Method of forming a multilayer substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface

Patent metadata

Field	Value
Publication number	US-11891691-B2
Application number	US-202217655475-A
Country	US
Kind code	B2
Filing date	Mar 18, 2022
Priority date	Mar 8, 2016
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)≤100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.

First claim

The invention claimed is:

1. A multilayer substrate comprising:
a silicon substrate comprising an optically finished surface with a surface roughness (Ra) of less than 100 nm; and
a diamond layer on the optically finished surface, the diamond layer having a 1.06 micron light scattering coefficient, at a distance of 34 cm from a blocking lens, of less than or equal to 7/cm.

2. The multilayer substrate of claim 1 , wherein the diamond layer has a 1.06 micron light scattering coefficient, at a distance of 34 cm from a blocking lens, of less than or equal to 5/cm.

3. The multilayer substrate of claim 1 , wherein the diamond layer has a diamond nucleation density of greater than or equal to 1.0×10 5 /cm 2 .

4. The multilayer substrate of claim 1 , wherein the diamond layer has a diamond nucleation density of greater than or equal to 1.0×10 9 /cm 2 .

5. The multilayer substrate of claim 1 , wherein the silicon substrate comprises a dielectric film.

6. The multilayer substrate of claim 1 , further comprising one or more light management coatings located on an exposed surface of multilayer substrate.

7. The multilayer substrate of claim 6 , wherein the exposed surface is a surface of the diamond layer located opposite the silicon substrate.

8. The multilayer substrate of claim 1 , wherein a surface of the silicon substrate opposite the diamond layer is bonded to another substrate.

9. The multilayer substrate of claim 8 , wherein the other substrate is made of one of silicon, graphite, metal, ceramic or glass.

10. The multilayer substrate of claim 1 , wherein the silicon substrate comprises an n-type dopant or a p-type dopant.

11. The multilayer substrate of claim 1 , wherein the diamond layer comprises an n-type dopant or a p-type dopant.

12. The multilayer substrate of claim 1 formed by a method comprising:
(a) providing the silicon substrate;
(b) seeding the optically finished surface of the silicon substrate with diamond particles to form a diamond seeded optically finished surface;
(c) growing the diamond layer on the diamond seeded optically finished surface using a first chemical vapor deposition;
(d) stopping the growing of the diamond layer;
(e) seeding the diamond layer with nanodiamond particles; and
(f) growing the diamond layer on the nanodiamond particles using a second chemical vapor deposition.

13. The multilayer substrate of claim 12 , wherein the method further comprises (g) polishing a surface of the diamond layer opposite the silicon substrate to an optical finish.

14. The multilayer substrate of claim 12 , wherein at least one of the first chemical vapor deposition or the second chemical vapor deposition is performed using a microwave plasma growth system.

15. The multilayer substrate of claim 12 , wherein the diamond particles that seed the optically finished surface of the silicon substrate are suspended in a liquid medium in a diamond slurry.

16. A multilayer substrate comprising:
a first substrate;
a second substrate bonded to the first substrate, the second substrate is made at least of silicon, the second substrate comprising an optically finished surface opposite the first substrate, the optically finished surface having a surface roughness (Ra) of less than 100 nm; and
a diamond layer on the optically finished surface of the second substrate.

17. The multilayer substrate of claim 16 , wherein the first substrate is made of silicon, graphite, metal, ceramic or glass.

18. The multilayer substrate of claim 16 , wherein:
the second substrate is bonded to the first substrate by a bonding agent, and
the bonding agent comprises at least one of a polymer, a silicate, or a metal.

19. A multilayer substrate comprising:
a silicon substrate comprising an optically finished surface with a surface roughness (Ra) of less than 100 nm; and
a diamond layer on the optically finished surface, wherein
at least one of the silicon substrate and the diamond layer comprises an n-type dopant or a p-type dopant.

Assignees

• Ii Vi Delaware Inc

Inventors

• Xu Wen-Qing
• Liu Chao
• Barbarossa Giovanni
• Anderson Thomas E
• Eissler Elgin E

Classifications

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• C23C16/27 Primary

  Diamond only · CPC title

• C23C16/01 Primary

  on temporary substrates, e.g. substrates subsequently removed by etching · CPC title