Electron emitting element and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-11887802-B2
Application number	US-202117912659-A
Country	US
Kind code	B2
Filing date	Mar 16, 2021
Priority date	Mar 23, 2020
Publication date	Jan 30, 2024
Grant date	Jan 30, 2024

Abstract

Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1 , an electron accelerating layer 6 made of an insulation film, a second electrode 3 , and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.

First claim

The invention claimed is:

1. An electron emitting element comprising:
a laminated structure in which a first electrode, an electron accelerating layer made of an insulation film, a second electrode, and a cover film are laminated in that order, wherein
the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and
the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface thereof,
wherein the cover film is made of hexagonal boron nitride.

2. The electron emitting element according to claim 1 , wherein the cover film is a film inert to oxygen or a film having higher corrosion resistance than the second electrode.

3. The electron emitting element according to claim 1 , wherein a film thickness of the cover film is configured so that a reduction rate of an electron emission efficiency due to the cover film is 90% or less compared to a case without the cover film.

4. The electron emitting element according to claim 1 , wherein the cover film is made of hexagonal boron nitride of 1 or more layers and 39 or less layers.

5. The electron emitting element according to claim 1 , wherein the second electrode is a graphene film or a graphite film.

6. The electron emitting element according to claim 5 , wherein the graphene film is a polycrystalline graphene film which consists of one carbon layer, and the graphite film is a polycrystalline graphite film which consists of 20 or less carbon layers.

7. The electron emitting element according to claim 5 , wherein the graphene film and the graphite film are doped with nitrogen.

8. The electron emitting element according to claim 1 , wherein the electron accelerating layer is made of hexagonal boron nitride.

9. The electron emitting element according to claim 1 , wherein the second electrode is a metal electrode.

10. An electron emitting element comprising:
a laminated structure in which a first electrode, an electron accelerating layer made of an insulation film, a second electrode, and a cover film are laminated in that order, wherein
the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and
the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface thereof, wherein the cover film is (i) a film of one or two or more layers selected from MoS 2 , MoSe 2 , WS 2 , WSe 2 , GaS, and GaSe, or (ii) a film of one or two more layers selected from SiO 2 , Al 2 O 3 , ZrO, HfO 2 , and TiO 2 .

11. The electron emitting element according to claim 10 , wherein the second electrode is a graphene film or a graphite film.

12. The electron emitting element according to claim 11 , wherein the graphene film is a polycrystalline graphene film which consists of one carbon layer, and the graphite film is a polycrystalline graphite film which consists of 20 or less carbon layers.

13. The electron emitting element according to claim 11 , wherein the graphene film and the graphite film are doped with nitrogen.

14. The electron emitting element according to claim 10 , wherein the second electrode is a metal electrode.

15. A manufacturing method for an electron emitting element comprising:
a step of forming a first electrode;
a step of forming a first insulation film, which limits a region of an electron emission surface, on a part of a surface of the first electrode;
a step of forming an electron accelerating layer which is made of an insulation film and covers the first electrode and the first insulation film; and
a step of forming a cover film, which transmits electrons, on a region of the electron emission surface of the electron accelerating layer,
wherein the cover film is a hexagonal boron nitride film, and
the hexagonal boron nitride film which covers the electron accelerating layer is formed in the step of forming the cover film by (i) transferring a hexagonal boron nitride film which is formed on a substrate on the region of the electron emission surface of the electron accelerating layer, or (ii) performing a chemical vapor deposition method using diborane and ammonia, boron trichloride and ammonia, ammonia borane, or borazine as raw materials.

Assignees

• Aist

Inventors

• Murakami Katsuhisa
• Nagao Masayoshi

Classifications

• H01J1/312 Primary

  having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type {(H01J1/304- H01J1/308 take precedence)} · CPC title

• C23C16/342

  Boron nitride · CPC title

• H01J1/90

  Insulation between electrodes or supports within the vacuum space · CPC title

• H01J9/027

  of thin film cathodes · CPC title

• H01J2209/012

  Coating · CPC title