor component substrate at a temperature between about 150° C. and about 200° C. for a second time period of greater than or about 1 hours.

5. The method of cooling a semiconductor component substrate of claim 4 , further comprising:
subsequent to the second time period, air cooling the semiconductor component substrate.

6. The method of cooling a semiconductor component substrate of claim 1 , wherein the semiconductor component substrate comprises a diffusion bonded aluminum substrate.

7. The method of cooling a semiconductor component substrate of claim 6 , wherein the diffusion bonded aluminum substrate defines one or more internal channels accessible through aperture defined in the diffusion bonded aluminum substrate.

8. The method of cooling a semiconductor component substrate of claim 1 , wherein the gas comprises air, water vapor, nitrogen, or argon.

9. The method of cooling a semiconductor component substrate of claim 1 , wherein the chamber comprises a heater and a support for the semiconductor component substrate, and wherein a plurality of gas apertures are defined about the support.

10. The method of cooling a semiconductor component substrate of claim 1 , wherein the chamber is a diffusion bonding chamber.

11. The method of cooling a semiconductor component substrate of claim 1 , wherein the semiconductor component substrate is heated to greater than or about 540° C. in the chamber.

12. The method of cooling a semiconductor component substrate of claim 1 , wherein, subsequent the cooling, the semiconductor component substrate is characterized by an ultimate tensile strength of greater than or about 350 MPa.

13. A method of cooling a semiconductor component substrate, the method comprising:
heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a diffusion bonding chamber while applying a uniaxial force against the semiconductor component substrate, wherein the semiconductor component substrate comprises a first aluminum piece and a second aluminum piece;
delivering a gas into the diffusion bonding chamber, wherein the gas is characterized by a temperature below or about 100° C.; and
cooling the semiconductor component substrate to a temperature between about 100° C. and about 200° C. in a first time period of less than or about 1 minute.

14. The method of cooling a semiconductor component substrate of claim 13 , further comprising:
maintaining the semiconductor component substrate at a temperature between about 150° C. and about 200° C. for a second time period of greater than or about 1 hours.

15. The method of cooling a semiconductor component substrate of claim 14 , further comprising:
subsequent to the second time period, air cooling the semiconductor component substrate.

16. The method of cooling a semiconductor component substrate of claim 13 , wherein the diffusion bonding chamber comprises a heater, a support for the semiconductor component substrate, and a mechanical press, and wherein a plurality of gas apertures are defined about the support.

17. The method of cooling a semiconductor component substrate of claim 16 , wherein the diffusion bonding chamber comprises an exhaust system configured to maintain fluid flow through the diffusion bonding chamber while delivering a gas into the diffusion bonding chamber.

18. The method of cooling a semiconductor component substrate of claim 13 , wherein the first aluminum piece defines one or more channels, and wherein the second aluminum piece defines one or more apertures.

19. The method of cooling a semiconductor component substrate of claim 13 , wherein each of the first aluminum piece and the second aluminum piece comprise aluminum 6061.

20. A method of cooling a semiconductor component substrate, the method comprising:
heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber for greater than or about 1 hour, wherein the semiconductor component substrate comprises aluminum;
delivering a gas into the chamber, wherein the gas is characterized by a temperature below or about 100° C.;
cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute, wherein, subsequent the cooling, the semiconductor component substrate is characterized by an ultimate tensile strength of greater than or about 320 MPa; and
directly after cooling, maintaining the semiconductor component substrate at a temperature between about 150° C. and about 200° C. for a second time period of greater than or about 1 hours.

Assignees

• Applied Materials Inc

Inventors

• Behnke Joseph F
• Sommers Joseph Frederick
• Agarwal Sumit

Classifications

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• H10W70/027

  Mechanical treatments, e.g. deforming, punching or cutting · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0432

  mainly by conduction · CPC title