Light-emitting device

Patent metadata

Field	Value
Publication number	US-9978974-B2
Application number	US-201715588134-A
Country	US
Kind code	B2
Filing date	May 5, 2017
Priority date	Aug 10, 2016
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A light-emitting device is provided. The light emitting device includes a first electrode, second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode. The emission layer includes at least one perovskite compound, a first quantum dot, and a second quantum dot. The first quantum dot and the second quantum dot may be different from each other.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode; and
an emission layer between the first electrode and the second electrode,
wherein the emission layer comprises at least one perovskite compound represented by Formula 1, a first quantum dot, and a second quantum dot, and
the first quantum dot and the second quantum dot are different from each other:
[A][B][X] 3   Formula 1

wherein, in Formula 1,
A is at least one monovalent organic cation, at least one monovalent inorganic cation, or any combination thereof,
B is at least one divalent inorganic cation, and
X is at least one monovalent anion.

2. The light-emitting device of claim 1 , wherein:
A is (R 1 R 2 R 3 R 4 N) + , (R 1 R 2 R 3 R 4 P) + , (R 1 R 2 R 3 R 4 As) + , (R 1 R 2 R 3 R 4 Sb) + , (R 1 R 2 N═C(R 3 )—NR 4 R 5 ) + , a monovalent cation of a substituted or unsubstituted nitrogen-containing 5-membered ring, a monovalent cation of a substituted or unsubstituted nitrogen-containing 6-membered ring, Li + , Na + , K + , Rb + , Cs + , Fr + , or any combination thereof, and
R 1 to R 5 , a substituent of the monovalent cation of the substituted nitrogen-containing 5-membered ring, and a substituent of the monovalent cation of the substituted nitrogen-containing 6-membered ring are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a substituted or unsubstituted C 1 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkenyl group, a substituted or unsubstituted C 2 -C 60 alkynyl group, a substituted or unsubstituted C 1 -C 60 alkoxy group, a substituted or unsubstituted C 6 -C 60 aryl group, and —N(Q 1 )(Q 2 )(Q 3 ), and
wherein Q 1 to Q 3 are each independently selected from hydrogen, deuterium, a hydroxyl group, a C 1 -C 60 alkyl group, a C 2 -C 60 alkenyl group, a C 2 -C 60 alkynyl group, a C 1 -C 60 alkoxy group, and a C 6 -C 60 aryl group.

3. The light-emitting device of claim 1 , wherein:
A is (R 1 R 2 R 3 R 4 N) + , (R 1 R 2 R 3 R 4 P) + , (R 1 R 2 R 3 R 4 As) + , (R 1 R 2 R 3 R 4 Sb) + , or any combination thereof, and
R 1 to R 4 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, and —N(Q 1 )(Q 2 )(Q 3 ), and
wherein Q 1 to Q 3 are each independently selected from hydrogen, deuterium, a hydroxyl group, a C 1 -C 20 alkyl group, and a C 1 -C 20 alkoxy group.

4. The light-emitting device of claim 1 , wherein:
A is (CH 3 NH 3 ) + , (C 2 H 6 PH 2 ) + , (CH 3 AsH 3 ) + , (NH 4 ) + , (CH 3 SbH 3 ) + , (PH 4 ) + , (PF 4 ) + , (CH 3 PH 3 ) + , (SbH 4 ) + , (AsH 4 ) + , (NCl 4 ) + , (NH 3 OH) + , (NH 3 NH 2 ) + , (CH(NH 2 ) 2 ) + , (C 3 N 2 H 5 ) + , ((CH 3 ) 2 NH 2 ) + , (NC 4 H 8 ) + , ((CH 3 CH 2 )NH 3 ) + , ((NH 2 ) 3 C) + , or any combination thereof.

5. The light-emitting device of claim 1 , wherein:
B is a divalent cation of a rare earth metal, a divalent cation of an alkali earth metal, or any combination thereof.

6. The light-emitting device of claim 1 , wherein:
B is La 2+ , Ce 2+ , Pr 2+ , Nd 2+ , Pm 2+ , Eu 2+ , Gd 2+ , Tb 2+ , Ho 2+ , Er 2+ , Tm 2+ , Yb 2+ , Lu 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Ra 2+ , Pb 2+ , Sn 2+ , or any combination thereof.

7. The light-emitting device of claim 1 , wherein:
B is Eu +2 .

8. The light-emitting device of claim 1 , wherein:
X is at least one halide anion.

9. The light-emitting device of claim 1 , wherein:
X is I − .

10. The light-emitting device of claim 1 , wherein:
the first quantum dot has a core-shell structure that comprises a core comprising a first semiconductor nanocrystal and a shell surrounding the core and comprising a second semiconductor nanocrystal, and
the second quantum dot has a core-shell structure that comprises a core comprising a third semiconductor nanocrystal and a shell surrounding the core and comprising a fourth semiconductor nanocrystal.

11. The light-emitting device of claim 10 , wherein:
the first semiconductor nanocrystal, the second semiconductor nanocrystal, the third semiconductor nanocrystal, and the fourth semiconductor nanocrystal each independently comprise a group II-VI element-containing compound semiconductor nanocrystal, a group III-V element-containing compound semiconductor nanocrystal, a group I-III-V element-containing compound semiconductor nanocrystal, a group I-II-III-V element-containing compound semiconductor nanocrystal, a group II-VI element-containing compound semiconductor nanocrystal doped with a rare earth element or a transition metal element, or any combination thereof.

12. The light-emitting device of claim 11 , wherein:
the group II-VI element-containing compound semiconductor nanocrystal comprises ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, HgZnS, HgZnSe, HgZnTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof,
the group III-V element-containing compound semiconductor nanocrystal comprises GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, InAlPAs, or any combination thereof,
the group I-III-V element-containing compound semiconductor nanocrystal comprises CuInS 2 , CuInSe 2 , or any combination thereof,
the group I-II-III-V element-containing compound semiconductor nanocrystal comprises ZnCuInS, and
the group II-VI element-containing compound semiconductor nanocrystal doped with the rare earth element or the transition metal element comprises Mn-doped ZnSe (Mn:ZnSe), Cu-doped ZnSe (Mn:ZnSe), Mn-doped ZnTe (Cu:ZnTe), Cu-doped ZnTe (Cu:ZnTe), or any combination thereof.

13. The light-emitting device of claim 10 , wherein:
the first semiconductor nanocrystal comprises InP having a grain size of greater than about 4 nm and less than or equal to about 15 nm, CuInS 2 having a Cu-to-In atomic ratio of about 2:5 to about 8:5, ZnCuInS having a grain size of about 5 nm to about 10 nm, Mn-doped ZnSe (Mn:ZnSe)/ZnS, Mn-doped ZnTe (Mn:ZnTe), or any combination thereof,
the third semiconductor nanocrystal comprises InP having a grain size of about 2 nm to about 4 nm, CuInS 2 having a Cu-to-In atomic ratio of about 0.5:5 to about 2:5, ZnCuInS having a grain size of about 2 nm to about 5 nm, Cu-doped ZnSe (Cu:ZnSe), Cu-doped ZnTe (Cu:ZnTe), or any combination thereof, and
the second semiconductor nanocrystal and the fourth semiconductor nanocrystal each independently comprise ZnS.

14. The light-emitting device of claim 1 , further comprising:
a hole transport region between the first electrode and the emission layer and an electron transport region between the emission layer and the second electrode,
wherein at least one selected from the hole transport region and the electron transport region independently comprises a metal halide, a metal oxide, a metal chalcogenide, a metal selenide, or any combination thereof.

15. The light-emitting device of claim 1 , further comprising:
a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode,
wherein at least one selected from the hole transport region and the electron transport region independently comprises a group IV element-containing compound semiconductor, a group III-V element-containing compound semiconductor, a group II-VI element-containing compound semiconductor, a group I-VII element-containing compound semiconductor, a group IV-VI element-containing co

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Yisu
• Kim Dongchan
• Lee Byoungduk
• Cho Yoonhyeung

Classifications

• C09K2211/10

  Non-macromolecular compounds · CPC title

• C09K11/06

  containing organic luminescent materials · CPC title

• C09K2211/182

  of the rare earth metals, i.e. Sc, Y or lanthanide · CPC title

• H01L51/0077

  Electricity · mapped topic

• C07C211/63

  having quaternised nitrogen atoms bound to acyclic carbon atoms · CPC title