Selective etching process for SiGe and doped epitaxial silicon
US-12062571-B2 · Aug 13, 2024 · US
Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates
US9159641B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9159641-B2 |
| Application number | US-201414211247-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2014 |
| Priority date | Mar 15, 2013 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
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Abstract
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An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A process for making a nanocrystalline diamond-impregnated silicon substrate, comprising: etching a plurality of tapered through-silicon vias in a sample of silicon; seeding at least some of the through-silicon vias with nanodiamond particles; and growing a nanocrystalline diamond (NCD) coating from the seed nanodiamond particles to form a plurality of NCD-coated through-silicon vias having a predetermined pattern in the substrate.…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9159641B2 cover?
- An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is gro…
- Who is the assignee on this patent?
- Hobart Karl D, Tadjer Marko J, Feygelson Tatyana I, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10W40/254. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).