Method of forming perovskite thin film and light-emitting device including layer manufactured thereby

Patent metadata

Field	Value
Publication number	US-11895903-B2
Application number	US-202117506448-A
Country	US
Kind code	B2
Filing date	Oct 20, 2021
Priority date	Apr 8, 2021
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

First claim

What is claimed is:

1. A method of forming a perovskite thin film, the method comprising:
preparing a substrate;
spraying a first solution of a first perovskite compound precursor through an inner nozzle of a dual nozzle including the inner nozzle and an outer nozzle;
spraying a second solution of a second perovskite compound precursor through the outer nozzle;
forming a perovskite compound solution by reacting the first solution of the first perovskite compound precursor and the second solution of the second perovskite compound precursor;
forming a membrane on the substrate from the perovskite compound solution; and
evaporating a solvent of the perovskite compound solution from the membrane on the substrate.

2. The method of forming a perovskite thin film of claim 1 , wherein the perovskite compound is a non-lead-based perovskite compound.

3. The method of forming a perovskite thin film of claim 1 , wherein the spraying of the first solution of the first perovskite compound precursor and the spraying of the second solution of the second perovskite compound precursor are performed simultaneously.

4. The method of forming a perovskite thin film of claim 1 , wherein a voltage difference exists between the substrate and the dual nozzle by application of an electric field.

5. The method of forming a perovskite thin film of claim 4 , wherein the voltage difference is 50 keV or less.

6. The method of forming a perovskite thin film of claim 1 , wherein the first perovskite compound precursor is a first metal halogen compound, the second perovskite compound precursor is a second metal halogen compound, and
the first metal halogen compound and the second metal halogen compound are different metal halogen compounds.

7. The method of forming a perovskite thin film of claim 1 , wherein the first perovskite compound precursor is represented by Formula 1:
A α A′ α ′X  Formula 1

wherein, in Formula 1, A and A′ each independently represent an alkali metal, an alkaline earth metal, or a lanthanide metal,
X represents a halogen, and
α and α′ each independently represent a number from 0 to 1.

8. The method of forming a perovskite thin film of claim 1 , wherein the second perovskite compound precursor is represented by Formula 2:
B β B′ β ′X  Formula 2

wherein, in Formula 1, B and B′ each independently represent a transition metal or a post transition metal,
X represents a halogen, and
β and β′ each independently represent a number from 0 to 1.

9. The method of forming a perovskite thin film of claim 1 , wherein the perovskite compound is represented by Formula 3:
A α A′ α ′B β B′ β ′X γ   Formula 3

in Formula 3, A, A′, α, and α′ are as defined in Formula 1, B, B′, β, and β′ are as defined in Formula 2,
X represents a halogen, and
γ represents a number from 1 to 9.

10. The method of forming a perovskite thin film of claim 1 , wherein the first solution includes the first solvent, the second solution includes the second solvent, and the first solvent and the second solvent are organic solvents.

11. The method of forming a perovskite thin film of claim 10 , wherein the organic solvent has a boiling point of about 110° C. to about 200° C.

12. The method of forming a perovskite thin film of claim 10 , wherein the first solvent and the second solvent are identical organic solvents.

13. The method of forming a perovskite thin film of claim 10 , wherein the organic solvent is dimethylformamide (DMF), dimethyl sulfoxide (DMSO), o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, or any combination thereof.

14. The method of forming a perovskite thin film of claim 1 , wherein a temperature of the first solution is about 15° C. to about 200° C.

15. The method of forming a perovskite thin film of claim 1 , wherein a temperature of the second solution is about 15° C. to about 200° C.

16. The method of forming a perovskite thin film of claim 1 , wherein a concentration of the first solution is about 0.01 M to about 1.0 M.

17. The method of forming a perovskite thin film of claim 1 , wherein a concentration of the second solution is about 0.01 M to about 1.0 M.

18. The method of forming a perovskite thin film of claim 1 , wherein a temperature of the substrate is 200° C. or less.

Assignees

• Samsung Display Co Ltd

Inventors

• Ka Yoonseok
• Kim Dongchan
• Moon Jiyoung
• Yoon Heechang

Classifications

• H10K85/50 Primary

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K71/441

  in the presence of solvent vapors, e.g. solvent vapour annealing · CPC title

• H10K71/15 Primary

  characterised by the solvent used · CPC title

• C09K11/616 Primary

  with alkali or alkaline earth metals · CPC title

• H10K71/12 Primary

  using liquid deposition, e.g. spin coating · CPC title